Murata Manufacturing Co., Ltd.

Mitsunori Samata

Satoshi Goto

Yuji Takematsu

Takanori Uejima

Yutaka Sasaki

Motoji Tsuda

Shunji Yoshimi

Yoshiaki Sukemori

Satoshi Arayashiki

Naoya Matsumoto

Tetsuro Harada

Masayuki Aoike

Dai Nakagawa

Shigeru Tsuchida

Katsunari Nakazawa

Masahide Takebe

Satoshi Tanaka

Yukiya Yamaguchi

Hisanori Namie

Daerok Oh

Yoshiki Yasutomo

Takahiro Katamata

Yuki Fukuda

Masatoshi Hase

Kenichi Shimamoto

Atsushi Ono

Kenji Tahara

Koshi Himeda

Mikiko Fukasawa

Yuuki Fukuda

Masaki Tada

An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that includes an electric circuit, a second base that has at least a part formed of a second semiconductor material having a thermal conductivity lower than the first semiconductor material and that includes a power amplifier circuit, and a high thermal conductive member that has at least a part formed of a high thermal conductive material having a thermal conductivity higher than the first semiconductor material and that is disposed between the electric circuit and the power amplifier circuit. At least a part of the high thermal conductive member overlaps at least a part of the first base and at least a part of the second base in plan view. The high thermal conductive member is in contact with the first base and the second base.

Integrated circuit and radio-frequency module

A power amplification device includes a first member in which a first circuit is formed, a second member in which a second circuit is formed, and a member-member connection conductor that electrically connects the first circuit and the second circuit to each other. The second member is mounted on the first member. The second circuit includes a first amplifier, which amplifies a radio frequency signal to output a first amplified signal. The first circuit includes a control circuit that controls an operation of the second circuit. At least part of a first termination circuit, which is connected to the first amplifier through the member-member connection conductor and which attenuates a harmonic wave component of the first amplified signal, is formed in the first member.

Power amplification device and an RF circuit module

A radio-frequency module includes a first base made of a first semiconductor material; a second base that is made of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material and which includes a power amplifier circuit; a third base including a transmission filter circuit; and a module substrate having a main surface on which the first base, the second base, and the third base are arranged. The first base is joined to the main surface via an electrode. The second base is arranged between the module substrate and the first base in a sectional view and is joined to the main surface via an electrode. At least part of the first base is overlapped with at least part of the second base and at least part of the third base in a plan view.

Radio-frequency module and communication apparatus

A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.

Semiconductor device

A power amplifier unit includes a power amplifier circuit that amplifies a radio-frequency input signal, a first impedance matching circuit that performs impedance matching for an output signal of the power amplifier circuit, a second-order harmonic termination circuit on an output side of the first impedance matching circuit and that reflects at least part of even-ordered and odd-ordered harmonics contained in a signal input from the first impedance matching circuit to output the at least part of the harmonics from an input terminal as a radio-frequency signal and outputs a radio-frequency signal containing a fundamental and the remainder of the harmonics from an output terminal, and a filter that is on a subsequent stage of the second-order harmonic termination circuit, that attenuates at least part of the even-ordered and odd-ordered harmonics, and that outputs a radio-frequency signal including the fundamental and the remainder of the even-ordered and odd-ordered harmonics.

Power amplifier unit

A power amplifier circuit includes a first amplifier that amplifies a first signal, and a second amplifier arranged subsequent to the first amplifier. The second amplifier amplifies a second signal that is based on an output signal of the first amplifier. The first amplifier performs class inverse-F operation, and the second amplifier performs class F operation.

Power amplifier circuit

A semiconductor device including a radio-frequency amplifier circuit and a band selection switch are mounted on or in a module substrate. An output matching circuit includes at least one passive element disposed on or in the module substrate. The output matching circuit is coupled between the radio-frequency amplifier circuit and the band selection switch. The semiconductor device includes a first member having a semiconductor portion made of an elemental semiconductor and a second member joined to the first member in surface contact with the first member. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. The semiconductor device is disposed in close proximity to the output matching circuit in plan view. The output matching circuit is disposed in close proximity to the band selection switch.

Radio-frequency module

A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.

Radio frequency module and communication device

A power amplifier circuit includes a first transistor having a first terminal to which a voltage corresponding to a variable power supply voltage is to be supplied and a second terminal to which a radio-frequency signal is to be supplied, the first transistor being configured to amplify the radio-frequency signal, a bias circuit configured to supply a bias current or voltage to the second terminal of the first transistor, and an adjustment circuit configured to adjust the bias current or voltage in accordance with the variable power supply voltage supplied from a power supply terminal.

A power amplifier module includes a first transistor that amplifies and outputs a signal, a second transistor that supplies a bias current to a base of the first transistor, and a ballast resistor circuit that is disposed between the base and an emitter of the second transistor and that includes first and second resistive elements and a switching element. The first resistive element is arranged in series on a line connecting the base and the emitter. The first and second resistive elements are series-connected or parallel-connected. When the second resistive element is series-connected to the first transistor, the switching element is parallel-connected to the second resistive element. When the second resistive element is parallel-connected to the first transistor, the switching element is series-connected to the second resistive element. The switching element is switched on/off based on a collector current of the second transistor.

Power amplifier module

A power amplifier circuit includes a transistor having a base to which a radio frequency signal is input and a collector to which a power supply voltage that varies in accordance with an envelope of amplitude of the radio frequency signal is supplied and from which an amplified signal obtained by amplifying the radio frequency signal is output; a first termination circuit provided at a stage subsequent to the transistor and configured to attenuate a harmonic component of the amplified signal; and a second termination circuit provided at the stage subsequent to the transistor and configured to attenuate a harmonic component of the amplified signal. The first termination circuit and the second termination circuit have a property of resonating for a radio frequency signal having a frequency between a frequency of a second harmonic component and a frequency of a third harmonic component.

A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.

High frequency module and communication device

A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.

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Kyoto, Japan

Mitsunori Samata