Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Other

Mitsunori Sakama

Shunpei Yamazaki

Takeshi Fukada

Toshimitsu Konuma

Akira Mase

Satoshi Teramoto

Toshiji Hamatani

Takashi Inushima

Hisashi Abe

Masahiko Hayakawa

Takashi Inujima

Minoru Miyazaki

Toshiharu Yamaguchi

Naoya Sakamoto

Nobumitsu Amachi

Hiroshi Uehara

Satoshi Toriumi

Noriko Ishimaru

Toru Takayama

Hisashi Ohtani

Masaaki Hiroki

Hiroyuki Shimada

Kaoru Koyanagi

Mika Ishiwata

Yasuhiko Takemura

Taketomi Asami

Yukiko Uehara

Shigenori Hayashi

Mitsufumi Codama

Toshiya Kurokawa

Satoshi Ota

Katsumi Maekawa

Joichi Daiba

Masahiko Miwa

Hideki Uochi

Hisato Shinohara

Ippei Kobayashi

Ichiro Takayama

Noriya Ishida

Tomohiko Sato

Takao Hiramoto

Mari Sasaki

Mamoru Tashiro

Takashi Inuzima

Mitinori Iwai

Shigefumi Sakai

Mitsuhiro Ichijo

Yoshihisa Takayama

Tadashi Ozue

Atsuhiro Kumagai

Naoki Hirose

Yasuaki Kano

Masanori Abe

Kazuya Koseki

Junichi Takeyama

Shinji Imatou

Mitsunori Tsuchiya

Kazuhisa Nakashita

Kazuyuki Hirooka

Atsushi Kawano

Shinji Imato

Masahiko Noro

Takeshi Fukuda

Takashi Fuki

Masahiro Kiyota

Michinori Iwai

An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

Semiconductor device and method for manufacturing the same

A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

Method of manufacturing a semiconductor device

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamberwith a power source, a vacuum exhausting means, and a reaction gas introduction pipe, plasmais generated in a space surrounded by an electrode, a substrate holder, and an insulator

Plasma CVD apparatus

Substrate processing apparatus and a manufacturing method of a thin film semiconductor device

In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CH, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical

A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

Insulating film and method of producing semiconductor device

Manufacturing method of a thin film semiconductor device

In a process of forming a silicon oxide filmthat constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

Plasma CVD method

Growing community of inventors

Kanagawa, Japan

Mitsunori Sakama