Hamamatsu-photonics K.k.

Mitsunori Nishizawa

Tomonori Nakamura

Nobuyuki Hirai

Akihiro Otaka

Musubu Koishi

Akira Takahashi

Akira Takeshima

Takashi Ito

Akihito Uchikado

Ken Kitazawa

An inspection apparatus includes a light source that emits light, an optical amplifier that amplifies input light and outputs the amplified light, an optical system (an objective lens, an imaging optical system, and a scanning optical system) that irradiates a semiconductor device with the light from the light source and guides light from the semiconductor device to the optical amplifier, and a photodetector that detects the light output from the optical amplifier, and the optical amplifier amplifies the input light so that saturation does not occur.

Inspection device for a semiconductor device

A time measurement device for calculating a time from an input of a first trigger signal to an input of a second trigger signal as a measured time includes a start gate configured to generate a start signal, a stop gate configured to generate a stop signal, a TDC circuit configured to generate a digital code corresponding to the time from an input of a start signal to an input of a stop signal, a delay circuit configured to delay an input of at least one of the start signal and the stop signal to the TDC circuit by a predetermined delay time, and a control unit configured to calculate a measured time on the basis of a plurality of digital codes generated by the TDC circuit, wherein the time delay unit selects at least two delay times.

Time measurement device, time measurement method, light-emission-lifetime measurement device, and light-emission-lifetime measurement method

A light source device includes a light source that generates incoherent light, and an optical amplifier having gain characteristics indicating a gain at each wavelength, which receives the incoherent light output by the light source as input light, and outputs amplified light obtained by amplifying the input light, and a central wavelength of an intensity distribution indicating an intensity at each wavelength of the input light is a wavelength longer than a central wavelength of the gain characteristics indicating a gain at each wavelength of the optical amplifier.

Light source device and inspection device

A semiconductor device inspection system includes a laser beam source, a tester, an optical sensor, a first spectrum analyzer for measuring first phase information serving as phase information of the detection signal, a reference signal generating unit for generating a reference signal of a predetermined frequency, a second spectrum analyzer for measuring second phase information serving as phase information of a reference signal, and an analysis unit for deriving phase information of the detection signal at the predetermined frequency, wherein the first spectrum analyzer measures the first phase information with respect to the reference frequency, the second spectrum analyzer measures the second phase information with respect to the reference frequency, and the frequency of the base signal of the first spectrum analyzer and the phase thereof are synchronized with the frequency of the base signal of the second spectrum analyzer and the phase thereof.

Semiconductor device inspection device and semiconductor device inspection method

An image generation apparatus is an image generation apparatus that generates an image based on measurement light from the semiconductor device, and the image generation apparatus includes an optical sensor that detects the measurement light, an optical sensor power supply that applies a constant voltage to the optical sensor to supply a current to the optical sensor, a current detector that generates a pattern signal according to magnitude of the current supplied to the optical sensor by the optical sensor power supply, and a control device that generates a pattern image based on the pattern signal.

Image generation apparatus and image generation method

A semiconductor device inspection system includes a laser light source for generating light to be irradiated a semiconductor device, an optical sensor for detecting the light reflected by the semiconductor device and outputting the detection signal, a tester unit for applying a operating signal to the semiconductor device, an electricity measurement unit to which the detection signal is input, an electricity measurement unit to which the detection signal and the operating signal are selectively input, and a switching unit having a detection signal terminal and a operating signal terminal. The switching unit inputs the detection signal to the electricity measurement unit by connecting a connection section to the detection signal terminal and inputs the operating signal by connecting the connection section to the operating signal terminal.

A semiconductor device testing apparatusA includes a tester unitthat generates an operational pulse signal, an optical sensorthat outputs a detection signal as a response to the operational pulse signal, a pulse generatorthat generates a reference signal containing a plurality of harmonics for the operational pulse signal in synchronization with the operational pulse signal, a spectrum analyzerthat receives the detection signal and acquires a phase and amplitude of the detection signal at a detection frequency, a spectrum analyzerthat receives the reference signal and acquires a phase of the reference signal at a detection frequency, and an analysis control unitthat acquires a time waveform of the detection signal based on the phase and the amplitude of the detection signal acquired by the spectrum analyzerand the phase of the reference signal acquired by the spectrum analyzer

Apparatus for frequency analyzing a measurement target and method of frequency analyzing a measurement target

A semiconductor device measurement apparatusA includes a testerthat generates an operational pulse signal to be input to a semiconductor devicea light sourcethat generates light, a light branch optical systemthat irradiates the semiconductor device with the light, a light detectorthat detects reflected light obtained by the semiconductor devicereflecting the light, and outputs a detection signal, an analog signal amplifierthat amplifies the detection signal and outputs an amplified signal, and an analysis apparatusthat analyzes an operation of the semiconductor devicebased on the amplified signal and a predetermined correction value, wherein the predetermined correction value is obtained based on a signal obtained by the analog signal amplifieramplifying a signal corresponding to a harmonic of a fundamental frequency of the operational pulse signal.

Apparatus for testing a semiconductor device and method of testing a semiconductor device

A time-resolved measurement apparatus () reads a detection timing pulse from an MCP () in a front-side MCP stack () in a photomultiplier tube (). A detection timing of a photon is determined based on this pulse. A principal component of this pulse is a potential rise pulse in response to the emission of photoelectrons from the MCP (), and it has the positive polarity. On the other hand, when photoelectrons are incident on the front-side stack (), a pulse of the negative polarity is generated to deform the waveform of the detection timing pulse. However, since the number of the photoelectrons incident on the front-side stack () is fewer than that of those incident on a rear-side stack (), the negative component is small in the detection timing pulse. This results in enhancing the time precision of the time-resolved measurement.

Time-resolved measurement apparatus and position-sensitive election multiplier tube

A time-resolved measurement apparatus () acquires a detection timing pulse from an output terminal () attached to a micro channel plate () in a photomultiplier tube (). A position-time measuring circuit () generates a signal indicating the time difference between a reference time pulse synchronized with excitation of a sample () and the detection timing pulse, and feeds the signal to a data processor (). The data processor stores this time difference as a detection time of light emission. The data processor corrects the detection time according to the distance between the position at which the detection timing pulse is generated on the micro channel plate and the output terminal. This enhances the precision of time-resolved measurement.

Time-resolved measurement apparatus

The optical trigger 22 outputs a trigger signal in. synchronization with a pulse beam falling incident on the photocathode 91 of the streak tube 90. The deflection voltage generator 50 applies a pair of deflection voltages to the deflection electrodes 93 and 93' in the streak tube 90. The differential amplifier 60 detects the deflection voltages, and outputs a deflection voltage detection signal. The delay comparator 71 detects a time difference between the deflection voltage detection signal and the trigger signal, and outputs a difference signal indicative of the detected time difference. Based on the difference signal, the voltage control delay circuit 41 controls a delay amount of the deflection voltages to be outputted from the generator 50.

Optical waveform detecting device

A photoconductive photodetector to which a modulation voltage signal having a predetermined frequency is applied receives a signal to be measured (I.sub.I) while adjusting the phase of a modulation signal by a phase shifter. A current-to-voltage conversion unit extracts a DC component of a current signal generated at the photoconductive photodetector in correspondence with the intensity of a predetermined frequency component of the signal to be measured (I.sub.I) as a voltage signal. The maximum value of DC voltage values (V.sub.O) obtained in every setting operation of a phase adjustment value is identified. The maximum value corresponds a case in which the modulation voltage signal and the predetermined frequency component of the signal to be measured (I.sub.I) are in phase. The intensity of the predetermined frequency component of the signal to be measured (I.sub.I) is calculated. As a result, a high-speed phenomenon can be measured with a high precision.

Synchronous signal detection apparatus with a photoconductive

There is disclosed a method for driving a photoelectric device comprising a photocathode, and controller for controlling electrons emitted from the photocathode, wherein gate voltages are applied respectively to the photocathode and the controller so that the electrons from the photocathode are not outputted from the controller.

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Hamamatsu, Japan

Mitsunori Nishizawa