Sony Corporation

Mitsunori Nakamoto

Shintarou Hirata

Iwao Yagi

Masaki Murata

Hideaki Mogi

Yuichi Tokita

Masashi Bando

Yasuharu Ujiie

Hajime Kobayashi

Toshiyuki Kunikiyo

Shinnosuke Hattori

Raku Shirasawa

Shuichiro Yasuda

An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1). 

Photoelectric conversion element, image pickup element, laminated image pickup element, and solid-state image pickup device

Photoelectric conversion element, image pickup element, laminated image pickup element, and solid-state image pickup device using an organic material having desired optical absorption properties

There are provided a memory element and a memory device in which the state of erasing remains stable by deactivation of a localized site(s) formed inside of a resistance change layer. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer including an n-type dopant or a p-type dopant, and disposed on the first electrode side, and an ion source layer disposed between the resistance change layer and the second electrode.

Memory element and memory device

There are provided a memory element and a memory device with a smaller range of element-to-element variation of electrical characteristics. The memory element includes a first electrode, a memory layer, and a second layer in this order. The memory layer includes a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and an ion source layer disposed between the resistance change layer and the second electrode.

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Kanagawa, Japan

Mitsunori Nakamoto