Tokyo Electron Limited

Tokyo Electron Limi Ted

Mitsunori Nakamori

Takehiko Orii

Noritaka Uchida

Tadashi Iino

Yusuke Saito

Koji Yamashita

Takayuki Toshima

Satoru Tanaka

Teruomi Minami

Jun Nonaka

Yosuke Kawabuchi

Takanori Miyazaki

Keisuke Egashira

Takuro Masuzumi

Junichi Kitano

Norihiro Ito

Hiroki Ohno

Hiroshi Yano

Koji Tanaka

Hiroaki Inadomi

Masami Yamashita

Kazuyuki Mitsuoka

Hisashi Kawano

Hiroshi Marumoto

Koukichi Hiroshiro

Hiroki Taniyama

Hiromi Kiyose

Kouzou Tachibana

Yoshiteru Fukuda

Hirotaka Maruyama

Akira Ishihara

Akira Fujita

Takayuki Niuya

Kazuya Koyama

Hiroyuki Mori

Nobuhiko Mouri

Kotaro Ooishi

Rintaro Higuchi

Yoshichika Tokuno

Yuji Murakami

Shozou Maeda

Tsunemoto Ogata

Yu Tsurifune

A substrate processing apparatus includes a liquid processing tank, and a hydrophobizing gas supply unit. The liquid processing tank stores a processing liquid and dips a plurality of substrates in the processing liquid to liquid-process the plurality of substrates. The hydrophobizing gas supply unit supplies a gas of a hydrophobizing agent to the plurality of substrates after liquid processing thereof.

Substrate processing apparatus and substrate processing method

A substrate processing method for removing liquid on a substrate having an uneven pattern formed on a surface of the substrate and drying the substrate. The substrate processing method includes: forming a laminate having a two-layer structure including a first material in a solid state forming a lower layer and a second material in a solid state forming an upper layer, in a concave portion of the pattern; removing the second material from the concave portion by performing at least one of a heating process, a light-emitting process, and a reaction process using gas with respect to the second material to sublimate, decompose, and gas-react the second material; and removing the first material from the concave portion by performing at least one of the heating process, the light-emitting process, and the reaction process using gas with respect to the first material to sublimate, decompose, and gas-react the first material.

Substrate processing method and substrate processing apparatus

A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

Substrate processing apparatus and method of processing substrate

Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

Liquid processing method, substrate processing apparatus, and storage medium

A liquid processing method can remove pure water existing within a pattern of a substrate and replace the pure water with a solvent rapidly. The liquid processing method of supplying the pure water onto the substrate, which is horizontally held and has the pattern formed on a surface thereof, and drying the substrate includes a pure water supplying process of supplying the pure water onto the surface of the substrate; a heated solvent supplying process of supplying, after the pure water supplying process, the solvent in a liquid state, which is heated to a temperature equal to or higher than a boiling point of water, onto the surface of the substrate on which the pure water exists; and a removing process of drying the substrate by removing the solvent form the surface of the substrate.

Liquid processing method, substrate processing apparatus and recording medium

Disclosed is a substrate processing method including a first surface cleaning step of supplying a first cleaning liquid containing water to a first surface of a substrate; a second surface cleaning step of supplying a second cleaning liquid containing water to a second surface that is opposite to the first surface; a water removal step of removing the water remaining on the second surface of the substrate in a state where the first surface is not exposed to outside air, after the second surface cleaning step; a water-repellency step of supplying a water-repellent agent to the first surface of the substrate after the water removal step; and a drying step of drying the substrate after the water-repellency step.

Disclosed is a substrate liquid processing apparatus. The apparatus includes: a pure water supply unit (a rinse liquid supply unit) configured to supply pure water to a substrate; and a drying liquid supply unit configured to supply a drying liquid having a higher volatility than the pure water to the substrate. The substrate liquid processing apparatus is used to supply the drying liquid having the higher volatility, of which a part contains a silicon-based organic compound, to the substrate, from the drying liquid supply unit.

Substrate liquid processing apparatus, substrate liquid processing method, and computer-readable storage medium storing substrate liquid processing program

A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.

Substrate processing method and substrate processing system

Provided are a rear substrate surface polishing device polishing a rear surface of a substrate, a rear substrate surface polishing system including the rear substrate surface polishing device, a rear substrate surface polishing method used in the rear substrate surface polishing device, and a storage medium for storing a program implemented with the rear substrate surface polishing method. In particular, the rear surface of the substrate is polished by a substrate polishing unit in accordance with information acquired from a prior process performed prior to the polishing process of the rear surface of the substrate at the substrate polishing unit. Further, the substrate polishing unit polishes the substrate with a polishing area determined on the basis of information acquired from a prior process. Furthermore, the polishing is performed by using any one or all of a plurality of substrate polishing units determined on the basis of information acquired from a prior process.

Apparatus for polishing rear surface of substrate, system for polishing rear surface of substrate, method for polishing rear surface of substrate and recording medium having program for polishing rear surface of substrate

An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

A liquid processing apparatus processes an object to be processed W including a body part Wand a plurality of projecting-shape parts Wdisposed on the body part W, with an inorganic film and a different film being laminated to each other. The liquid processing apparatus comprises: a support partconfigured to support the body part W; a hydrophobic-liquid supply mechanismconfigured to supply a hydrophobic liquid to the object to be processed W; and a rinse-liquid supply partconfigured to supply a rinse liquid to the object to be processed W to which the hydrophobic liquid has been supplied. The hydrophobic-liquid supply mechanismincludes: a first hydrophobic-liquid supply partconfigured to supply a first hydrophobic liquid for making hydrophobic the inorganic film; and a second hydrophobic-liquid supply partconfigured to supply a second hydrophobic liquid for making hydrophobic the different film.

Liquid processing apparatus, liquid processing method, and storage medium

At first, with a chamber being filled with a first gas, a process liquid is supplied onto a surface of a wafer in the chamber so as to process the surface of the wafer. At this time, the process liquid discharged from the chamber is returned to a process-liquid supplying part. Thereafter, with the chamber being filled with a second gas whose humidity is lower than that of the first gas, a fluid for forming a liquid film is supplied onto the surface of the wafer in the chamber to form a liquid film on the surface of the wafer and to dry the surface of the wafer.

Substrate processing method, substrate processing apparatus, and storage medium

A liquid processing method includes: placing a plate adjacently to at least one of surfaces of a target substrate, and supplying a process liquid into a gap between the plate and the target substrate, thereby forming a liquid film of the process liquid; subjecting the target substrate to a process using a state with the liquid film of the process liquid thus formed; and supplying a gas to the liquid film, thereby breaking the liquid film, after finishing the process.

Liquid processing method and liquid processing apparatus

Water vapor is mixed to Ogas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the Ogas dissolve into condensed water. Subsequently, a gas-liquid separator separates the Ogas from the condensed water. Water vapor is mixed with the Ogas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

Ozone processing apparatus and ozone processing method

A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.

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Nirasaki, Japan

Mitsunori Nakamori