Toshiba Kikai Kabushiki Kaisha

Tokyo Ohka Kogyo Co., Ltd.

Riken Corporation

Ulvac, Inc.

Marubun Corporation

Shibaura Machine Co., Ltd.

Fuji Jukogyo Kabushiki Kaisha

Dai Nippon Printing Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Nippon Tungsten Co., Ltd.

Dowa Holdings Co., Ltd.

Mitsunori Kokubo

Hideki Hirayama

Takaharu Tashiro

Ryuichiro Kamimura

Yamato Osada

Yukio Kashima

Yuki Sugiura

Eriko Matsuura

Kentaro Ishibashi

Takato Baba

Hiroshi Goto

Yukio Iimura

Masakazu Kanemoto

Hiroshi Okuyama

Toru Suzuki

Shigeru Fujiwara

Toshiro Morita

Satoshi Shimatani

Takafumi Ookawa

Toshiaki Goto

Tomohiro Inoue

Isao Matsuzuki

Takao Manabe

Shoichi Shin

Hidetoshi Kitahara

Yasuhiko Nagakura

Masafumi Tsunada

Masafumi Jo

Hideyuki Yamada

Noritoshi Maeda

Mitsuo Nagashima

Yuhei Yamakawa

Yukio Nakajima

Kiyoshi Kondo

Yuki Hashimoto

Yasuhiro Watanabe

Takeshi Iwai

Tatsuya Shimoda

Hideki Takagi

Shinya Itani

Haruyuki Matsubayashi

Hiroshi Uchimura

Yu Murofushi

Sung Won Youn

Kazunori Urushibata

Yutaka Tsukita

Kanji Furuta

Yohei Aoyama

Yasushi Iwaisako

Terukatsu Kuboki

Tsugumi Nagano

Hiromi Masuda

According to one embodiment, a transfer apparatus includes a coating part for coating an uncured resin on a substrate, a substrate installation part for positioning and installing the substrate integrally, a mold installation part for installing a sheet-like mold, a transfer roller for transferring a fine transfer pattern formed on the mold to the resin coated on the substrate, and a plasma unit for cleaning the mold by irradiating plasma to the mold peeled off from the resin after transferring. After cleaning by the plasma using the plasma unit, the cleaned mold is used again for transferring of the transfer pattern.

Transfer apparatus

A deep ultraviolet LED with a design wavelength &#x3bb;, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies &#x3bb;/2n(where &#x3bb; is the design wavelength and n1Deff is the effective average refractive index of each film of the stacked structure from the end face of each void to the i-guide layer) in the perpendicular direction, the distance being in the range of 53 to 57 nm, the two-dimensional reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components, and provided that the period a of the two-dimensional reflecting photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength &#x3bb;, the order m of a formula of the Bragg condition: m&#x3bb;/n=2(where m is the order, &#x3bb; is the design wavelength, nis the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2&#x2264;m&#x2264;4, and the radius of each void is R, R/a satisfies 0.30&#x2264;R/a&#x2264;0.40.

Deep ultraviolet LED and method for producing the same

A transfer apparatus of an embodiment includes a substrate installation part on which a substrate provided with an uncured material is installed, a mold presser roller for pressing the mold against the substrate by a movement of the mold presser roller to the substrate installed on the substrate installation part, and a material recovery unit capable of recovering the uncured material protruding from between the substrate and the mold by the movement of the mold pressure.

Transfer apparatus and transfer method

A transfer apparatus includes a rolled web mold installation part for installing a rolled web mold around which the mold is wound, a transfer roller for winding the mold fed out from the rolled web mold, a winding roll for winding up the mold, a winding roll installation part for installing the winding roll therein, and a mold installation assisting part for guiding the mold fed out from the rolled web mold up to the winding roll while suppressing an occurrence of wrinkles in the mold fed out from the rolled web mold.

According to one embodiment, under a condition that a substrate is installed on a substrate installation unit, a mold is installed on a mold installation unit, and a mask unit is installed in a mask-unit installation unit, a transfer apparatus controls an operation of a mold presser unit so as to press the mold against the substrate, the operation of a first positioning unit so as to position the mask unit with respect to the mold and the operation of an irradiation unit so as to irradiate an uncured material provided on the surface of the substrate with electromagnetic waves of a predetermined wavelength.

Transfer method, transfer apparatus, and mold

Provided is a deep ultraviolet LED with a design wavelength &#x3bb;, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength &#x3bb;. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.

Deep ultraviolet LED and method for manufacturing the same

An apparatus for manufacturing a molded body assembly includes: a to-be-molded body holder configured to hold a to-be-molded body placed thereon; a raw material roll placement portion in which a mold raw material roll is placed; a mold holder configured to hold a leading edge portion of an uncut mold extending from the mold raw material roll, and to move relative to the to-be-molded body holder; a transfer unit configured to transfer a fine transfer pattern of the uncut mold to the to-be-molded body placed on and held by the to-be-molded body holder, a cutting unit; and a controller configured to control the to-be-molded body holder, the mold holder, the transfer unit, and the cutting unit configured to cut the uncut mold at a predetermined position in a longitudinal direction thereof, thereby manufacturing a mold body assembly.

Apparatus for manufacturing molded body assembly

According to one embodiment, a transfer apparatus includes a transfer roller which supports a mold and transfers a fine transfer pattern formed on the mold to a resin coated on a substrate installed in a substrate installation part with movement of the transfer roller and a transfer roller guide part for guiding the transfer roller when the mold is pressed against the resin coated on the substrate installed in the substrate installation part by the movement of the transfer roller.

A machine tool includes: a spindle head; a spindle rotatably supported on the spindle head; a chuck unit configured to chuck a tool inserted in an axis direction of the spindle; a tool holder configured to hold the tool attached to the chuck unit; and a rotary arm configured to move the tool holder to a reachable position of the spindle. The tool holder is supported on the rotary arm by a support mechanism, and the support mechanism includes a displacement following mechanism configured to support the tool holder on the rotary arm in a manner to be capable of displacing the tool holder in a direction intersecting an axis of the tool.

Machine tool

The light extraction efficiency of a deep ultraviolet LED is increased. The deep ultraviolet LED has a design wavelength &#x3bb;, and includes, sequentially arranged from a side opposite to a substrate, a reflecting electrode layer, a metal layer, a p-GaN contact layer, a p-AlGaN layer that is transparent to light with the wavelength &#x3bb;, one of a multi-quantum barrier layer or an electron blocking layer, a barrier layer, and a quantum well layer. A thickness of the p-AlGaN layer is less than or equal to 100 nm. A reflecting photonic crystal periodic structure having a plurality of voids is provided in a region in a thickness direction including at least an interface between the p-GaN contact layer and the p-AlGaN layer such that the reflecting photonic crystal periodic structure does not extend beyond the p-AlGaN layer in a direction of the substrate. Maximum light extraction efficiency is obtained when a distance from end faces of the voids in the direction of the substrate to the quantum well layer is greater than or equal to a total thickness of the barrier layer and the multi-quantum barrier layer (or the electron blocking layer) and less than or equal to 80 nm, and a depth h of each void is less than or equal to a total thickness of the p-AlGaN layer and the p-GaN contact layer. The reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components. A period a of the photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength &#x3bb;. An order m in a formula of the Bragg condition satisfies 1&#x2264;m&#x2264;5. Provided that a radius of each void is R, R/a with which the photonic band gap becomes maximum is satisfied.

Provided is a deep ultraviolet LED with a design wavelength &#x3bb;, including an Al reflecting electrode layer, an ultrathin metal layer, and a transparent p-AlGaN contact layer that are sequentially arranged from a side opposite to a substrate, and a photonic crystal periodic structure provided in the range of the thickness direction of the transparent p-AlGaN contact layer. The photonic crystal periodic structure has a photonic band gap.

A semiconductor light emitting element with a design wavelength of &#x3bb;, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength &#x3bb; satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength &#x3bb; becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.

Semiconductor light emitting element and method for producing the same

A transfer device that transfers a fine transfer pattern formed on a master mold to a molded material, includes a first transfer unit that transfers the fine transfer pattern formed on the master mold to a replica mold made from a material that transmits light; and a second transfer unit that transfers a fine transfer pattern formed on the replica mold by the first transfer unit to the molded material.

Transfer device, molded material and transfer method

A deep ultraviolet LED with a design wavelength of &#x3bb; is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of &#x3bb;; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Growing community of inventors

Numazu, Japan

Mitsunori Kokubo