Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Mitsunori Ishisaka

Toshimitsu Miyata

Katsuhisa Kasanami

Satoshi Takano

Shuhei Saido

Hidenari Yoshida

Yusaku Okajima

Takafumi Sasaki

Hideharu Itatani

Sadayoshi Horii

Yuichi Wada

Tetsuaki Inada

Motonari Takebayashi

Mitsuhiro Hirano

Hidetoshi Mimura

According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

Substrate processing apparatus, quartz reaction tube and method of manufacturing semiconductor device

A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.

Substrate processing apparatus, method of manufacturing semiconductor device, and method of processing substrate

Provided is a substrate processing apparatus including a partitioned susceptor and configured to heat a substrate uniformly for improving process quality and yield. The substrate stage comprises a plurality of susceptor segments embedded with heating units, a substrate stage unit comprising the plurality of susceptor segments arranged in a flat configuration to define a substrate placement surface, and a uniform heating part mounted at the substrate placement surface.

Substrate stage of substrate processing apparatus and substrate processing apparatus

A tubular electrode () and a tubular magnet () are installed on an external section of a processing furnace () for an MMT device. A susceptor () for holding a wafer () is installed inside a processing chamber () of the processing furnace. A gate valve () for conveying the wafer into and out of the processing chamber; and a shower head () for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode () and a heater () are installed inside the susceptor () with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Semiconductor producing device and semiconductor device producing method

Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main bodyof the susceptorof an MMT apparatus is composed of a heater arranging plate, an electrode arranging plate, and a supporting plateall made from quartz. A circular electrode arranging holewith a fixed depth is concentrically formed on the upper surface of the electrode arranging plate, and quadrangular pillarsare formed protruding in a matrix on the bottom of the electrode arranging hole. Multiple insertion holesare formed in a disk-shaped high-frequency electrode, and the high-frequency electrodeis installed in the electrode arranging holeby inserting each pillarinto each insertion hole. The gaps Sa and Sb are provided between the high-frequency electrodeand the electrode arranging plate. The pillarboosts the strength of the electrode arranging plate. Damage to the high-frequency electrode is prevented even if the thermal expansion coefficient of the high-frequency electrode is larger than that of the electrode arranging plate, since the gaps absorb the thermal expansion differential.

Semiconductor manufacturing device and method for manufacturing semiconductor devices

Growing community of inventors

Toyama, Japan

Mitsunori Ishisaka