Stanley Electric Co., Ltd

Mitsunori Harada

Kaori Tachibana

Satoshi Ando

Masanori Sato

Yasushi Yatsuda

Kenichi Kondo

Ji-Hao Liang

Hiroshi Kotani

Yasuyuki Kawakami

Shuichi Ajiki

Shuichi Taya

Soji Owada

Takahiro Saida

Shunya Ide

Tsutomu Akagi

Kyotaro Koike

Shinichiro Seki

Kenichi Kawano

Tatsuma Saito

Mamoru Miyachi

Kazuhiko Ueno

Yasuyuki Miyake

Takashi Akutagawa

Takashi Ebisutani

Masami Kumei

Yuji Takehara

Koichi Takayama

Masao Aoyama

A light-emitting device according to the present invention comprises: a mounting board; a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer, a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer; a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity. The translucent member includes a thin film portion having a constant film thickness between the wavelength conversion member and the resin member in a region between the plurality of light-emitting elements, and the constant film thickness is smaller than a distance between a top surface of the supporting substrate and a lower surface of the wavelength conversion member.

Light-emitting device

Provided is a light-emitting device having a plurality of light-emitting elements with high operation stability and light extraction efficiency. The light-emitting device includes: a light-emitting element; a translucent member which is disposed on the light-emitting element and has a columnar first portion having a bottom surface opposed to an upper surface of the light-emitting element, a second portion formed continuously with the first portion on the first portion and narrowed upward, and a columnar third portion formed continuously with the second portion on the second portion; and a reflective member configured to cover the side surfaces of the translucent member. In this light-emitting device, the height of the first portion of the translucent member in a direction perpendicular to the bottom surface thereof is &#x2159; or more the height of the translucent member in the direction perpendicular to the bottom surface.

A light-emitting device having light-emitting elements with high operation stability and light extraction efficiency is provided. The light-emitting device includes: a substrate; light-emitting elements aligned and arranged on the substrate in an arrangement direction; wavelength conversion layers each disposed on each of the light-emitting elements with a light-transmitting adhesive interposed therebetween, each of the wavelength conversion layers having an upper surface smaller than a bottom surface, and a side surface shape in which a length in a lateral direction parallel to the bottom surface and perpendicular to the arrangement direction decreases from the bottom surface toward the upper surface; a light-transmitting plate disposed over the wavelength conversion layers; and a reflective resin covering side surfaces of the light-emitting elements, the wavelength conversion layers, and the light-transmitting plate. A side surface of the wavelength conversion layer facing to another adjacent wavelength conversion layer extends in a direction perpendicular to the substrate.

A high-quality semiconductor light emitting device is provided, which include: a semiconductor light emitting element; and a light transmitting member disposed on or above the semiconductor light emitting element and including a wavelength conversion material at least in part. The light transmitting member includes: a first portion having side surfaces all being a vertical surface; a second portion disposed on the first portion and including an inclined surface on at least part of the side surfaces; and a third portion disposed on the second portion and having side surfaces all being a vertical surface. The third portion has an upper surface of which a size is smaller than a size of a lower surface of the first portion.

Semiconductor light emitting device and light transmitting member

A semiconductor light-emitting apparatus is constructed by a wiring substrate, at least one semiconductor light-emitting element provided on the wiring substrate, at least one wavelength-converting member provided on the semiconductor light-emitting element, and a light reflection adjusting member directly covering a sidewall of the semiconductor light-emitting element and a sidewall of the wavelength-converting member. The light reflection adjusting member is formed of gray resin including light reflecting fillers and light absorbing fillers for visible light.

Semiconductor light-emitting apparatus having light reflection adjusting member of gray resin and its manufacturing method

A method for manufacturing a semiconductor light-emitting apparatus includes: forming multiple eutectic material layers on multiple first electrode patterns, respectively, of a wiring substrate; mounting multiple semiconductor light-emitting elements on the multiple eutectic material layers, respectively; mounting a plate on the multiple semiconductor light-emitting elements via multiple eutectic temperature liquid layers, respectively, the multiple eutectic temperature liquid layers maintaining a liquid state even at a eutectic temperature of the multiple eutectic material layers; and heating and cooling the multiple eutectic material layers and the multiple temperature liquid layers while the plate is adhered via the multiple eutectic temperature liquid layers to the multiple semiconductor light-emitting elements by the surface tension phenomenon.

Semiconductor light-emitting apparatus having multiple semiconductor light-emitting elements and its manufacturing method

A semiconductor light-emitting device having a longitudinal direction, and able to smoothly incline luminance for the longitudinal direction is provided. The semiconductor light-emitting device comprises a substrate and a plurality of semiconductor light-emitting layers of a predetermined shape disposed in a row on the substrate. The semiconductor light-emitting layers have such a structure that light emission amount of light-emitting surface of each semiconductor light-emitting layer inclines from a side of one predetermined end toward a side of the other end for the direction of the row.

Semiconductor light-emitting device, lighting apparatus, and lighting unit for vehicles

A wavelength converting device, a method for manufacturing the device and a lighting unit using the device can emit various color lights. The converting device can include a substrate, a filter disposed on the substrate and the wavelength converting layer including a plurality of wavelength converting chips disposed on the filter, and can be manufactured by almost cutting process. The lighting unit using the device includes a laser device, a movable mirror and a controller, which enables the laser device to generate a pulsed laser beam and enables the movable mirror to scan the pulsed laser beam into a respective one of the wavelength converting chips. Thus, the disclosed subject matter can provide the wavelength converting device, which can form various colored light distribution patterns including a white light to use for a headlight and the like, and can provide methods for efficiently manufacturing such the devices with high accuracy.

Wavelength converting device, methode for manufacturing the same and lighting unit using the same

A light emitting device can include a head portion including a surface including a convex portion, a back surface on the opposite side, and a through hole penetrating a tip surface of the convex portion and the back surface; a light-transmitting member including a surface and a back surface on the opposite side, the back surface including a first recess to be fitted to the convex portion; an adhesive bonding part of the surface of the head portion around the convex portion to the back surface of the light-transmitting member while the convex portion is fitted to the first recess and the first recess covers the through hole; a semiconductor light emitting element that emits light passing through the through hole for irradiation of the light-transmitting member; and an optical system condensing the light from the semiconductor light emitting element and locally irradiates the light-transmitting member with the light.

Light emitting device and vehicle lamp

A light emitting apparatus with a combination of a plurality of LED chips and a phosphor layer is provided and can be configured to significantly reduce variations in chromaticity and luminance. The plurality of semiconductor light emitting devices (LED chips) are disposed with a gap therebetween, and the phosphor layer is formed on the upper surface thereof to bridge over the gaps between the LED chips. The phosphor layer may be uniform in thickness, but can be less in thickness over the gaps between the LED chips than on the upper surface of the LED chips. The phosphor layer can be continuously formed on the upper surface of the array of the chips with no phosphor layer present in between the chips. This configuration allows for reducing variations in luminance and chromaticity which may result from the gaps or the phosphor layer present in between the gaps.

Semiconductor light emitting apparatus

A light emitting element in use for an LED array comprises an electrode layer, a semiconductor light emitting layer consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first wiring layer formed along and in parallel to one side of the semiconductor light emitting layer, and a plurality of second wiring layers extending from the first wiring layer to the semiconductor light emitting layer and electrically connected to the n-type semiconductor layer on a surface of the semiconductor light emitting layer, wherein a plane shape of the semiconductor light emitting layer comprises two short sides including a portion inclined from a line perpendicular to a upper and a lower sides, and a vertical line from a vertex where the upper side and the short side meet crosses the lower side of the adjacent light emitting element.

LED array capable of reducing uneven brightness distribution

A semiconductor light emitting device can include a base having a cavity provided for housing an LED chip and a resin spacer therein. The resin spacer can be composed of at least two layers of spacers including a transparent resin spacer and a wavelength conversion spacer mixed with a fluorescent material and formed to have an almost constant thickness. The wavelength conversion spacer can include a metallic radiation mesh or radiation wire disposed therein.

Semiconductor light emitting device and method of manufacturing the same

A semiconductor light source apparatus can include a clad layer, a phosphor layer surrounded by the clad layer and a laser diode emitting a laser light. The phosphor layer can include a cavity having an opening for receiving the laser light, a phosphor material and a light-emitting surface of the apparatus. The laser light entering into the cavity can repeatedly reflect on an inner surface of the phosphor layer many times, each and every time most of the laser light entering into the phosphor layer. The laser light can be efficiently wavelength-converted by the phosphor material and the wavelength converted light can be emitted from the light-emitting surface having various shapes exposed from the clad layer. Therefore, the disclosed subject matter can include providing semiconductor light source apparatuses having a high light-emitting efficiency and high light-emitting density such that the devices can be used for a headlight, general lighting, etc.

Semiconductor light source apparatus

A vehicle light is provided which can form a light distribution pattern having a clear cut-off line. The vehicle light can include a semiconductor light emitting device as a light source. The semiconductor light emitting device can include a semiconductor light emitting element having a light emission surface thereof having a first end and a second end and at least one light extracting layer deposited on the light emission surface and including a wavelength conversion layer, and the light extracting layer includes an optical characteristic that can change from the first end to the second end in a direction parallel to the light emission surface so that the semiconductor light emitting device forms a luminance distribution with a maximum luminance at the first end and a minimum luminance at the second end.

Growing community of inventors

Tokyo, Japan

Mitsunori Harada