Sony Corporation

Mitsunobu Sekiya

Naoki Sano

Tatsuya Sasaoka

Tetsuo Nakayama

Jiro Yamada

Masaki Hara

Toshiyuki Sameshima

Yuichi Iwase

Tetsuo Urabe

Machio Yamagishi

Yasuhiro Chiba

Mitsuru Asano

Yasuhiro Kanaya

Akira Yumoto

Toru Udaka

Takao Mori

Toru Kihira

Michihisa Yano

Tasuya Sasaoka

Atsushi Kohno

A method of manufacturing a display device including the steps of: forming drive elements on a substrate; forming a planarization film in a position corresponding to each of the drive elements; forming a bottom electrode corresponding to each of the plurality of organic light emitting elements; forming a pixel isolation insulating film in a region between the bottom electrodes; forming an organic layer including a light emission layer above the bottom electrode by evaporation using an evaporation mask; and forming a top electrode over the organic layer. In the step of forming the bottom electrode includes the steps of: forming a bottom electrode material film; forming a photoresist film on the bottom electrode material film; exposing the photoresist film using the evaporation mask and developing it; and selectively removing the bottom electrode material film by etching using the photoresist film as a mask.

Method of manufacturing display device and display device

An active-matrix-type display apparatus ensuring sufficient luminous intensity of display devices within a display plane and allowing improved display properties is provided. Such display apparatus having of a plurality of pixels comprises a lower electrode formed on a substrate; organic layers formed on the lower electrode; and an upper common electrode formed on the organic layers; in which a plurality of the pixels are partitioned by a rib larger in the thickness than the organic layers and having at least a conductive material layer; and the conductive material layer is electrically connected to the upper common electrode.

Display apparatus and method for fabricating the same

A display apparatus includes a substrate, a plurality of pixels formed on the substrate, and a barrier plate for separating adjoining pixels from each other. Each pixel includes a lower layer portion having wiring formed on the substrate, an upper layer portion having an organic electro-luminescent element, and a middle layer portion for insulating the lower layer portion and the upper layer portion from each other electrically. The organic electro-luminescent element is connected with the windings through a contact hole formed in the middle layer portion. The barrier plate is disposed in the upper layer portion so as to overlap with a region including a contact hole not suitable for forming the organic electro-luminescent element.

Display apparatus using organic electroluminescent element and manufacturing method thereof

An organic electroluminescence display in which plural rows of scanning lines and plural columns of signal lines are arranged, and pixels are arranged at the portions where said scanning lines intersect said signal lines The pixels have an organic electroluminescence layer inclusive of an organic light-emitting layer held between first pixel electrodes constituted by said scanning lines and second pixel electrodes connected to said signal lines The second pixel electrodes are arranged so that the second pixel electrodes are overlapped on said scanning lines in a direction in which said signal lines are extending and each of said second pixel electrodes overlap at least two neighboring signal lines.

Organic electroluminescence display

In an active matrix type display apparatus according to the present invention, the following measures are provided when stacking, on a substrate, a device layer (light emitting portion) formed by arranging a light emitting portion in a sub-pixel unit and a circuit layer (sub-pixel circuit) formed by arranging a sub-pixel circuit for driving the light emitting portion in the sub-pixel unit: the apparatus has a stripe arrangement as the arrangement of sub-pixel circuits and a delta arrangement as the arrangement of light emitting portions. Therefore, it is possible to improve reliability of the sub-pixel circuits while utilizing the advantages of the delta arrangement of the light emitting portions, and thus realize a high-reliability, high-definition, and high-brightness display apparatus.

Active matrix type display apparatus

Display apparatus with ribs having conductive material

An optical device includes an insulation layer formed on a lead electrode of an electrode, an electrode having an indium doped tin oxide in which indium/tin is 1.5 or less by the element ratio, an electrode having a laminate including an oxide layer in which indium is doped to tin and a tin oxide layer, and an electrode having conductive particles as a first layer, a polymeric layer as a second layer and a current collector as a third layer, and the second layer is disposed between the first layer and the third layer. A control device controls a driving current to an electrode in accordance with a temperature and a current supply supplies a current to an electrode for supplementing a dissolved portion of electrodeposited material. The optical device includes a polarization device which polarizes an electrode to an oxidation direction before electrodeposition on the electrode.

Optical device, a fabrication method thereof, a driving method thereof and a camera system

A display apparatus includes a substrate, a plurality of pixels formed on the substrate, and a barrier plate for separating adjoining pixels from each other. Each pixel includes a lower layer portion having wiring formed on the substrate, an upper layer portion having an organic electro-luminescent element, and a middle layer portion for insulating the lower layer portion and the upper layer portion from each other electrically. The organic electro-luminescent element is connected with the wiring through a contact hole formed in the middle layer portion. The barrier plate is disposed in the upper layer portion so as to overlap with a region including a contact hole not suitable for forming the organic electro-luminescent element.

The invention provides an image display apparatus which increases the degree of freedom in designing of an active element of a pixel to allow good designing and can adjust the display brightness freely and simply. Each pixel includes a light emitting element (OLED) with a brightness value which varies depending upon an amount of current supplied thereto, a first TFT controlled by a scanning line for writing brightness information given thereto from a data line into the pixel, and a second TFT for controlling the amount of current to be supplied to the OLED corresponding to the brightness information written. Writing of the brightness information into each pixel is performed by applying an electric signal corresponding to the brightness information to the data line while the scanning line is selected. The brightness information written in each pixel is held by the pixel also after the scanning line is placed into a non-selected state so that the OLED can continue lighting with a brightness value corresponding to the brightness information held by the pixel. A stopping control line compulsorily extinguishes the OLEDs of the pixels connected to the same scanning line at least in a unit of a scanning line so that the OLEDs are placed into an extinguished state from a lit state within a period of one scanning cycle after the brightness information is written into the pixels until new brightness information is written into the pixels subsequently.

Image display apparatus

A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400&deg; C. in the atmosphere containing a gas of water (H O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

Process of manufacturing semiconductor device

To provide an optical element in which resistance of electrodes on a scanning side is reduced, a rate of effectively utilizing light generated at organic layers is promoted and shortcircuit between anodes and cathodes is prevented, there is provided an optical element including first electrodes formed on a substrate, organic layers at least including organic light emitting materials formed on the first electrodes and second electrodes formed on the organic layers, in which the first electrodes and the second electrodes are formed to be substantially orthogonal to each other and the organic layers are formed in an island-like shape at positions at which the first electrodes and the second electrodes intersect with each other.

Optical element

An organic EL display that realizes low electric power consumption and display with high brightness by decreasing the resistance of the electrode on the scanning side is provided. The display device of the invention includes a substrate, first electrodes in a stripe form comprising a transparent conductive material formed on the substrate, an insulating film having prescribed openings formed on the first electrodes, an organic layer comprising an organic light emitting material formed on the openings and the insulating film, and second electrodes in of a stripe form formed on the organic layer, wherein the first electrodes comprise a material having a large resistance than a resistance of the second electrodes, the first electrodes and the seconds electrode are arranged to cross each other, the organic layer is formed only in the crossing part of the first electrodes and the second electrodes, a first circuit supplying a first electric current is connected to the first electrodes, and a second circuit supplying a second electric current larger than the first electric current is connected to the second electrodes.

A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400&deg; C. in the atmosphere containing a gas of water (H,O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

Process of manufacturing semiconductor devices

The present invention provides a method of manufacturing an organic EL display capable of decreasing the resistance of scanning-side electrodes, and improving the efficiency of utilization of light emitted in organic layers. In the manufacturing method, stripe first electrodes made of a transparent conductive material are formed in parallel on a transparent substrate, and then an insulation layer is formed on the transparent substrate with the apertures formed above the first electrodes. An organic film 24 composed of a film of an organic luminescent material, a second electrode material film and a protecting film is laminated in this order on the transparent substrate to cover the insulation layer, and then independent island resist patterns are formed on the protecting film. Then, a laminated film composed of the organic film, the second electrode material film and the protecting film is etched using the resist patterns as a mask to pattern independent island laminations each composed of an organic layer, a second electrode, and a protecting layer.

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Kanagawa, Japan

Mitsunobu Sekiya