Sharp Kabushiki Kaisha Corporation

Mitsunobu Miyamoto

Makoto Nakazawa

Tadayoshi Miyamoto

Kazuatsu Ito

Seiichi Uchida

Yasuyuki Ogawa

Shigeyasu Mori

Yutaka Takamaru

Takuya Matsuo

A semiconductor device (A) includes a substrate (), an oxide semiconductor layer () formed on the substrate (), source and drain electrodes () electrically connected to the oxide semiconductor layer (), a first transparent electrode () electrically connected to the drain electrode (), a dielectric layer () formed on the source and drain electrodes (), and a second transparent electrode () formed on the dielectric layer (). The upper and/or lower surface(s) of the first transparent electrode () contacts with a reducing insulating layer () with the property of reducing an oxide semiconductor included in the oxide semiconductor layer (). The second transparent electrode () overlaps at least partially with the first transparent electrode () via the dielectric layer (). The oxide semiconductor layer () and the first transparent electrode () are formed out of the same oxide film.

Semiconductor device and method for producing same

This semiconductor device (A) includes: a substrate (); a gate electrode () formed on the substrate (); a gate insulating layer () formed over the gate electrode (); an oxide semiconductor layer () formed on the gate insulating layer (); source and drain electrodes () electrically connected to the oxide semiconductor layer (); a first transparent electrode () electrically connected to the drain electrode (); an interlayer insulating layer () including portions formed on the source and drain electrodes (); and a second transparent electrode () formed on the interlayer insulating layer (). At least a portion of the second transparent electrode () overlaps with the first transparent electrode () with the interlayer insulating layer () interposed between them. And the oxide semiconductor layer () and the first transparent electrode () are formed out of a same oxide film.

This semiconductor device (A) includes: an oxide layer () which includes a semiconductor region () and a conductor region () that contacts with the semiconductor region; a source electrode () and a drain electrode () which are electrically connected to the semiconductor region; an insulating layer () formed on the source and drain electrodes; a transparent electrode () arranged to overlap at least partially with the conductor region with the insulating layer interposed between them; a source line () formed out of the same conductive film as the source electrode; and a gate extended line () formed out of the same conductive film as a gate electrode (). The source line is electrically connected to the gate extended line via a transparent connecting layer () which is formed out of the same conductive film as the transparent electrode.

Semiconductor device and method of manufacture thereof

This semiconductor device () includes: a gate electrode (); a gate insulating layer (); an oxide layer () which is formed on the gate insulating layer () and which includes a first conductor region () and a first semiconductor region () that overlaps at least partially with the gate electrode () with the gate insulating layer () interposed between them; a source electrode () formed to contact with the upper surface of the first semiconductor region () of the oxide layer (); a drain electrode () which is formed to contact with the upper surface of the first semiconductor region () of the oxide layer () and which is electrically connected to the first conductor region (); and a conductive layer () which is formed in contact with the upper surface of the oxide layer () and which a plurality of holes () or notches. The oxide layer () has a plurality of second conductor regions (), and each of which has a surface exposed inside respective one of the holes or notches of the conductive layer.

Semiconductor device and method for manufacturing same

This semiconductor device (A) includes: a substrate (); a gate electrode () and a first transparent electrode () which are formed on the substrate (); a first insulating layer () formed over the gate electrode () and the first transparent electrode (); an oxide semiconductor layer () formed on the first insulating layer (); source and drain electrodes () electrically connected to the oxide semiconductor layer (); and a second transparent electrode () electrically connected to the drain electrode (). At least a portion of the first transparent electrode () overlaps with the second transparent electrode () with the first insulating layer () interposed between them, and the oxide semiconductor layer () and the second transparent electrode () are formed out of the same oxide film.

This semiconductor device (A) includes: a substrate (); a gate electrode () formed on the substrate (); a gate insulating layer () formed over the gate electrode (); an oxide semiconductor layer () formed on the gate insulating layer (); source and drain electrodes () electrically connected to the oxide semiconductor layer (); a first transparent electrode () electrically connected to the drain electrode (); an interlayer insulating layer () including a dielectric layer () formed over the source and drain electrodes (); and a second transparent electrode () formed on the interlayer insulating layer (). At least a portion of the second transparent electrode () overlaps with the first transparent electrode () with the dielectric layer () interposed between them, and the oxide semiconductor layer () and the first transparent electrode () are formed out of the same oxide film.

Semiconductor device having transparent electrodes

A TFT substrate () is provided with TFTs disposed on a substrate (), first insulating layers () disposed above the TFTs, a lower layer transparent electrode () disposed above the first insulating layers (), a second insulating layer () covering the lower layer transparent electrode (), and pixel electrodes () disposed on the second insulating layer (), in which an auxiliary capacitance (Cs) is formed by means of the lower layer transparent electrode (), the second insulating layer (), and the pixel electrode (). The TFT and the pixel electrode () are electrically connected via a contact hole () penetrating the first insulating layers () and the second insulating layer (). A connecting transparent electrode () is disposed within the contact hole ().

TFT substrate, method for producing same, and display device

This semiconductor device (A) includes: a gate electrode () formed on a substrate (); a gate insulating layer () formed on the gate electrode; an oxide layer () which is formed on the gate insulating layer and which includes a semiconductor region () and a conductor region (); source and drain electrodes () electrically connected to the semiconductor region; a protective layer () formed on the source and drain electrodes; and a transparent electrode () formed on the protective layer. At least part of the transparent electrode overlaps with the conductor region with the protective layer interposed between them. The upper surface of the conductor region contacts with a reducing insulating layer () with the property of reducing an oxide semiconductor included in the oxide layer. The reducing insulating layer is out of contact with the channel region of the semiconductor region.

A method of manufacturing a thin film transistor substrate () includes at least the steps of: forming a gate electrode () on an insulating substrate () by using a first photomask; forming a channel protective film () on an oxide semiconductor layer () so as to cover a channel region (C) by using a second photomask; forming a source electrode () on the oxide semiconductor layer () by using a third photomask; and forming a planarizing film () on an interlayer insulating film () by using a fourth photomask.

Method of manufacturing a thin film transistor substrate and thin film transistor substrate manufactured by the same

A semiconductor device including a semiconductor layer, a plurality of electrode portions each overlapping the semiconductor layer, and an insulating film placed between the plurality of electrode portions to lie on the semiconductor layer is fabricated. The fabrication method includes the steps of: forming an oxide semiconductor layer part of which is covered with the insulating film; forming a conductive material layer to cover the oxide semiconductor layer and the insulating film; forming the plurality of electrode portions from the conductive material layer by photolithography and plasma dry etching, to expose part of the oxide semiconductor layer from the plurality of electrode portions and the insulating film; and removing the part of the oxide semiconductor layer exposed from the plurality of electrode portions and the insulating film to form the semiconductor layer.

Semiconductor device, fabrication method for the same, and display apparatus

A semiconductor device has a planarizing layer that is made of an inorganic film, and has a recessed portion formed in a region thereof in which a conductive film is disposed. A first contact hole penetrating through at least an interlayer insulating film is formed on a first wiring layer, while a second contact hole penetrating through at least the interlayer insulating film is formed on the conductive film so as to run through the inside of the recessed portion.

Semiconductor device and method of producing same

A first contact hole that passes through a planarizing film layered on a first interlayer insulating film, a second interlayer insulating film that covers the surface of the planarizing film and the inner surface of the first contact hole, a third interlayer insulating film layered on the second interlayer insulating film, and a second contact hole formed with a small inner diameter inside the first contact hole and passing through the first to the third interlayer insulating films are formed. Over the third interlayer insulating film and inside the second contact hole, a second conductive film electrically connected to a first conductive film is formed.

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Osaka, Japan

Mitsunobu Miyamoto