Matsushita Electric Industrial Co., Ltd.

Mitsunari Satake

Mikio Nishio

Tomoyasu Murakami

Takeshi Harada

Masashi Hamanaka

Hideaki Yoshida

Takenobu Kishida

Toru Hinomura

Hiromitsu Abe

Kenichi Kunimitsu

A first metal film is deposited on a bottom and a wall of a recess formed in an insulating film on a semiconductor substrate. A second metal film is filled in the recess on the first metal film. The second metal film is formed from a polycrystalline tungsten film having a crystal plane of a (110) orientation.

Method for fabricating a semi-conductor device having a tungsten film-filled via hole

Holes are formed in a first insulating film deposited on a substrate. After depositing a first conducting film over the first insulating film including the holes, the first conducting film is subjected to first CMP, so as to form plugs from the first conducting film. Next, the first insulating film is subjected to second CMP with a polishing rate of the first insulating film higher than a polishing rate of the first conducting film, so as to planarize the first insulating film by eliminating erosion caused in a region of the first insulating film where the plugs are densely formed. After depositing a second insulating film on the planarized first insulating film, interconnect grooves are formed in the second insulating film. After depositing a second conducting film over the second insulating film including the interconnect grooves, the second conducting film is subjected to third CMP, so as to form buried interconnects from the second conducting film.

Method for forming buried interconnect

An apparatus for holding a substrate to be polished comprises: a rotating rotary shaft; a substrate holding head in the form of a disc; a sealing member provided to the back face of the substrate holding head; a guiding member which is provided to the back face of the substrate holding head to be located outside the sealing member; and a fluid flow path which vertically penetrates the inside of the substrate holding head. The fluid flow path allows an air under pressure introduced from the upper end side thereof to flow out through the opening at the lower end thereof to a space. The sealing member is formed with a ventilation body having a large number of successive vent openings in the inside such as nonwoven fabric.

Apparatus for holding substrate to be polished

A rotatable platen has a polishing pad adhered to the top surface thereof. A carrier for holding a substrate and a slurry supply pipe for supplying an abrasive slurry onto the near-center region of the polishing pad are provided above the polishing pad. Two lamps for partially irradiating the surface of the polishing pad with visible light or infrared light are provided at respective locations above the polishing pad and upstream of the carrier in the direction of rotation of the platen. Of the area of the polishing pad in contact with the substrate, a region closer to the center of rotation of the polishing pad and a region farther away therefrom are heated by the two lamps.

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Katano, Japan

Mitsunari Satake