Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Mitsumi Itoh

Hiroyuki Tsujikawa

Kenji Shimazaki

Hiroshi Benno

Masatoshi Sawada

Junko Honma

It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.

Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device, and apparatus for generating pattern for semiconductor device

Semiconductor device method of generating semiconductor device pattern method of semiconductor device and pattern generator for semiconductor device

Growing community of inventors

Kyoto, Japan

Mitsumi Itoh