Fujifilm Corporation

Mitsumasa Hamano

Kimiatsu Nomura

Tetsuro Mitsui

Katsuyuki Yofu

Hideyuki Suzuki

Eiji Fukuzaki

Masayuki Hayashi

Yuki Hirai

Naohiro Matsunaga

Yusuke Hatanaka

Naotoshi Sato

Diago Sawaki

Provided is an antibacterial liquid with excellent temporal stability in which caking due to sedimentation of solid components does not occur and with which a film capable of stably maintaining antibacterial properties can be formed, in a case of being formed into a film. Also provided are an antibacterial film formed using the antibacterial liquid, and a spray and a cloth including the antibacterial liquid. The antibacterial liquid includes an antibacterial microparticle, a binder, and a solvent, in which the antibacterial microparticle contains a silver-supporting inorganic oxide, the binder includes at least one compound having a siloxane bond, the solvent includes an alcohol and water, the concentration of solid contents is less than 5% by mass with respect to the total mass of the antibacterial liquid, and the content of the compound having a siloxane bond is 60% by mass or more with respect to the total solid content of the antibacterial liquid.

Antibacterial liquid, antibacterial film, spray and cloth

Provided are an antibacterial liquid having excellent sedimentation resistance, an antibacterial film formed using the antibacterial liquid, and a wet wipe produced using the antibacterial liquid. The antibacterial liquid is an antibacterial liquid including antibacterial microparticles, a binder, and a solvent, in which the antibacterial microparticles contain a silver-supporting inorganic oxide, the average particle size of the antibacterial microparticles is 1.0 &#x3bc;m or less, the binder includes at least one silane compound, the solvent includes an alcohol and water, and the content of the alcohol with respect to the total mass of the antibacterial liquid is 10% by mass or more.

Antibacterial liquid, antibacterial film, and wet wipe

In the photoelectric conversion device having a pair of electrodes and a light receiving layer sandwiched between the pair of electrodes and including at least a photoelectric conversion layer, at least a part of the light receiving layer includes a fullerene or a fullerene derivative deposited using a vapor deposition material of a plurality of particles or a compact formed of the particles consisting primarily of the fullerene or fullerene derivative with an average particle size expressed as D50% of 50 to 300 &#x3bc;m.

Photoelectric conversion device vapor deposition material, photoelectric conversion device, sensor, and imaging device

There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol&#xb7;l&#xb7;cmor more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point&#x2212;a deposition temperature) is 31&#xb0; C. or more.

Photoelectric conversion material, film containing the material, photoelectric conversion device, method for preparing photoelectric conversion device, method for using photoelectric conversion device, photosensor and imaging device

A photoelectric conversion device comprising an electrically conductive film, an organic photoelectric conversion film, and a transparent electrically conductive film, wherein the organic photoelectric conversion film contains a compound represented by the following formula (1) and an n-type organic semiconductor: 

Photoelectric conversion device, photoelectric conversion device material, photosensor and imaging device

An organic compound and a photoelectric conversion device containing the organic compound are disclosed. The organic compound and device realize high photoelectric conversion efficiency, low dark current and high-speed responsivity. It has been found that when this organic compound and an n-type semiconductor are used in combination, high-speed responsivity can be realized while maintaining high heat resistance, an aspect of which has not been seen when the connection part between a donor part and an acceptor part is a phenylene group.

Photoelectric conversion material, film containing the material, photoelectric conversion device, production method thereof, photosensor, imaging device and their use methods

A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative. Formula (I):  In the formula, Zrepresents an atomic group necessary for forming a 5- or 6-membered ring, L, Land Leach independently represents an unsubstituted methine group or a substituted methine group, Drepresents an atomic group, and n represents an integer of 0 or more.

Photoelectric conversion element and imaging device

Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device.

Photoelectric conversion device, method for manufacturing the same, photo sensor and imaging device

Provided is a photoelectric conversion device comprising an electrically conductive film, a photoelectric conversion film, and a transparent electrically conductive film, wherein the photoelectric conversion film contains a fullerene or a fullerene derivative and a photoelectric conversion material having an absorption spectrum satisfying at least either the following condition (A) or (B):&#x3bb;&#x3c;&#x3bb;and &#x3bb;&#x3c;&#x3bb;&#x2003;&#x2003;(A)&#x3bb;&#x3c;&#x3bb;and &#x394;|&#x3bb;&#x2212;&#x3bb;|&#x3e;&#x394;|&#x3bb;&#x2212;&#x3bb;|&#x2003;&#x2003;(B)wherein &#x3bb;, &#x3bb;, &#x3bb;and &#x3bb;are the wavelength at an absorption intensity of &#xbd; of the maximum absorption intensity in the wavelength range of from 400 to 800 nm, each of &#x3bb;and &#x3bb;represents the wavelength in a chloroform solution spectrum when the photoelectric conversion material is dissolved in chloroform, and each of &#x3bb;and &#x3bb;represents the wavelength in a thin-film absorption spectrum of the photoelectric conversion material alone, provided that &#x3bb;&#x3c;&#x3bb;and &#x3bb;&#x3c;&#x3bb;.

Photoelectric conversion device, production method thereof and imaging device

A photoelectric conversion device is provided, the photoelectric conversion device including: a pair of electrodes; a photoelectric conversion layer arranged between the pair of electrodes and containing an n-type organic semiconductor; and a charge blocking layer arranged between one of the pair of electrodes and the photoelectric conversion layer, the charge blocking layer being formed of a single layer or two or more layers, wherein a difference &#x394;1 between ionization potential Ip of a layer of the charge blocking layer adjacent to the photoelectric conversion layer and electron affinity Ea of the n-type organic semiconductor is at least 1 eV; and the charge blocking layer has a gross thickness of at least 20 nm.

Photoelectric conversion device and imaging device

Provided is an organic semiconductor which is a compound represented by the following formula (I): wherein each of R, R, R, Rand Rindependently represents a hydrogen atom or a substituent, and each of a pair of Rand Rand a pair of Rand Rmay combine to form a ring, Brepresents a ring structure containing at least one nitrogen atom, andn1 represents an integer of 0 to 2.

Organic semiconductor, photoelectric conversion device, imaging device and novel compounds

A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative. In the formula, Zrepresents an atomic group necessary for forming a 5- or 6-membered ring, L, Land Leach independently represents an unsubstituted methine group or a substituted methine group, Drepresents an atomic group, and n represents an integer of 0 or more.

Growing community of inventors

Kanagawa, Japan

Mitsumasa Hamano