Nec Corporation

Samsung Sdi Co., Inc.

Mitsuma Ooishi

Yoshikazu Sakaguchi

Eiichi Kitazume

Yoshikazu Yamaguchi

Ikuko Ishii

Teruo Kusaka

Joji Suzuki

An organic electroluminescent device according to the invention is provided with a transparent substrate, a transparent electrode formed on the transparent substrate, an organic thin film layer formed on the transparent electrode to be a front electrode in a display area, a back electrode formed opposite to the front electrode on the organic thin film layer, a metal auxiliary electrode to be leading wiring laminated on the transparent electrode outside the display area and a sealing member bonded and fixed to the transparent substrate so that it encircles the display area and is characterized in that one or plural locations which crosses/cross the metal auxiliary electrode and is/are non-continuous in the longitudinal direction of the metal auxiliary electrode is/are formed in the metal auxiliary electrode located in a bonded part of the transparent substrate and the sealing member.

Organic electroluminescent device having non-continuous metal auxiliary electrodes

An organic electro-luminescent display panel and a method of manufacturing same are provided which are capable of reliably holding a hygroscopic agent in its sealing cap in a uniform and thin state and of being easily manufactured and of being configured to be of a thin-profile type, without sacrificing light-emitting characteristics and display contrast. The organic electro-luminescent display panel is constructed of a transparent insulating substrate, an organic electro-luminescent device formed on the transparent insulating substrate and a sealing cap to make up sealed space hermetically containing the organic electro-luminescent device in cooperation with the insulating substrate. The hygroscopic agent is enclosed hermetically in the sealed space and is of a powder or grain type, which is sandwiched between the sealing cap and an air-permeable sheet.

Organic electro-luminescent display panel

A cell plate electrode is shared between storage capacitors of memory cells incorporated in a semiconductor dynamic random access memory device of the type having the storage capacitors over bit lines, and slits are formed in the cell plate electrode in such a manner that the boundaries between channel regions and gate oxide layers are horizontally spaced from the outer periphery of the cell plate electrode and the slits by distances equal to or less than a critical distance determined on the basis of a diffusion length of hydrogen in an inter-level insulating layer, thereby causing the hydrogen to surely reach the boundaries for reducing the density of surface state.

Semiconductor integrated circuit device effectively decreased in surface state regardless of non-permeable layer for chemical species against surface state and process for fabricating thereof

Disclosed is an organic thin film EL device which has: a transparent insulative substrate and a sealing cap which are bonded together by an ultraviolet-activated adhesive; wherein the ultraviolet-activated adhesive is composed of a combination of adhesives with different hardening conditions to the irradiation of ultraviolet rays. Also disclosed is a method for making an organic thin film EL device composed of a transparent insulative substrate and a sealing cap which are bonded together by an ultraviolet-activated adhesive, the method having the steps of: disposing a plurality of the ultraviolet-activated adhesives with different hardening conditions to the irradiation of ultraviolet rays between the transparent insulative substrate and the sealing cap; and irradiating ultraviolet rays with different irradiation conditions to the plurality of the ultraviolet-activated adhesives in a plurality of separate steps so that the adhesives with different hardening conditions are hardened separately in each of the plurality of separate steps.

Organic thin film EL device and method for making the same

A solid relay having a light emitter and a photodetector and a method of producing the same are disclosed. A planer thyristor, photodiode, phototransistor or similar photodetector is formed on an Si substrate or wafer. The surface of the photodetector is covered with an SiO.sub.2, PSG (Phospher-Silicate Glass) or similar transparent insulation film. An ITO (Indium Tin Oxide) or similar transparent film, an organic thin film and a metal electrode are sequentially formed on the transparent insulation film, constituting a light emitter. The laminate is separated from the wafer in the form of a chip by dicing. The chip is bonded to a lead frame, connected to the leads of a lead frame by wire bonding, and then sealed with epoxy resin or similar resin.

Solid relay and method of producing the same

After the formation of a gate electrode, thermal oxidation is performed while an area where a source and drain are to be formed is covered with a gate insulating film, impurity ions are then injected to form low-concentration source and drain regions, an insulating spacer is then formed on the side surface of the gate electrode, and an insulating film is deposited on exposed source and drain regions by chemical vapor deposition. This allows the recovery of the breakdown voltage of the gate insulating film, which is damaged by an MOS transistor whose gate electrode contains a high melting-point metal silicide, and prevents metal oxide from being contained in the insulating film on the source and drain regions.

Method of fabricating field effect transistor with an LDD structure

A field effect transistor has a polycide structure having a doped polysilicon strip on a gate oxide layer and a crystal tungsten silicide strip on the doped polysilicon strip, and the polycide structure is formed through a process sequence having the steps of patterning an amorphous tungsten silicide layer into an amorphous tungsten silicide strip, crystallizing the amorphous tungsten silicide strip and patterning a doped polysilicon layer into the doped polysilicon strip, thereby preventing the crystal tungsten silicide strip from undesirable warp without contamination of the gate oxide layer.

Growing community of inventors

Tokyo, Japan

Mitsuma Ooishi