Sen Corporation, an Shi and Axcelis Company

Sumitomo Eaton Nova Corporation

Sen Corporation

Sumitomo Heavy Industries Ion Technology Co., Ltd.

Axcelis Technologies, Inc.

Mitsukuni Tsukihara

Mitsuaki Kabasawa

Michiro Sugitani

Takanori Yagita

Junichi Murakami

Hiroshi Matsushita

Yoshitaka Amano

Makoto Sano

Hiroshi Sogabe

Yoshitomo Hidaka

Keiji Okada

Tetsuya Kudo

Kouji Inada

Hiroshi Kawaguchi

Yoshito Fujii

Masamitsu Shinozuka

Fumiaki Sato

Hiroki Murooka

Suguru Hirokawa

Takashi Kuroda

Takashi Nishi

Tatsuya Yamada

Masaki Ishikawa

Shiro Ninomiya

Haruka Sasaki

Toshio Yumiyama

Noriyasu Ido

Hiroyuki Kariya

Kenji Sawada

Noriyuki Suetsugu

Hisaki Izutani

Kazunari Ueda

Yasuhiko Kimura

Yuji Takahashi

Hiroshi Matsuhita

An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.

Ion implanter, ion implantation method, and beam measurement apparatus

Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target.

Beam irradiation apparatus and beam irradiation method

An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.

Ion implantation apparatus and ion implantation method

During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.

Beam processing apparatus

An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.

A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.

Ion implantation apparatus

An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.

Ion implantation apparatus and method of converging/shaping ion beam used therefor

A beam processing system is for causing a particle beam extracted from a beam generating source to pass through a mass analysis magnet device, a mass analysis slit, and a deflection scanner in the order named, thereby irradiating the particle beam onto a processing object. The mass analysis slit is installed between the mass analysis magnet device and the deflection scanner at a position where the particle beam having passed through the mass analysis magnet device converges most in a lateral direction. A first DC quadrupole electromagnet and a second DC quadrupole electromagnet are installed on an upstream side and a downstream side of the mass analysis slit, respectively.

Beam processing system and beam processing method

A beam deflection scanner performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes, while a correction voltage is constantly applied to the pair of correction electrodes. A correction electric field produced by the pair of correction electrodes is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes at the time of switching between the positive and negative potentials.

Electrostatic beam deflection scanner and beam deflection scanning method

Embodiments of the invention are directed to a method of controlling a mover device The method includes generating a moving force from a moving force generating unit to move a processing base with respect to a movable base, thereby moving the processing base with respect to a fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base. The method further includes controlling the moving velocity of the processing base with respect to the fixed base.

Method of controlling mover device

The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

Irradiation system ion beam and method to enhance accuracy of irradiation

A beam processing system comprises a rotary disk mounted thereon with processing objects, a controller for controlling a reciprocating drive mechanism, and a beam width measuring unit for measuring a beam width of a processing beam. The controller sets an inner and an outer overscan position depending on a measured value of the beam width. The controller, based on the number of rotation of the rotary disk per unit time, a scan speed and the number of reciprocating scan times, a reversal start timing of the rotary disk at at least one of the inner and the outer overscan positions, and the measured value, controls the reciprocating drive mechanism so as to ensure an overlap region between a last and a current processing beam irradiation region on each of the processing objects, the overlap region overlapping at least half of the last processing beam irradiation region.

A method to increase low-energy beam current according to this invention is applied to an irradiation system with ion beam comprising a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. The beam transformer comprises a vertically focusing DC quadrupole electromagnet QD and a longitudinally focusing DC quadrupole electromagnet QF. The beam transformer transforms a beam having a circular cross-section or an elliptical or oval cross-section to the beam has an elliptical or oval cross-section that is long in the scan direction in all the region of a beam line after deflection for scanning.

Method to increase low-energy beam current in irradiation system with ion beam

An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. According to this invention, a hybrid angular energy filter generating both electric and magnetic fields to bend trajectories is provided as the energy filtering device. A pair of multi-surface energy slit units each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.

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Ehime, Japan

Mitsukuni Tsukihara