Shin-etsu Chemical Co., Ltd.

Mitsuhito Takahashi

Takenori Watabe

Hiroyuki Otsuka

Toshio Ohba

Yoshihiro Nojima

Shintarou Tsukigata

Takashi Murakami

Hiroshi Hashigami

Ryo Mitta

Shigeru Konishi

Nobuo Kawada

Shun Moriyama

Yoko Endo

Norifumi Takahashi

A method for producing rare earth carbonate fine particles, including, forming a reaction solution in which an alkyldimethylamine oxide compound having a structure represented by the following formula (1) or a methylmorpholine oxide compound is added to an aqueous solution containing rare earth ion and an excess amount of urea with respect to the rare earth ion, such that the compound is added in an addition amount of 10 to 200 mol % relative to the rare earth ion, and subjecting the reaction solution to hydrothermal treatment to produce rare earth carbonate fine particles. This provides a method for producing rare earth carbonate fine particles of submicron or less and having excellent dispersibility. wherein R represents an alkyl group of C1 to C14.

Method for producing rare earth carbonate fine particles and a rare earth carbonate fine particle

A polishing agent for a synthetic quartz glass substrate contains polishing particles and water. The polishing particles are composite oxide particles of cerium and yttrium. A content by percent of the cerium in the polishing particles is 71 mol % or more and 79 mol % or less. This provides a polishing agent for a synthetic quartz glass substrate, the polishing agent being capable of sufficiently reducing generation of defects on the surface of the synthetic quartz glass substrate due to polishing without decreasing the polishing rate.

Polishing agent for synthetic quartz glass substrate, method for manufacturing the polishing agent, and method for polishing synthetic quartz glass substrate

A polishing agent for a synthetic quartz glass substrate including at least: polishing particles; and water, wherein the polishing particles contain: composite oxide particles of cerium and yttrium; and composite amorphous particles of cerium and yttrium, and the composite oxide particles of cerium and yttrium have an average primary particle diameter of 30 nm or more and 80 nm or less, and the composite amorphous particles of cerium and yttrium have an average primary particle diameter of 100 nm or more and 300 nm or less.

Polishing agent for synthetic quartz glass substrate and producing method for polishing agent, and method for polishing synthetic quartz glass substrate

A polishing agent for a synthetic quartz glass substrate. The polishing agent contains wet ceria particles and non-spherical silica particles. The wet ceria particles have an average primary particle diameter of 30 nm to 50 nm. The non-spherical silica particles have an average primary particle diameter of 80 nm to 120 nm. This provides a polishing agent for a synthetic quartz glass substrate, the polishing agent having high polishing rate and being capable of sufficiently reducing generation of defects due to polishing.

Polishing agent for synthetic quartz glass substrate and method for polishing synthetic quartz glass substrate

The present invention is polishing particles for polishing a synthetic quartz glass substrate. The polishing particles contain cerium-based polishing particles and have a breaking strength, which is measured by a compression tester, of 30 MPa or more. This provides polishing particles for polishing a synthetic quartz glass substrate while sufficiently reducing generation of defects due to polishing.

Method for manufacturing polishing particles and method for polishing synthetic quartz glass substrate

The present invention is a polishing composition, containing zirconium oxide as abrasive grains, the polishing composition having pH of 11.0 or more and less than 12.5, the zirconium oxide having element concentrations of sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, iron, manganese, nickel, copper, zinc, lead, and cobalt of less than 1 ppm each. There can be provided a polishing composition that enables semiconductor substrates having high flatness not only in the inner circumferential portion but also in the outer circumferential portion with little contamination due to metal impurities to be obtained at high productivity.

Polishing composition, method for producing same, and polishing method

A polishing agent for a synthetic quartz glass substrate, containing polishing particles and water includes ceria particles as base particles, and composite oxide particles of cerium and at least one rare earth element selected from trivalent rare earth elements other than cerium are supported on surfaces of the base particles. This provides a polishing agent for a synthetic quartz glass substrate, the polishing agent having high polishing rate and being capable of sufficiently reducing generation of defects due to polishing.

The present invention is a polishing agent for a synthetic quartz glass substrate, containing polishing abrasive grains, a polishing accelerator, and water, wherein the polishing abrasive grains are wet ceria particles, and the polishing accelerator is a polyphosphoric acid, a salt thereof, a metaphosphoric acid, a salt thereof, a tungstic acid, or a salt thereof. There can be provided a polishing agent for a synthetic quartz glass substrate that has high polishing rate and can sufficiently reduce generation of defects due to polishing.

The present invention provides a CMP polishing agent containing polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group. This provides a CMP polishing agent which can reduce polishing scratches produced due to polishing in a CMP process and has high polishing selectivity.

CMP polishing agent, manufacturing method thereof, and method for polishing substrate

The present invention is a CMP polishing agent, including polishing particles, a protective film-forming agent, and water, wherein the protective film-forming agent is a copolymer of styrene and acrylonitrile, and an average molecular weight of the copolymer is 500 or more and 20000 or less. This provides a polishing agent which can polish an insulation film with few polishing scratches and has high polishing selectivity of an insulation film to a polishing stop film in a CMP step, a method for manufacturing the polishing agent, and a method for polishing a substrate by using the polishing agent.

CMP polishing agent, method for manufacturing thereof, and method for polishing substrate

A solar cell wherein: an emitter layer is formed on a light-receiving-surface side of a crystalline silicon substrate, with a dopant of the opposite conductivity type from the silicon substrate added to said emitter layer; a passivation film is formed on the surface of the silicon substrate; and an extraction electrode and a collector electrode are formed. Said extraction electrode extracts photogenerated charge from the silicon substrate, and said collector electrode contacts the extraction electrode at least partially and collects the charge collected at the extraction electrode. The extraction electrode contains a first electrode that consists of a sintered conductive paste containing a dopant that makes silicon conductive. Said first electrode, at least, is formed so as to pass through the abovementioned passivation layer. The collection electrode contains a second electrode that has a higher conductivity than the aforementioned first electrode. This invention reduces contact-resistance losses between the silicon and the electrodes, resistance losses due to electrode resistance, and optical and electrical losses in the emitter layer, thereby greatly improving the characteristics of the solar cell.

Solar cell and solar-cell module

This solar cell production method involves productively forming an antireflection film comprising silicon nitride, said antireflection film having an excellent passivation effect. In an embodiment, a remote plasma CVD is used to form a first silicon nitride film on a semiconductor substrate () using the plasma flow from a first plasma chamber (), then to form a second silicon nitride film, which has a different composition than the first silicon nitride film, using the plasma flow from a second plasma chamber (), into which ammonia gas and silane gas have been introduced at a different flow ratio than that of the first plasma chamber (). The plasma chambers () have excitation parts () that excite the ammonia gas, and activation reaction parts () and a flow controller ().

Solar cell production method, and solar cell produced by same production method

Disclosed is a solar cell having a silicon monocrystal substrate surface with a textured structure and, near the surface of said substrate, a damage layer reflecting the slice processing history from the time of manufacture of the silicon monocrystal substrate. The damage layer near the surface of the silicon monocrystal substrate is derived from the slice processing history at the time of manufacture of the substrate and functions as a gettering site, contributing to a longer lifetime of the substrate minority carriers. Thanks to this effect, the solar cell characteristics are dramatically increased. Further, new damage need be inflicted, and no additional work is required because damage from the slicing is used.

Solar cell and manufacturing method thereof

Disclosed in a method that is for producing a solar cell and that is characterized by performing an annealing step on a semiconductor substrate before an electrode-forming step. By means of performing annealing in the above manner, it is possible to improve the electrical characteristics of the solar cell without negatively impacting reliability or outward appearance. As a result, the method can be widely used in methods for producing solar cells having high reliability and electrical characteristics.

Method for producing solar cell and film-producing device

Disclosed is a method for producing an electrolyte membrane for fuel cells, which is characterized in that a radically polymerizable monomer is graft-polymerized to a resin without using a photopolymerization initiator by bringing the radically polymerizable monomer into contact with the resin after irradiating the resin with ultraviolet light. The electrolyte membrane for fuel cells obtained by ultraviolet irradiation graft polymerization has both excellent oxidation resistance and excellent mechanical characteristics. By using such an electrolyte membrane, there can be obtained a fuel cell exhibiting extremely high performance.

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Annaka, Japan

Mitsuhito Takahashi