Toyota Gosei Co., Ltd.

Mitsuhisa Narukawa

Koji Okuno

Tetsuya Taki

Masato Aoki

Kazuki Nishijima

Yusuke Toyoda

Shuhei Yamada

A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.

Growing community of inventors

Aichi-ken, Japan

Mitsuhisa Narukawa