Tokyo Electron Limited

Mitsubishi Jidosha Kogyo Kabushiki Kaisha

Tokyo Hy-power Labs, Inc.

Mitsubishi Jidosha Kogyo K.k.

Mitsuhiro Yuasa

Satoru Kawakami

Toshiaki Hongoh

Yuji Sato

Akihiro Tsuchiya

Kensuke Kondo

Shinji Himori

Shigemi Murakawa

Koji Homma

Tetsu Oosawa

Kazuyoshi Watanabe

Keiichi Enjoji

Jun'ichi Shimada

The engine controlling apparatus includes a selector, a setter, and a controller. The selector selects one of a plurality of injection modes according to the operating condition of an engine, where injection rates of a plurality of injectors or the number of injections performed in one stroke of the engine differs among the injection modes. The setter sets a mode correction amount that reflects an output characteristic of a first sensor corresponding to the injection mode. The controller performs feedback control using both a detection signal from the first sensor and the mode correction amount.

Engine controlling apparatus

The engine controlling apparatus includes a selector and a changer. The selector selects one of a plurality of injection modes according to the operating condition of an engine, where injection rates of a plurality of injectors differ among the injection modes. The changer changes a map specifying a reference value of a detection signal detected by a first sensor according to the injection mode.

A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor.

Process monitoring apparatus and method for monitoring process

Process monitor and system for producing semiconductor

A wafer supporting unit () includes a base () and a thermally conductive member (). The base is formed by nickel material. The thermally conductive member is formed in the shape of a lamina, includes silicone rubber () serving as the main material, and Ag fine powder () is blended with the silicone rubber. The Ag fine powder is blended with high density in part of the thermally conductive member, and a plurality of pillar-shaped regions () is formed with one end facing the bottom, and with the other end facing the top. The wafer supporting unit does not produce curvature in a wafer, and provides efficient cooling of the wafer, and does not cause heat degradation in a thermally conductive member prepared on the rear side of the wafer during processing.

Wafer supporter

The invention is aimed at preventing apparatus damage, loss of data, accidental firing of a firearm due to dropping or subjection to an impact, and other mishaps caused by accidental dropping or improper handling of the apparatus, firearm, etc. due to carelessness on the side of users. To achieve this, a drop detecting means is provided that detects the dropping of the apparatus when the apparatus is dropped, and control is performed so as to set the apparatus in a safe condition in response to a drop detection signal supplied by the drop detecting means.

Drop detection device or abnormality detection device and portable apparatus equipped with said device

There are provided a matching unit capable of sufficiently matching the impedance of a high frequency load to a transmission path impedance without increasing its size and matching time even if a high frequency power of 70 MHz or higher is supplied thereto, and a plasma processing system using the same. A matching unitcomprises: a resonance rodfor transmitting a high frequency energy from a high frequency power supplyto a plasma producing electrode; a variable capacitor, connected to the resonance rodand an electrodein series, for adjusting the imaginary part of an impedance complex number; a housingwhich is provided outside of the resonance rodand which is grounded; a link coilfor exciting a high frequency energy to the resonance rodand for adjusting the real part of the impedance complex number; and a controllerfor controlling a driving part for the variable capacitorand the link coilso that a series resonance circuit is formed between the high frequency power supplyand the ground via plasma in a matching state.

Matching unit and plasma processing system

In a state where a process gas including SF.sub. 6 and O.sub. 2 is supplied in a chamber, a laser light irradiator provided outside the chamber irradiates a laser light onto a substrate. At the portion of the substrate onto which the laser light is irradiated, the material that makes up the substrate is excited and converted into a gaseous substance by reacting with the process gas. The temperature of the substrate placed on a stage is kept at a predetermined temperature since a temperature adjuster supplies a chiller to a coolant flow passage provided inside the stage.

Substrate processing device and processing method

A resonant frequency sensor is disposed in a plasma-processing chamber included in a semiconductor fabricating apparatus. A change in the resonant frequency caused by etching, sputtering or deposition is sensed in order to detect the timing of performing the maintenance of the processing chamber. If data representing the relationship between an amount of etching or deposition occurring at a predetermined position in the processing chamber and occurrence of an abnormality is produced in advance, an optimal maintenance timing can be determined.

Semiconductor fabricating apparatus

This invention provides a method of manufacturing mask for electron beam lithography and a mask blank for electron beam lithography, which could prevent damage upon a front side of an SOI (Silicon On Insulator) layer and also provide desirable etching of a silicon base layer of an SOI substrate is used. A mask blank for electron beam lithography is manufactured as an intermediary product by etching a silicon base layer and a BOX layer subsequent to forming a protective layer on a front side of an SOI (Silicon On Insulator) layer simultaneously with forming a hard mask on a back side of the SOI layer. Then, an etching process is performed upon the SOI layer to thereby complete a manufacture process of a mask for electron beam lithography having an aperture for transmitting an electron beam therethrough.

Method of manufacturing mask for electron beam lithography and mask blank for electron beam lithography

A plasma processing apparatus processing a surface of a substrate by spraying a process gas in a plasma state from a gas spray opening of a spray nozzle onto the substrate includes: an exhaust opening for exhausting residual gas generated at the time of processing the surface of the substrate, the exhaust opening being provided at a position close to the periphery of the gas spray opening; and an air jet opening generating airflow, the air jet opening being provided surrounding the exhaust opening so as to prevent the residual gas from flowing out.

Plasma processing apparatus

In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film of a thickness of 1 nm or less in terms of oxide film. A manufacturing method to and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Semiconductor manufacturing apparatus

In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film of a thickness of 1 nm or less in terms of oxide film. A manufacturing method and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Semiconductor manufacturing method and semiconductor manufacturing apparatus

A microwave plasma processing apparatus has a process chamber in which an object to be processed is subjected to plasma processing under a predetermined negative pressure environment. A susceptor holding the object thereon is provided in the process chamber. The susceptor is moved by a susceptor moving member which is moved by a susceptor moving mechanism located outside the process chamber. The susceptor moving member extends from the process chamber via a bellows provided to a bottom of the process chamber. The bellows allows a vertical movement of the susceptor moving member while providing a hermetic seal to the process chamber to maintain the predetermined negative pressure environment in the process chamber. A vacuum pump is provided to the bottom of the process chamber so that an inlet opening of the vacuum pump aligns with the susceptor in the vertical direction.

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Tokyo, Japan

Mitsuhiro Yuasa