Ablic Inc.

Mitsuhiro Yoshimura

Masahiro Hatakenaka

A semiconductor device includes a semiconductor substrate, a trench provided in the semiconductor substrate, a trench gate formed in the trench, a vertical transistor having the trench gate, an active region having the vertical transistor, a field region surrounding the active region and having a protection diode, and a field insulating film formed on a surface of the semiconductor substrate, the protection diode being formed on the field insulating film. The trench gate includes a first polysilicon layer and has an embedded part embedded in the trench and an extension part connected to the embedded part and extending onto the surface of the semiconductor substrate, the protection diode includes a second polysilicon layer thicker than the first polysilicon layer, and an overlapping part having the second polysilicon layer is formed on the extension part.

Semiconductor device and manufacturing method thereof

A semiconductor device having a first surface formed at a first height and a second surface formed at a second height on a semiconductor substrate includes: a base region formed in the semiconductor substrate; a trench formed from the first surface and the second surface into the semiconductor substrate; a gate insulating film covering an inner side of the trench; a gate electrode embedded to a third height; an insulating film formed on the gate electrode; a first region which has the first surface and in which a base contact region is formed; and a second region which has the second surface and in which a source region is formed, the first region and the second region being alternately arranged in the trench extension direction to prevent a reduction in channel formation density.

Vertical MOSFET having insulated trenches and base region contact

Provided is a semiconductor device, including: a drain region of a first conductivity type and a source region of the first conductivity type in a semiconductor substrate; a base region of a second conductivity type between the drain region and the source region; a base contact region of the second conductivity type in the base region; a gate electrode on the base region through a gate insulating film; a bidirectional diode overlapping with the gate electrode in a first direction perpendicular to the semiconductor substrate, and having one end electrically connected to the gate electrode and the other end electrically connected to the source region; a source metal layer electrically connected to the source region, the base contact region, and the other end of the bidirectional diode; and a gate metal layer electrically connected to the gate electrode, and overlapping with the source metal layer in the first direction.

Semiconductor device with bidirectional diode

A semiconductor device in which a trench in a cell outer peripheral region configured to pull out a gate electrode and a trench in a cell region having a vertical transistor are formed with the same width to enable a reduction in chip area, and a manufacturing method thereof in which a gate contact hole is formed directly on a trench in a cell outer peripheral region on a self-alignment basis, and a gate wiring electrode is connected thereto are provided.

To obtain a semiconductor device in which a reduction in channel formation density in a trench extending direction is suppressed, provided is a semiconductor device including a first region and a second region alternately arranged in the trench extending direction. The first region includes a first front surface semiconductor electrode layer of a first conductivity type having a portion along an outer side surface of the trench from the front surface of the semiconductor device to the first height to which a gate electrode is embedded into the trench. The second region includes a base contact region having a depth from the front surface of the semiconductor device to the second height higher than the first height and a second front surface semiconductor electrode layer of the first conductivity type from the first height to the second height.

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Chiba, Japan

Mitsuhiro Yoshimura