Canon Kabushiki Kaisha

Mitsuhiro Yomori

Takehito Okabe

Sho Suzuki

Toshihiro Shoyama

Yukinobu Suzuki

Tomoyuki Tezuka

Nobuyuki Endo

Toshiyuki Ogawa

Tsutomu Tange

Nobuaki Kakinuma

Akihiro Kawano

Jun Iwata

Shinji Kodaira

Yasuhiro Sekine

Masaki Kurihara

Mariko Furuta

Yuto Nozaki

Kiyoto Murakumo

Takashi Okagawa

Keita Torii

Takuya Hara

Daichi Seto

Kenji Togo

Masashi Kusukawa

Norihiko Nakata

A display device includes a light emitting layer and color filter arrays. The color filter arrays comprise a first color filter array of a first color, and a second color filter array of a second color. The first color filter array comprises a first pair of color filters adjacent to each other with a first clearance therebetween and a second pair of color filters adjacent to each other with a second clearance therebetween. The second color filter array comprises a first color filter positioned between the first pair of color filters and a second color filter positioned between the second pair of color filters. A width of the first clearance is larger than a width of the second clearance. A width of the first color filter is larger than a width of the second color filter. The second color filter partially overlaps with the second pair of color filters.

Method for forming color filter array and method for manufacturing electronic device

Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.

Photoelectric conversion apparatus and equipment including the same

A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.

Photoelectric conversion apparatus, equipment including photoelectric conversion apparatus, and manufacturing method of photoelectric conversion apparatus

Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.

Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region

A method for forming a color filter array includes the step of forming a first color filter array by forming a first color filter film on a surface of a base member using a coating method and by patterning the first color filter film and the step of forming a second color filter array by forming a second color filter film on the surface so as to cover the first color filter array using a coating method and by patterning the second color filter film. The color filters in the first color filter array are uneven in the width of the clearance between the color filters and/or the widths of the color filters.

A method of manufacturing a photoelectric conversion apparatus includes heating a semiconductor substrate while a pixel circuit area is covered with an insulator film, performing ion implantation into the pixel circuit area through the insulator film, performing ion implantation into a peripheral circuit area after the heating, and forming a side wall on a side surface of a gate electrode of a transistor after the performing ion implantation into the peripheral circuit area.

Method of manufacturing photoelectric conversion apparatus using ion implantation

Photoelectric conversion apparatus including silicon oxide film and silicon nitride layers, equipment including photoelectric conversion apparatus, and manufacturing method of photoelectric conversion apparatus

A semiconductor apparatus includes a conductive member including a polycrystalline silicon layer having a first, second and third portions, an interlayer insulation film that covers the conductive member, a first silicon nitride layer arranged between the interlayer insulation film and the third portion, a second silicon nitride layer arranged between the interlayer insulation film and the first portion and between the interlayer insulation layer and the second portion, a first contact plug disposed above the first portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member, and a second contact plug disposed above the second portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member. The first silicon nitride layer is disposed between the first and second contact plugs, and apart from the first and second contact plugs.

Semiconductor apparatus and equipment

A microlens forming method, comprising etching a first member and a second member arranged on the first member, the second member including a concavo-convex shape, and forming a microlens from the first member, wherein, the etching of the first and the second members is performed under a condition that an etching rate of the first member is higher than that of the second member, a portion of the first member under the concave portion is exposed during the etching of the second member, and the exposed portion of the first member is removed in the etching of the first member.

Microlens forming method and solid-state image sensor manufacturing method

A semiconductor device includes a microlens provided in a pixel area and a monitoring structure provided in a peripheral area that is separate from the pixel area. The monitoring structure has a shape correlated with a shape of the microlens. A shape of a section of the monitoring structure in a plane perpendicular to a substrate is constant.

Growing community of inventors

Tama, Japan

Mitsuhiro Yomori