Seiko Epson Corporation

Mitsuhiro Yamamura

Toshiyuki Kamiya

Noboru Asauchi

Hideaki Oka

Hajime Kobayashi

Yasunaga Miyazawa

Takafumi Noda

Jun Takizawa

Takao Miyazawa

Kenya Watanabe

Taketomi Kamikawa

Toshioki Shimojima

Yusaku Nakamura

Michiko Kawaji

A workpiece processing method includes a carry-in step of carrying a workpiece into the field of view of a magnifier, a work step of performing predetermined work on the workpiece based on an image provided via the magnifier, and a carry-out step of carrying the workpiece out of the field of view of the magnifier. A robot performs at least one of the carry-in step and the carry-out step as well as the work step.

Workpiece processing method

A method for driving a hand includes: detecting a relative position of a first finger part and a second finger part as of when the first finger part and the second finger part pinch a target object therebetween, as a reference relative position, by a position detection unit; moving the relative position of the first finger part and the second finger part to a target relative position where the first finger part and the second finger part are spaced further apart from each other than at the reference relative position by an amplitude of vibration or more, by a drive unit, on accepting an instruction to release the target object pinched by the first finger part and the second finger part; and causing at least one of the first finger part and the second finger part to vibrate by the drive unit, when the target relative position is achieved.

Method for driving hand, and hand

A robot includes a robot body including a base, a first movable section provided turnably with respect to the base, and a second movable section provided turnably with respect to the first movable section, a first proximity sensor for detecting contact with or approach of an object to the first movable section, and a second proximity sensor for detecting contact with or approach of the object to the second movable section. The first proximity sensor includes a first electrode section having a capacitance that changes according to the contact or approach of the object, and a first circuit section for detecting the capacitance of the first electrode section. The second proximity sensor includes a second electrode section having a capacitance that changes according to the contact or approach of the object, and a second circuit section for detecting the capacitance of the second electrode section.

Robot

A robot includes a sensor including an electrode portion of a sensor for detecting approach of or contact with another object is formed on an outer surface or an inner surface of an exterior member, and in which a drive unit of the robot main body is controlled so as to avoid approach between the robot body and the other object based on an output signal of the sensor.

Sensor and robot

A force detection device includes: a force sensor that has a piezoelectric element receiving a force and outputting a charge; a pre-compression unit that pre-compresses the force sensor; and a conversion output circuit that receives the charge from the force sensor and outputs a voltage. The pre-compression unit is short-circuited with a first ground of the conversion output circuit. The pre-compression unit has the same potential as the first ground. The force detection device includes a casing that accommodates the force sensor and the conversion output circuit. The casing is short-circuited with a second ground.

Force detection device and robot having a voltage generating circuit

A detection circuit includes a pyroelectric element, an amplifier circuit, a first switching element and a second switching element. The amplifier circuit includes a transistor in which a detection signal from the pyroelectric element is inputted to a gate. The first switching element interrupts an electric current that flows into the transistor. The second switching element interrupts a connection between the pyroelectric element and the gate of the transistor.

Detection circuit, sensor device and electronic apparatus

A sensor device includes a plurality of row lines WL, a plurality of column lines DL, a plurality of reset lines RL, a plurality of pixel circuits that connect to each one of the plurality of row lines, the plurality of column lines and the plurality of reset lines, and an amplifier circuit. The plurality of pixel circuits respectively includes a pyroelectric element, a reset switch that is driven by the plurality of reset lines and discharges an electric charge of the pyroelectric element, and a pixel selection switch that is driven by the plurality of row lines and outputs a signal, which is based on a change of the electric charge of the pyroelectric element by a discharge, to one of the column lines. The signal based on the change of the electric charge of the pyroelectric element by the discharge is amplified in the amplifier circuit.

Sensor device and electronic apparatus

Detection circuits include a pyroelectric element, source follower circuits that include transistors TN, TPin which a detection signal SD from the pyroelectric element is inputted to a gate, first switching elements that interrupt an electric current that flows in the transistors, and a second switching element that interrupts between the pyroelectric element and the gate of the transistor. The second switching element can interrupts a connection between the pyroelectric element and the gate of the transistor before the first switching elements interrupt the electric current that flows in the transistors TN, TP

A detection circuit includes a pyroelectric element; a first P-type transistor provided between an output node and a low-potential-side power node of the detection circuit, a detection signal being inputted from the pyroelectric element to a gate of the first P-type transistor; and a second P-type transistor provided between a high-potential-side power node and the output node, a gate of the second P-type transistor being set to a reference voltage.

Detection circuit, sensor device, and electronic apparatus

A detection circuit includes a current mirror circuit, a pyroelectric element, a capacitor element and a charging circuit. The pyroelectric element is disposed between a first power supply node and a first node connected to the current mirror circuit. The capacitor element is disposed between the first power supply node and a second node connected to the current mirror circuit. The charging circuit is connected to the current mirror circuit to charge the pyroelectric element and the capacitor element though the current mirror circuit.

Detection circuit, sensor device, and electronic instrument

A thermal detector has a thermal detection element in which a physical characteristic changes based on temperature, a light-absorbing member configured and arranged to collect heat and transmit collected heat to the thermal detection element, a support member mounting the thermal detection element on a first side with a second surface facing a cavity, and a support part supporting a portion of the support member. The light-absorbing member is a plate shaped member at least partially contacting a top part of the thermal detection element and having a portion overhanging to an outside from the top part of the thermal detection element in plan view.

Thermal detector, thermal detection device, and electronic instrument

A method for driving a ferroelectric memory device having a plurality of memory cells that store data and a memory cell for flag is provided. The method includes, upon writing to the plurality of memory cells, the steps of: reading data from the plurality of memory cells and the memory cell for flag; judging as to whether the data readout from the memory cell for flag is specified data; overwriting write data to the plurality of memory cells, and writing reverse data of the specified data to the memory cell for flag, when the data readout from the memory cell for flag is the specified data; and rewriting the data readout from the plurality of memory cells to the plurality of memory cells, and writing the reverse data to the memory cell for flag, when the data readout from the memory cell for flag is the reverse data.

Method for driving ferroelectric memory device, ferroelectric memory device, and electronic equipment

A ferroelectric memory device includes: a plurality of bit lines; a plurality of memory cells connected to each of the plurality of bit lines, and each storing '0' data with a smaller amount of readout charge or '1' data with a greater amount of readout charge according to a polarization state; a plurality of data lines; a plurality of charge transfer circuits that connect the plurality of bit lines to the plurality of data lines, respectively, based on a potential on each of the bit lines; a capacitor connected to each of the plurality of data lines for storing negative charge; a positive charge canceling circuit that pulls out positive charge corresponding to the amount of &#x201c;0&#x201d; data readout charge from each of the plurality of bit lines; and a sense amplifier that judges data read out from the memory cells.

Ferroelectric memory device, its driving method and electronic apparatus

A ferroelectric memory array includes a plurality of bit lines; a plurality of memory cells connected to the bit lines and storing predetermined data; and a plurality of sense amplifiers provided in correspondence with the bit lines and amplifying data that are read out from the memory cells. The sense amplifiers each include a first n-MOS transistor, a first voltage being supplied to a source of the first n-MOS transistor; a first precharge unit precharging a drain of the first n-MOS transistor to a second voltage, which is a positive voltage that is higher than the first voltage; a transistor control unit that lowers the drain voltage that has been precharged to the second voltage by controlling a resistance between the source and the drain of the first n-MOS transistor in accordance with a voltage on a corresponding bit line, when data stored in the memory cells is read out to that bit line; and a voltage control unit that lowers the voltage of the bit line in accordance with the lowering of the voltage of the drain.

Ferroelectric memory device

A ferroelectric memory device including: a plurality of bit lines; a plurality of memory cells, which are connected to the bit lines, and which store prescribed data; and a sense amplifier, which is connected to a bit line, wherein the sense amplifier includes an op amp, a MOS transistor, and a capacitor, and a first input unit of the op amp is connected to a bit line, a second input unit is connected to a first voltage, an output unit is connected to a gate electrode of the MOS transistor, the MOS transistor is connected between a first node and a second voltage that is lower than the voltage of the first node, and the capacitor is connected between the first node and the bit line.

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Suwa, Japan

Mitsuhiro Yamamura