Olympus Corporation

Mitsuhiro Tsukimura

Yuichi Gomi

Yoshitaka Tadaki

Haruhisa Saito

Yoshiaki Takemoto

Naohiro Takazawa

Hiroshi Kikuchi

Jun Aoki

A semiconductor device includes a first substrate, a second substrate, a connection part, and an alignment mark. The connection part includes a first electrode which is disposed on the first substrate, a second electrode which is disposed on the second substrate, and a connection bump which connects the first electrode and the second electrode. The alignment mark includes a first mark which is disposed on the first substrate and a second mark which is disposed on the second substrate. A sum of a height of the first mark and a height of the second mark is substantially equal to a sum of a height of the first electrode, a height of the second electrode, and a height of the connection bump.

Semiconductor device, solid-state imaging device, and imaging device

A plurality of first pixels Pcorresponding to color filters of two or more colors constitute a pixel group. A plurality of the pixel groups are arranged so that each of the pixel groups corresponds to one of second pixels P. The light which is transmitted through the color filters enters first photoelectric conversion units of the first pixels Pcorresponding to the color filters. The light which is transmitted through the pixel group enters a second photoelectric conversion unit of the second pixel Pcorresponding to the pixel group. The number of colors of the color filters corresponding to the plurality of first pixels Pthat constitute the pixel group, and the number of the first pixels Pcorresponding to each color are equal to each other among the plurality of pixel groups.

Solid-state imaging device

A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

Solid-state imaging device, imaging apparatus, substrate, semiconductor device and method of manufacturing the solid-state imaging device

In a solid-state imaging apparatus in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via a connection portion configured to electrically connect the first and second substrates, the first substrate includes a first pixel region in which a plurality of first photoelectric conversion elements partially transmit incident light and are arranged in a two-dimensional shape. The second substrate includes a second pixel region in which a plurality of second photoelectric conversion elements are arranged in a two-dimensional shape in at least a partial region of a region corresponding to the first pixel region. The first photoelectric conversion elements generate imaging signals, and the second photoelectric conversion elements generate signals to be used in imaging preparation.

Solid-state imaging element having substrates formed on semiconductor wafers and solid-state imaging apparatus having the same solid-state imaging element

A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are electrically connected to each other in a state in which a first connection surface of the first semiconductor substrate and a second connection surface of the second semiconductor substrate face each other. A concave portion is formed in at least one of the first connection surface and the second connection surface. An electrode, which is electrically connected to a portion of wirings included in a wiring layer provided in the first semiconductor substrate or the second semiconductor substrate in which the concave portion is formed and is capable of being electrically connected to an outside, is formed in an inside of the concave portion.

Semiconductor device, imaging device, method of inspecting semiconductor substrate, and method of fabricating semiconductor device

An encapsulated endoscope in which exposure amount is controlled at the light source side, and a MOS image sensor is not required to mount a vertical scanning circuit for electronic shutter which is to provide an exposure amount control function. Therefore, since a vertical scanning circuit for electronic shutter is not mounted, the sensor area can be made smaller so that size of the interior of the encapsulated endoscope can be reduced.

Encapsulated endoscope

The present invention relates to solid-state imaging apparatus such as digital camera for outputting video signals, and more particularly relates to a solid-state imaging apparatus in which vertical stripe-like noise and horizontal shading can be corrected.

Solid-state imaging apparatus

A solid-state imaging apparatus, comprising: a pixel section including a matrix having a plurality of pixels, each pixel including photoelectric conversion means, a storage section, transfer means, amplification means, and reset means, on a column basis, an output signal line whose one end is coupled to a constant-current source, and in which the area carrying thereon the matrix of the pixels includes a light-shielding area, a read area, and a transition area disposed between the light-shielding area and the read area; and control means for performing control to keep the potential difference between the one end and the other end of the constant-current source in a range with which the constant-current source can be operated by using the pixel signal to be output to the output signal line at the time of resetting the pixel of the transition area, when outputting the pixel signal corresponding to the incident light from the pixel of the read area.

A solid-state imaging apparatus including a solid-state imaging device having a pixel section having unit pixels for generating imaging signal associated with an object each formed of a first pixel and a second pixel adjacent to the first pixel, a read drive section where one or more pixels of the first and second pixels are respectively treated as a read unit group so as to effect read operation by the read unit group based on a setting signal inputted from an external source, and an output section for generating a difference signal between signals outputted from the first and second pixels to output it as an imaging signal associated with the unit pixel; and a section for interpolating an imaging signal at a predetermined location between the unit pixels based on imaging signals outputted from the difference signal output section.

Solid-state imaging apparatus having a global shutter function, adapted to be capable of suppressing a reduction in resolution

A solid-state imaging apparatus including: a pixel section having two-dimensionally arrayed unit pixels each having a first pixel and a second pixel respectively containing photoelectric conversion devices that are located at positions regarded as the same position at which image is formed by an imaging optical system; a reset control means for simultaneously resetting respectively independently all first pixels and all second pixels of each unit pixel arrayed in the pixel section; a difference signal output means for obtaining a difference signal between signals of the first pixel and of the second pixel; a control section for rendering control such that a reset is effected of signals of all first pixels of the pixel section and, after a desired exposure time, a reset is effected of signals of all second pixels of the pixel section by the reset control means, and then signals of the first pixel and of the second pixel are read out respectively in a simultaneous or substantially simultaneous manner immediately after the reset of signal of all second pixels by the reset control means so as to output a difference signal between these as imaging signal by the difference signal output means; and a characteristic difference correction means for correcting a characteristic difference between the first pixel and the second pixel.

Growing community of inventors

Tokyo, Japan

Mitsuhiro Tsukimura