Tokyo Electron Limited

Mitsuhiro Tomura

Hiroto Ohtake

Akinori Kitamura

Akihiro Kikuchi

Ryohei Takeda

Takashi Tsukamoto

Shinji Higashitsutsumi

A method of cleaning a substrate processing apparatus including a gas supply part configured to eject a process gas via gas passages formed in the gas supply part, and divided into first and second regions corresponding to first and second in-plane positions of a substrate, respectively, includes cleaning a first one of the gas passages corresponding to the first region with the plasma of the process gas by causing a first flow rate of the process gas supplied to the first region to be lower than a second flow rate of the process gas supplied to the second region and cleaning a second one of the gas passages corresponding to the second region with the plasma by causing a third flow rate of the process gas supplied to the first region to be higher than a fourth flow rate of the process gas supplied to the second region.

Method of cleaning substrate processing apparatus

Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage () to 100&#xb0; C. or greater.

Plasma etching method

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Miyagi, Japan

Mitsuhiro Tomura