Oclaro Japan, Inc.

Mitsuhiro Sawada

Atsushi Nakamura

Takeshi Kitatani

Toshihiko Fukamachi

Takashi Shiota

Nozomu Yasuhara

Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.

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Yokohama, Japan

Mitsuhiro Sawada