Denso Corporation

Nippondenso Co., Ltd.

Mitsuhiro Saitou

Hiroyuki Ban

Takashi Nagasaka

Takahisa Koyasu

Koji Numazaki

Yutaka Fukuda

Hirokazu Kasuya

Makio Iida

Nobumasa Ueda

Kan Kinouchi

Yuji Otani

Kouji Numazaki

Hiroshi Fujimoto

Hiroshi Maeda

Hiroshi Imai

Toshio Sakakibara

Norihisa Imaizumi

Kiyoshi Yamamoto

Yoshiaki Nakayama

Sadahiro Akama

Shoichi Okuda

Toshihiro Nagaya

Hajime Ito

Shoji Miura

Shoji Mizuno

Koji Takeuchi

Nobuo Mayumi

Atsushi Kanamori

Shinsuke Oota

Takayuki Sugisaka

Kazuhisa Ikeda

Yukihiro Maeda

Yasuhiro Kitamura

Akio Kojima

Hirokazu Imai

Kengo Oka

Hideki Kabune

Yuji Ootani

Hiroyuki Yamakawa

Tadashi Suzuki

Kenji Kohno

Akitaka Murata

Yutaka Oohashi

Yuji Ontani

Kyoko Nagaoka

An electronic control unit is disclosed. The electronic control unit includes: a resin board; a power device that is surface-mounted on the resin board; a microcomputer that is configured to control the power device; first heat radiation means for radiating heat, the first heat radiation means being disposed on an opposite side of the resin board from the power device; and first heat conduction means for conducting the heat generated by the power device to the first heat radiation means.

Electronic control unit and method of manufacturing the same

An electric device includes: a first electric element; a second electric element capable of flowing large current therethrough so that heat is generated in the second electric element; a heat sink; and a first wiring board and a second wiring board, which are disposed on one side of the heat sink. The large current in the second electric element is larger than that in the first electric element. The first wiring board and the second wiring board are separated each other. The first electric element is disposed on the first wiring board, and the second electric element is disposed on the second wiring board.

Semiconductor device

In an electronic unit with a substrate, a control circuit is mounted on the substrate and is configured to execute an operation related to a load. A package encapsulates the control circuit and the substrate. The package has sides around a periphery of the substrate. At least one input terminal for input of a signal externally sent to the electronic unit is disposed on at least one of the plurality of surfaces. At least one output terminal for output of a control signal for controlling the load is disposed on at least another one of the plurality of surfaces. At least one check terminal for input/output of a signal for checking at least the control circuit is disposed on at least another one of the plurality of surfaces.

Electronic unit with a substrate where an electronic circuit is fabricated

In order to protect semiconductor switching-devices employed in an H bridge circuit against an over-voltage without using a special protection circuit, a control circuit outputs a control signal to a driving circuit for driving the H bridge circuit in order to turn off FETs serving as the semiconductor switching-devices when an over-voltage detection circuit detects the over-voltage applied to the H bridge circuit.

Driving apparatus of H bridge circuit and protection method of the same

A composite integrated circuit is formed by being molded with a mold resin, including a seat member of a lead frame, a substrate attached on the seat member of the lead frame, a heater element, and a temperature-restricted element. Here, the heater element and the temperature-restricted element are mounted on the substrate. The seat member of the lead frame includes a hollow member that is located under an intermediate area between the heater element and the temperature-restricted element.

Composite integrated circuit device having restricted heat conduction

A semiconductor device is provided having a power transistor structure. The power transistor structure includes a plurality of first wells disposed independently at a surface portion of a semiconductor layer; a deep region having a portion disposed in the semiconductor layer between the first wells; a drain electrode connected to respective drain regions in the first wells; a source electrode connected to respective source regions and channel well regions in the first wells, such that either the drain electrode or the source electrode is connected to an inductive load; and a connecting member for supplying the deep region with a source potential, where the connecting member is configurable to connect to the drain electrode when the drain electrode is connected to the inductive load and to connect to the source electrode when the source electrode is connected to said inductive load.

Power MOS transistor for absorbing surge current

Several electronic parts are mounted on several ceramic substrates in a semiconductor device, and are wire bonded to the respective ceramic substrates through bonding wires. The electronic parts and the bonding wires are covered with an enclosing member on every ceramic substrate, and an inside of the enclosing member is filled with silicone gel for sealing. The ceramic substrates are bonded to a radiation fin together, and are mounted on a motherboard perpendicularly to the motherboard.

Semiconductor device including bonded wire based to electronic part and method for manufacturing the same

A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.

Semiconductor device and manufacturing method thereof

The present invention is aimed at avoiding noise generation accompanying switching actions in booster circuits for a load such as an air-bag driving circuit. In an air-bag driving circuit, which is designed to actuate an igniting transistor 13 in response to output of a collision detecting signal from a collision detector 7 for detecting a collision condition of a vehicle so as to supply an igniting current to a squib 11 based on a voltage boosted by booster circuits 4 and 5, the boosting operation of the booster circuits 4 and 5 is inhibited while the collision detecting signal is absent and started when the collision detecting signal is output from the collision detector 7.

Load driving circuit with boosting timing control

A semiconductor device including a semiconductor substrate having a main surface. An insulating film is formed on the main surface of the semiconductor substrate. A semiconductor layer is placed on the insulating film. Side insulating regions extending from a surface of the semiconductor layer to the insulating film divide the semiconductor layer into element regions. The element regions are isolated from each other by the side insulating regions and the insulating film. The semiconductor substrate has a resistivity of 1.5 .OMEGA.cm or lower. A voltage at the semiconductor substrate is set to a given voltage.

Design for a semiconductor device having elements isolated by insulating

An alignment mark for determining a position of a thin film resistor formed on a semiconductor chip. The alignment mark is disposed on a capacitor formation region of the semiconductor chip. Because aluminum wiring members of the semiconductor chip are not disposed adjacent to the alignment mark within the capacitor formation region, the alignment mark can be precisely recognized. As a result, the position of the thin film resistor can be also precisely determined.

Semiconductor device having alignment mark

An operational amplifier charges a charge storage capacitor in response to an input signal supplied to a non-inverting input terminal. When a switching signal is low, NPN transistors disposed in an output open circuit are on. Therefore, output transistors disposed in a push-pull circuit are off and the output signal is cut off. Further, in this situation, the potential of a phase compensation capacitor is held because AC coupling of the phase compensation capacitor does not occur.

Sample-and-hold circuit including operational amplifier as an input

A power supply apparatus is provided for energizing an electronic control unit mounted on a vehicle having a battery and a starter switch. The apparatus includes a coil connected to the power supply line, and a switch which operates for selectively enabling a current to flow through the coil and cutting off the current through the coil. A control circuit operates for selectively changing the switch between an ON state and an OFF state when the starter switch assumes an ON position. The ON and OFF states alternate in accordance with predetermined delays.

Power supply apparatus for electronic control unit in automotive vehicle

A drive circuit for a vehicle occupant safety apparatus includes a device for activating the vehicle occupant safety apparatus. A first transistor is connected in series with the device. A constant-current circuit receives electric energy from a power supply, and feeds a constant current to the device when the first transistor falls into its on state. The constant-current circuit includes a second transistor connected in series with the device. The second transistor includes an N-channel field-effect transistor. A third transistor is connected to the second transistor. The second and third transistors form a current mirror circuit. The third transistor includes an N-channel field-effect transistor. A voltage between a gate and a source of the third transistor is regulated at a constant level. Gate voltages of the second and third transistors are controlled in response to source voltages of the second and third transistors to equalize the source voltages of the second and third transistors.

Drive circuit for vehicle occupant safety apparatus

Growing community of inventors

Obu, Japan

Mitsuhiro Saitou