Kabushiki Kaisha Toshiba

Mitsuhiro Nakao

Atsuko Sakata

Hisashi Kaneko

Masahiko Hasunuma

Hiroshi Toyoda

Toshimitsu Ishikawa

Junya Sagara

Kazunori Hayashi

Toshiaki Komukai

Yukako Tsutsumi

Atsushi Yoshimura

Mitsuyoshi Endo

Masayuki Dohi

Shoko Omizo

Katsuhiro Ishida

Tatsuhiko Shirakawa

Noboru Okane

A bonding method of applying vibrations to a metal unit including copper while pressing the metal unit onto a bonding object to bond the metal unit to the bonding object is provided. The method includes: applying vibrations to the metal unit and bringing the metal unit into contact with the bonding object while applying the vibrations; gradually increasing a pressing load of the metal unit on the bonding object to a first pressing load; and reducing the pressing load to a second pressing load smaller than the first pressing load and gradually increasing an output power of the vibrations from a first output power to a second output power after the pressing load reaches the first pressing load, the first output power being applied during the first pressing load.

Wire bonding method

A wire bonding method involves bonding a wire in order at a first bonding point and a second bonding point; raising a capillary, through which the wire is inserted, on the second bonding point; cutting the wire by closing a clamper provided above the capillary at a time when the capillary has reached a prescribed height; and measuring a load incurred on the wire at a time of cutting of the wire.

Wire bonding apparatus and wire bonding method

An apparatus for manufacturing a semiconductor device, includes: a collet; an alignment stage; and a sheet feeding mechanism. The collet is configured to suck a surface of a semiconductor chip. The surface is on opposite side of a bonding surface to be bonded to a bonding target. The bonding surface is provided with a film-like adhesive layer. The collet includes a heater for heating the adhesive layer. The alignment stage is configured to support the semiconductor chip and to correct position of the semiconductor chip. The sheet feeding mechanism is configured to feed a release sheet onto the alignment stage.

Apparatus and method for manufacturing semiconductor device

First and second wires are formed so that the further away from a semiconductor chip, the greater the distance between the first and second wires. This prevents currents flowing through the first and second wires from cancelling out each other, and further enables a metallic plate to be disposed as far away from the semiconductor chip as possible. In addition, configuring the metallic plate to have a constant width that is wider than the diameters of the first and second wires results in a wide connection range, thereby ensuring connection even when mounting misalignments occur between the wires and the metallic plate.

Antenna device and radio communication device

A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Semiconductor device including an insulating film and insulating pillars and manufacturing method of the semiconductor device

There is here disclosed a semiconductor device comprising a chip-mounting-member having a lead formed on its major surface, the lead having a thin film plated portion which covers a surface of a predetermined portion of the lead, a semiconductor chip having a bump formed on its major surface, and mounted on the chip-mounting-member by electrically connecting the bump to the lead via the plated portion, and an encapsulating-member formed between the semiconductor chip and the chip-mounting-member.

Semiconductor device wherein chips are stacked to have a fine pitch structure

Semiconductor device with improved bonding

Disclosed is a semiconductor device comprising an integrated circuit chip, a first lead having a portion extending substantially in parallel to one side plurality of the chip, and a second lead located adjacent to the first lead. Each of the first and second leads has a recess and a projection continuously. The first lead and second lead are arranged adjacent to each other with the recess and projection of the first lead being in engagement with the projection and recess of the second lead. Bonding wires are bonded on the projection of the first lead and the projection of the second lead. The bonding wires electrically connect the chip to the first lead and also to the second lead.

Semiconductor device with smaller package

In a wire bonding apparatus comprising a torch electrode for melting an end of a metallic thin wire to form a ball thereof, a high voltage detecting circuit for detecting a voltage between the metallic thin wire and the torch electrode in order to output the detected voltage as a voltage signal, a ball diameter calculator, and a ball diameter display device for displaying the ball diameter outputted from the ball diameter calculator, are further provided.

Growing community of inventors

Yokohama, Japan

Mitsuhiro Nakao