Olympus Corporation

Fujitsu Corporation

Adv Antest Corporation

Fujitsu Vlsi Limited

Mitsuhiro Nakano

Hiroshi Yasuda

Tatsuo Nakata

Junichi Kai

Akio Yamada

Hiroshi Hirayama

Atsushi Saito

Toshiyuki Hattori

Yoshihisa Ooae

Yusuke Yamashita

Kenichi Kawakami

Kosuke Takagi

Tatsuro Ohkawa

Takashi Kiuchi

Kazutaka Taki

A microscope apparatus organizes and stores a plurality of types of image information acquired by a plurality of image acquisition methods at different timings. The microscope apparatus includes a time counting unit for counting time, a plurality of different image acquisition units, and a storage unit for storing image information, when acquired by any one of the image acquisition units, and timing information counted by the time counting unit, by having them associated with each other. Even if the image acquisition units acquire different types of image information at different timings, the timing information can be used to call up the image information stored in the storage unit in a chronological order.

Microscope apparatus chronologically storing different types of image information

Simple, high-precision cell tracking is realized. Provided is a method for tracking cells, comprising an image acquisition step (S) of acquiring a plurality of observation images including a plurality of cells in the field of view at certain time intervals; a feature analysis step (S) of analyzing predetermined brightnesses of the individual cells in the observation images acquired in the image acquisition step (S); a grouping step (S) of grouping the cells for each of the observation images on the basis of the brightnesses analyzed in the feature analysis step (S) and a predetermined threshold value for classifying the brightnesses; and an associating step (S) of associating, for each of the groups divided in the grouping step (S), the cells whose morphological features are substantially the same between the observation images acquired at different times.

Method for tracking cells

A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

Multi-column electron beam exposure apparatus and multi-column electron beam exposure method

The invention provides a microscope apparatus, used for identifying the cell phases of a plurality of cells mounted on a stage, including an analysis/observation optical system used for acquiring an observed-image of the cells and a stimulus optical system used for applying an optical stimulus to prescribed cells. Using these optical systems, the cell phases of the cells mounted on the stage are identified, an optical stimulus is applied to the cells, and the state of the cells before and after applying the stimulus is observed.

Microscope apparatus and cell observation method

A scanning microscope includes a source of illumination light; a scanner scanning the illumination light in a two-dimensional direction crossing a light axis; a lens irradiating the illumination light to a sample, and collecting return light from the sample; a focusing position adjuster adjusting a focal position in a light axis direction; and a light detector detecting collected light. A storage section stores the intensity of detected light, and positional information of an irradiating position of the illumination light set by the scanner and the focusing position adjuster. An image processor acquires images parallel to the light axis based on the intensity of return light and the stored positional information, and processes the images to detect a moving distance along a light axis direction of an area of the sample. The focusing position adjuster is controlled to correct a light condensing position of the illumination light.

Scanning microscope for 3-D imaging of a moving specimen

A laser scanning microscope capable of quickly and accurately setting control values of control items for a microscope apparatus is provided. The control items and a time line are displayed along a vertical axis and a horizontal axis, respectively. The laser scanning microscope includes a graphical user interface configured to set the control values of the control items along the time line and a control unit configured to acquire luminance information of a specimen by irradiating the specimen with a laser beam in accordance with the control values set by the graphical user interface.

Laser scanning microscope apparatus

In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.

Charged particle beam exposure method and apparatus

A charged particle beam exposure method which irradiates a charged particle beam on a substrate placed on a stage while continuously moving the stage and deflecting the charged particle beam by main deflector means and sub deflector means. The charged particle beam exposure method includes the steps of calculating stage moving information which describes an optimum expected locus of a stage moving speed with respect to a frame region based on a stage moving speed that enables exposure within each cell region within the frame region, by defining the frame region as being made up of a plurality of cell regions arranged in a moving direction of the stage within a drawable range in which the charged particle beam can be deflected by the main deflector means, and controlling a deflected position of the charged particle beam caused by the main deflector means by variably controlling the stage moving speed based on said stage moving information.

A charged particle beam exposure apparatus is provided with a source for irradiating a charged particle beam on an object which has a position detection mark provided thereon and is carried on a movable stage, a deflection part for deflecting the charged particle beam based on deflection signals, a first detection part for detecting the position detection mark of the object, a second detection part for detecting a stage position of the object and for outputting a position detection signal, a moving part for moving the stage which carries the object, and a control unit for controlling inputs and outputs of the source, the deflection part, the first and second detection parts and the moving part. The control unit corrects the deflection signals which are supplied to the deflection part so that the position detection mark is irradiated by the charged particle beam based on the position detection signal which is output from the second detection part and is related to the stage position of the object which is continuously moved by the moving part.

Correction of charged particle beam exposure deflection by detecting

A charged particle beam exposure method is used to draw a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam. The method includes moving the stage in a direction parallel to an axis of a coordinate system of the substrate; generating first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of an reference position of a pattern region including the pattern to be drawn relative to a target position of the stage, and for obtaining second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern to be drawn from the reference position of the pattern region to which the pattern belongs; carrying out with respect to first deflection data D.sub.1 a first correcting operation including correction of pattern distortion inherent to a charged particle beam exposure apparatus, and for carrying out the first correcting operation and a second correcting operation with respect to second deflection data D.sub.2 after making a coordinate conversion to the coordinate system of the stage, where second correcting operation corrects a rotation error component relative to the stage caused by movement of the substrate; obtaining third deflection data D.sub.3 ' which describes a position coordinate of the pattern to be drawn from the present position of the stage by adding corrected first deflection data D.sub.1 ' and corrected second deflection data D.sub.2 '; and controlling a deflector based on third deflection data D.sub.3 '.

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Tokyo, Japan

Mitsuhiro Nakano