Fujitsu Corporation

Technical Research & Development Institute Ministry of Defense of Japan

Mitsuhiro Nagashima

Hironori Nishino

Yusuke Matsukura

Yasuhito Uchiyama

Michiya Kibe

Hiroyasu Yamashita

Minoru Doshida

Toshihiro Okamura

An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer, and an upper electrode layerformed over the infrared absorption layer. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.

Optical semiconductor device with quantum dots having configurational anisotropy

An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

Infrared photodetector

Growing community of inventors

Suginama, Japan

Mitsuhiro Nagashima