Hitachi High-tech Corporation

Mitsuhiro Jomura

Michikazu Morimoto

Takayuki Tokunaga

A plasma processing apparatus including a processing chamber; a first radio frequency power supply configured to supply, to a sample stage on which the sample is placed, a first radio frequency power; a second radio frequency power supply configured to supply, to the sample stage, a second radio frequency power having a frequency higher than a frequency of the first radio frequency power; and a control device configured to control the first radio frequency power supply and the second radio frequency power supply such that the supply of one radio frequency power is stopped while the other radio frequency power is supplied, in which the frequency of the first radio frequency power and the frequency of the second radio frequency power are defined based on a half-value width of a peak value of an ion energy distribution with respect to the frequency.

Growing community of inventors

Tokyo, Japan

Mitsuhiro Jomura