Toyoda Gosei Co., Ltd.

Sumita Optical Glass, Inc.

Tsuchiya Co., Ltd.

Mitsuhiro Inoue

Hideaki Kato

Yoshinobu Suehiro

Naruhito Sawanobori

Kazuya Aida

Satoshi Wada

Koichi Ota

Yoshinori Yamamoto

Hiroki Watanabe

Kunihiro Hadame

Masaaki Ohtsuka

Ryoichi Tohmon

Kenji Ito

Naoki Shibata

Jun Ito

Masanobu Senda

Hiroaki Hayashi

Toshimasa Hayashi

Tetsu Kachi

Takahiro Kozawa

Satoru Kato

Tadashi Ichikawa

Kazuki Nishijima

Tatsuya Takashima

Akio Namiki

Tohru Terajima

Takao Haruna

Kazuyohi Tomita

Kazuyoshi Tahashi

A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.

Solid element device and method for manufacturing the same

A solid element device includes a solid element, an electric power receiving and supplying part for receiving electric power from and supplying the electric power to the solid element, and an inorganic sealing material for sealing the solid element. The inorganic sealing material includes a low melting glass selected from SiO&#x2014;NbO-based, BO&#x2014;F-based, PO&#x2014;F-based, PO&#x2014;ZnO-based, SiO&#x2014;BO&#x2014;LaO-based, and SiO&#x2014;BO-based low melting glasses.

A light emitting device has a light emitting element, and a high-refractive index layer that contacts an emission surface of the light emitting element. The high-refractive index layer has transparent fine particles uniformly arranged along the emission surface. The fine particles has a refractive index high than that of a material composing the emission surface of the light emitting element. Otherwise, a light emitting device has a light emitting element, a sealing material for sealing the light emitting element, and a high-refractive index layer that contacts an emission surface of the light emitting element. The fine particles has a refractive index high than that of a material composing the emission surface of the light emitting element and that of the sealing material. A phosphor may be included in the sealing material which is adapted to emit a wavelength-converted light by being excited by a light emitted from the light emitting element. The phosphor may have a same matrix as the fine particles, and it may be formed spherical. The light emitting element may be a face-up type light emitting element or a flip-chip type light emitting element.

Light emitting device and high refractive index layer

A light-emitting device includes a light-emitting diode, a red light-emitting phosphor layer, a yellow light-emitting phosphor layer, and a blue light-emitting phosphor layer. These layers are stacked in the stacking sequence of the yellow, blue, and red phosphor layers in order of increasing distance from the LED. The stacking sequence of the yellow and blue phosphor layers is first determined in such a manner that these layers do not interact with each other. The stacking sequence of the red and yellow phosphor layers and the stacking sequence of the red and blue phosphor layers are determined by the discriminant D. This determination of the stacking sequence suppresses a reduction in the conversion efficiency of the phosphors due to concentration quenching, improving the emission efficiency of the light-emitting device.

Light-emitting device including light-emitting diode and stacked light-emitting phosphor layers

A method for manufacturing a solid element device, which comprises providing a glass-containing AlOsubstrate () having a GaN based LED element () placed thereon, setting a PO&#x2014;ZnO based low melting point glass in parallel with the substrate, and carrying out a press working at a temperature of 415&#xb0; C. or higher under a pressure of 60 kgf in a nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 10poise, and is adhered via an oxide formed on the surface of the glass-containing AlOsubstrate (). A solid element device manufactured by the above method can be manufactured through a glass sealing working at a low temperature and also has a highly reliable sealing structure.

A light emitting device has a light emitting element and an adhesion layer to bond the light emitting element to a mounting member. The adhesion layer is of inorganic material particles and a transparent inorganic binding layer to be formed between the neighboring inorganic material particles, and the inorganic material particles are substantially connected with each other in the adhesion layer. Another light emitting device has a light emitting element and a phosphor layer that radiates fluorescent light while being excited by light emitted from the light emitting element. The phosphor layer is of phosphor particles and transparent inorganic binding layer to be formed between the neighboring phosphor particles.

Light emitting device including adhesion layer

A light emitting device has a light emitting element, and a phosphor layer of phosphor glass to generate fluorescence while being excited by light emitted from the light emitting element. The light emitting element emits ultraviolet light, and the phosphor glass generates visible fluorescence while being excited by the ultraviolet light.

Light emitting device

An LED package has a light emitting element, a first optical section that is disposed around the light emitting element, and a second optical section that is disposed around the first optical while being separated from the first optical section. A gap is formed between the first and second optical sections. The gap allows part of light emitted from the light emitting element to be radiated from the first optical section as nearly parallel light converged in the direction perpendicular to the center axis of the light emitting element. The second optical section includes a reflection surface to reflect the nearly parallel light in the direction parallel to the center axis of the light emitting element.

LED package

An insulation filmmade of SiOis formed on a p-type layerand a multiple thick film positive electrodewhich is a metal film formed through metal deposition, is formed on the insulation filmand on the p-type layerat the central portion of which has a window and is exposed. The insulation filmhas a thickness of one fourth multiple of emission wavelength. Thickness of the insulation filmis generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.

Semiconductor light-emitting device

A light emitting diode has: a ceramics substrate that has a high thermal conductivity; a light emitting element that is mounted on the ceramics substrate; and a radiation plate that is bonded to the back surface of the ceramics substrate. The radiation plate contacts the ceramics substrate at a contact region that includes a region of the back surface of the ceramics substrate corresponding to a region of the ceramics substrate on which the light emitting element is mounted.

Light emitting diode and light emitting diode array

Growing community of inventors

Aichi-ken, Japan

Mitsuhiro Inoue