Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Mitsuhiro Ichijo

Shunpei Yamazaki

Taketomi Asami

Toshiya Endo

Tetsuhiro Tanaka

Takashi Ohtsuki

Satoshi Toriumi

Satoshi Murakami

Kenichi Okazaki

Sachiaki Tezuka

Toru Mitsuki

Akihisa Shimomura

Kazutaka Kuriki

Seiji Yasumoto

Noriyoshi Suzuki

Hideto Ohnuma

Tomokazu Yokoi

Yuta Endo

Ryo Tokumaru

Masayuki Sakakura

Aya Anzai

Kunihiko Suzuki

Ryota Tajima

Motomu Kurata

Yuji Egi

Hiroyuki Hata

Toru Takayama

Junichi Koezuka

Hidekazu Miyairi

Koji Dairiki

Masayuki Kajiwara

Hideomi Suzawa

Toshinari Sasaki

Masashi Tsubuku

Kosei Noda

Osamu Nakamura

Tamae Takano

Kenji Kasahara

Takashi Hamochi

Yasumasa Yamane

Toshihiko Takeuchi

Yuhei Sato

Chiho Kokubo

Makoto Furuno

Yoshinori Ieda

Toshiyuki Miyamoto

Masafumi Nomura

Takeshi Shichi

Mizuho Sato

Yoshiaki Oikawa

Toshiyuki Isa

Masato Yonezawa

Erika Kato

Kunio Kimura

Shun Mashiro

Miyako Nakajima

Taichi Nozawa

Yoko Kanakubo

Yasuhiko Takemura

Toshiji Hamatani

Yasuhiro Jinbo

Takayuki Kato

Mitsunori Sakama

Yusuke Nonaka

Takeshi Fukada

Takashi Hamada

Katsuaki Tochibayashi

Naoki Makita

Nobuhiro Inoue

Masashi Oota

Noritaka Ishihara

Naoya Sakamoto

Naoki Okuno

Misako Nakazawa

Erika Takahashi

Kunihiko Fukuchi

Daigo Ito

Takahisa Ishiyama

Yoshinori Ando

Hisashi Abe

Yoshikazu Hiura

Yoichi Kurosawa

Yasutaka Suzuki

Yoshinori Yamada

Mai Sugikawa

Tetsuo Sugiyama

Osama Nakamura

A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Semiconductor device and manufacturing method thereof

The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Display device and method for manufacturing the same

A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

Manufacturing method of semiconductor device

One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.

Semiconductor device and manufacturing method of the same

A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

Semiconductor device

In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Luminescent device having light-emitting element and transistor

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.

Method for manufacturing semiconductor device

A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

Transistor and semiconductor device

Manufacturing method of semiconductor device including step of forming trench over semiconductor

Growing community of inventors

Kanagawa, Japan

Mitsuhiro Ichijo