Nec Corporation

Mitsubishi Chemical Corporation

Mitsuhiro Hamada

Hiromi Aso

Masaaki Tsuchihashi

Tetsuo Takano

Motoi Konishi

Hiroyuki Nakao

Satoshi Nagatsuka

Yoshitaka Kageyama

An oil for a carbon fiber precursor acrylic fiber including: a hydroxybenzoate ester (A) indicated by formula (1a); an amino-modified silicone (H) indicated by formula (3e); and an organic compound (X) which is compatible with the hydroxybenzoate ester (A), in which a residual mass rate R1 at 300&#xb0; C. in thermal mass analysis in an air atmosphere is 70-100 mass % inclusive, and which is a liquid at 100&#xb0; C., and a carbon fiber precursor acrylic fiber bundle to which the oil for a carbon fiber precursor acrylic fiber is adhered. 

Oil agent for carbon-fiber-precursor acrylic fiber, oil agent composition for carbon-fiber-precursor acrylic fiber, oil-treatment-liquid for carbon-fiber-precursor acrylic fiber, and carbon-fiber-precursor acrylic fiber bundle

The purpose of the present invention is to provide a method whereby deposits which have occurred on the surfaces of a fiber bundle during flameproofing treatment of a carbon fiber-precursor acrylic fiber bundle can be efficiently removed prior to carbonization treatment at high temperature. The method for production of carbon fiber bundle includes a step in which, after a carbon fiber-precursor acrylic fiber bundle has been heated and undergone flameproofing treatment, the fiber bundle is subjected to a plasma treatment involving contact with a plasma gas in gas phase, or to an ultraviolet treatment involving irradiation with ultraviolet in gas phase; and a step in which the fiber bundle having undergone the plasma treatment or the ultraviolet treatment is subjected to a carbonization treatment.

Method for production of carbon fiber bundle

A semiconductor integrated circuit device includes a plurality of ECL gate groups. Each gate group includes a plurality of ECL gates each having a constant current source formed by a MOS transistor circuit. Each gate group also includes one gate voltage control circuit. When the gate voltage control circuit receives a signal indicating a selection state for the group, it applies a high potential bias voltage to the MOS transistor circuits of all the ECL gates within the gate group. On the other hand, when it receives a signal indicating a non-selection state, it applies a low potential bias voltage (GND potential) to them, thereby lowering the constant current to the minimum necessary amount. The circuit is capable of largely saving the current consumption by controlling the bias voltage for the MOS transistor circuits in two steps depending on the selection state or the non-selection state.

Semiconductor integrated circuit device having ECL gate group circuits

A semiconductor memory device with a redundant configuration according to the present invention includes a roll call circuit which turns an output signal of a sense amplifier compulsorily to a signal of a predetermined logical level when a portion constituting the redundant configuration is accessed, and turns an output signal of the output control circuit to that of the same predetermined logical level when a write instruction is given outside a normal level. Whether a spare memory cell is accessed can be checked in every output and the redundant configuration can operate with stability.

Semiconductor memory device

In a test of a fabricated semiconductor memory chip, a test control signal is supplied to a test control circuit, so that a spare memory cell array is tested whether spare memory cells are functionable for writing and reading of data. The test control signal is applied to terminals which are used for the supplying of an address signal, etc. For this purpose, the test control signal has a level different from that of the address signal. Therefore, the spare memory cell array can be tested simultaneously with a test of normal memory cell array.

Growing community of inventors

Tokyo, Japan

Mitsuhiro Hamada