Toshiba Memory Corporation

Mitsuhiro Abe

Toshihiro Suzuki

Masaki Fujiu

Masatsugu Kojima

A semiconductor memory device includes a first plane including a memory cell array, a second plane including a memory cell array, a control circuit configured to control operations performed on the first and second planes separately and independently, and first register for storing a condition value related to a condition of an operation to be performed on a plane. When a first command to store a first condition value in a first address of the first register is received, the control circuit specifies a plane to which the first address has been allocated. When the first plane is specified by the first address, the control circuit determines whether the first plane is in a command receivable state. Then, when the control circuit determines that the first plane is in the command receivable state, the control circuit stores the first condition value in the first address of the first register.

Semiconductor memory device

According to one embodiment, a semiconductor device includes an input/output circuit. An input/output circuit includes first to third circuits. The first circuit transmits one of first to third data to the second circuit. The second circuit outputs the data, in a first-in-first-out (FIFO) format. The third circuit transmits first clock signal to the first circuit when the first circuit outputs one of the first and second data. When the one of the first and second data is read, the second circuit receives the one of the first and second data in response to the first clock signal within a period until a first signal is received. When the third data is read, the second circuit receives the third data in response to a second clock signal within the period.

Growing community of inventors

Kanagawa, Japan

Mitsuhiro Abe