Sumitomo Electric Industries, Limited

Mitsuhiko Sakai

Toru Hiyoshi

Keiji Wada

Takeyoshi Masuda

Kosuke Uchida

Masaki Furumai

So Tanaka

Yu Saitoh

Hiroyuki Kitabayashi

Hirotaka Oomori

Hideto Tamaso

Susumu Yoshimoto

A semiconductor device includes: a semiconductor substrate having a first main surface; an aluminum electrode having a first surface facing the first main surface and a second surface opposite to the first surface, the aluminum electrode being disposed on the semiconductor substrate; a passivation film that covers a peripheral edge of the second surface and that is provided with an opening from which a portion of the second surface is exposed; a copper film disposed on the second surface exposed from the opening so as to be separated from the passivation film; and a metal film disposed on the second surface exposed from between the passivation film and the copper film. The metal film is constituted of at least one selected from a group consisting of a nickel film, a tantalum film, a tantalum nitride film, a tungsten film, a titanium film, and a titanium nitride film.

Semiconductor device with metal film on surface between passivation film and copper film

A semiconductor device of the present disclosure includes: a semiconductor substrate having a first main surface; a first aluminum electrode having a first surface facing the first main surface and a second surface opposite to the first surface, the first aluminum electrode being disposed on the semiconductor substrate; a passivation film that covers a peripheral edge of the second surface and that is provided with an opening from which a portion of the second surface is exposed; and a copper film. The second surface exposed from the opening is provided with a recess that is depressed toward the first surface. The copper film is disposed in the recess.

Semiconductor device

A silicon carbide substrate includes a first impurity region, a second impurity region in contact with the first impurity region and having p type, a third impurity region on the first impurity region and the second impurity region and having n type, a body region, and a source region. A gate insulating film is in contact with the source region, the body region and the third impurity region at a side surface, and in contact with the third impurity region at a bottom surface. When viewed in a direction perpendicular to a main surface, the second impurity region contains the bottom surface, and an area of the second impurity region is greater than an area of the bottom surface, and is not more than three times the area of the bottom surface. An impurity concentration of the second impurity region exceeds 1&#xd7;10cm, and is not more than 1&#xd7;10cm.

Silicon carbide semiconductor device

A silicon carbide layer includes a drift region, a body region and a source region. The drift region constitutes a first main surface and has a first conductivity type. The body region is provided on the drift region, and has a second conductivity type. It is provided on the body region to be separated from the drift region, constitutes a second main surface, and has the first conductivity type. The silicon carbide layer is provided with a trench including a first side wall portion and a first bottom portion. The silicon carbide layer is embedded in the drift region to face the first bottom portion, and includes a second conductivity type region having the second conductivity type. The second conductivity type region is electrically connected to the source region.

Silicon carbide semiconductor device and method for manufacturing same

In accordance with the following step of a method of manufacturing a MOSFET, a first cutting step of cutting a silicon carbide wafer along a plane substantially parallel to a {11-20} plane is performed. After the first cutting step, a second cutting step of cutting the silicon carbide wafer along a plane substantially perpendicular to the {11-20} plane and substantially perpendicular to the first main surface is performed.

Method of manufacturing silicon carbide semiconductor device

A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate including a semiconductor layer having a first main surface and a second main surface located opposite to the first main surface and an epitaxial layer formed on the first main surface, forming a trench having a sidewall passing through the epitaxial layer and reaching the semiconductor layer and a bottom portion continuing to the sidewall and located in the semiconductor layer, decreasing a thickness of the semiconductor layer by grinding the second main surface, forming an electrode layer on the ground second main surface, achieving ohmic contact between the second main surface and the electrode layer by laser annealing, and obtaining individual substrates by forming a cutting portion along the trench and dividing the semiconductor substrate along the cutting portion.

Method of manufacturing semiconductor device, semiconductor substrate, and semiconductor device

A breakdown voltage measuring method includes the steps of measuring a breakdown voltage of a semiconductor element in a state where a surface of the semiconductor element formed in a semiconductor substrate is covered with a high boiling point fluorine fluid having a boiling point of 90&#xb0; C. or higher, and cleaning the semiconductor substrate, including the semiconductor element for which the breakdown voltage is measured, with a low boiling point fluorine inert fluid having a boiling point of 80&#xb0; C. or lower. Accordingly, a breakdown voltage measuring method capable of suppressing generation of an electric discharge during the measurement of the breakdown voltage and suppressing a residue of a foreign object on the cleaned semiconductor substrate, and a semiconductor device to which the breakdown voltage measuring method is implemented are provided.

Breakdown voltage measuring method and method for manufacturing semiconductor device

A method for manufacturing a silicon carbide semiconductor device includes steps of preparing a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface, forming a groove portion in the first main surface of the silicon carbide substrate, and cutting the silicon carbide substrate at the groove portion. The step of forming the groove portion includes a step of thermally etching the silicon carbide substrate using chlorine. Thereby, a method for manufacturing a silicon carbide semiconductor device capable of suppressing damage to a chip is provided.

Method for manufacturing silicon carbide semiconductor device

A method of manufacturing a wide band gap semiconductor device includes the steps of preparing a wide band gap semiconductor substrate, separating the wide band gap semiconductor substrate into a plurality of first semiconductor chips, fixing the plurality of first semiconductor chips on a fixation member, measuring a breakdown voltage of each of the first semiconductor chips while immersing at least the first semiconductor chips in inert liquid, and after the step of measuring a breakdown voltage of each of the first semiconductor chips, providing a plurality of second semiconductor chips each having each of the first semiconductor chips fixed on the fixation member, by cutting the fixation member.

Methods of manufacturing wide band gap semiconductor device and semiconductor module, and wide band gap semiconductor device and semiconductor module

A method of measuring a breakdown voltage of a semiconductor element includes the steps below. A wafer provided with a plurality of semiconductor elements each having an electrode is prepared. The wafer is divided into a plurality of chips provided with at least one semiconductor element. After the step of division into the plurality of chips, a breakdown voltage of the semiconductor element is measured while a probe is in contact with the electrode of the semiconductor element in an insulating liquid.

Method of measuring breakdown voltage of semiconductor element and method of manufacturing semiconductor element

A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region.

Growing community of inventors

Osaka, Japan

Mitsuhiko Sakai