Oki Data Corporation

Oki Electric Industry Co., Ltd.

Filnex Inc.

Oki Data Communication

Oki Electric Industry, C., Ltd.

Mitsuhiko Ogihara

Hiroyuki Fujiwara

Masumi Taninaka

Yukio Nakamura

Takatoku Shimizu

Masaaki Sakuta

Takahito Suzuki

Hiroshi Hamano

Tomohiko Sagimori

Tomoki Igari

Ichimatsu Abiko

Masataka Muto

Yusuke Nakai

Hironori Furuta

Kazuo Tokura

Hiroshi Kurokawa

Masumi Koizumi

Masaharu Nobori

Akihiro Hashimoto

Motoki Kobayashi

Shinji Ohuchi

Katsuyuki Ito

Makoto Terui

Tsutomu Nomoto

Makoto Ishimaru

Takao Kusano

Taishi Kaneto

Takashi Ushikubo

Morifumi Ohno

Susumu Chihara

Satoru Tanaka

Hiroaki Kikuchi

A semiconductor substrate includes: a base substrate; a removal layer, and of which at least a portion is to be removed by performing etching; a semiconductor epitaxial layer provided above the removal layer; and a support member for supporting the semiconductor epitaxial layer in a state where the support member is in contact with side surfaces of the base substrate, the removal layer, and the semiconductor epitaxial layer such that the semiconductor epitaxial layer is positioned above the base substrate, the support member being cut off in a region in contact with the removal layer due to application of a force to the semiconductor epitaxial layer. The thickness of at least a portion of a region of the support member in contact with the removal layer is smaller than the thickness of other regions that are different from the at least the portion of the region in the support member.

Semiconductor substrate, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes the steps of a first separation process of separating the semiconductor layer from the first substrate by bringing a pick-up substrate into close contact with the semiconductor layer and then moving the pick-up substrate away from the first substrate, pressing of pressing the semiconductor layer that is in close contact with the pick-up substrate to the second substrate, temperature maintenance of maintaining temperatures of contact surfaces of the semiconductor layer and the second substrate at a temperature higher than room temperature while pressing the semiconductor layer onto the second substrate, and a second separation process of separating the semiconductor layer from the pick-up substrate after the temperatures of the contact surfaces are maintained at the temperature higher than room temperature.

Semiconductor device manufacturing method and semiconductor device manufacturing system

A method for manufacturing a semiconductor device includes the steps of forming a fixing layer, coupling a third substrate different from the first substrate and the second substrate to the fixing layer, separating the semiconductor thin film layer from the first substrate by moving the third substrate away from the base material substrate with the third substrate coupled to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate, wherein the forming the fixing layer forms the fixing layer having a thickness such that a crack is generated between the fixing layer formed on the first substrate and the fixing layer formed on a side surface of the semiconductor thin film layer by a force for moving the third substrate.

Semiconductor substrate

To prevent the surface of a base substrate and the bottom surface of a separated semiconductor epitaxial layer from being bonded to each other even after a removal layer is removed, the semiconductor substrate includes a base substrate, a first removal layer provided on the base substrate, a second removal layer provided above the first removal layer, and a semiconductor epitaxial layer provided above the second removal layer, and an etching rate of the second removal layer for a predetermined etching material is larger than the etching rate of the first removal layer for the predetermined etching material.

A method for manufacturing a semiconductor device and a semiconductor substrate are provided. A method for manufacturing a semiconductor device includes the steps of forming a bonding layer that bonds a semiconductor thin film to a bonding layer region on a portion of a first substrate with a force weaker than covalent bonding, forming the semiconductor thin film in the bonding layer region and a non-bonding layer region other than the bonding layer region, separating the semiconductor thin film from the first substrate by bonding an organic layer included in a pick-up substrate different from the first substrate to the semiconductor thin film, removing the bonding layer adhered to a peeled surface of the semiconductor thin film separated from the first substrate, and bonding the semiconductor thin film from which the bonding layer has been removed to a second substrate different from the first substrate.

Method for manufacturing semiconductor device and semiconductor substrate

A method for manufacturing a semiconductor device includes the steps of forming a fixing layer, coupling a third substrate different from the first substrate and the second substrate to the fixing layer, separating the semiconductor thin film layer from the first substrate by moving the third substrate away from the base material substrate with the third substrate coupled to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate, wherein the forming the fixing layer forms the fixing layer having a thickness such lhat a crack is generated between the fixing layer formed on the first substrate and the fixing layer formed on a side surface of the semiconductor thin film layer by a force for moving the third substrate.

A method for manufacturing a semiconductor device includes the steps of forming a fixing layer that is a thin film for coupling at least a portion of a main surface of the semiconductor thin film layer on the side opposite to a base material substrate side and at least a portion of the surface of the base material substrate on a semiconductor thin film layer side, forming a void by removing a partial region of the semiconductor thin film layer or the base material substrate, coupling an organic material layer formed on a pick-up substrate to the fixing layer after forming the void, separating the semiconductor thin film layer from the first substrate by moving the pick-up substrate away from the base material substrate with the organic material layer bonded to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, includes: a step of etching a Si () substrate along a () plane of the Si () substrate to separate a Si () thin-film device having a separated surface along the () plane.

Semiconductor device

A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head

A light emitting apparatus includes a plurality of single crystal semiconductor thin films that emit light. The single crystal semiconductor thin films are secured in intimate contact to the surface of a substrate or a bonding layer formed on the substrate. A first conductive electrode is formed on the single crystal semiconductor thin film and is connected to a first conductive side metal layer. The first conductive side metal layer is closer to the surface of the substrate than a top surface of the single crystal semiconductor thin film. A second conductive electrode is formed on the single crystal semiconductor thin film. A second conductive side metal layer is connected to the second conductive electrode. The second conductive side metal layer is closer to the surface of the substrate than the top surface of the single crystal semiconductor thin film.

Light emitting apparatus

The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus being formed by bonding semiconductor thin film element on a plastic substrate, a thin film metal layer is formed on surface of the semiconductor thin film element for promoting heat release.

Display apparatus

A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Semiconductor apparatus with thin semiconductor film

A display device includes a transparent substrate, and a plurality of single-crystal thin-film semiconductor light-emitting elements disposed on one side of the transparent substrate. Each of the single-crystal thin-film semiconductor light-emitting elements is composed of single-crystal thin-film semiconductor layers separated from a base substrate, and includes a light-emitting layer and two non-light-emitting layers disposed on both sides of the light-emitting layer.

Display device capable of emitting light from opposite sides

A semiconductor device includes a diamond-like carbon film formed on the substrate. A thin film is formed on the diamond-like carbon film. The thin film has a thickness thinner than the diamond-like carbon. A semiconductor thin film having a semiconductor element is bonded onto the thin film.

Semiconductor device and optical print head

A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.

Growing community of inventors

Hachioji, Japan

Mitsuhiko Ogihara