Sony Corporation

Mitsuharu Shoji

Hiroyuki Ohmori

Ichiro Fujiwara

Yasunari Sugiyama

Tetsuya Yamamoto

Takashi Sakairi

Kiyotaka Tabuchi

Seiichi Yokoyama

Hajime Yamagishi

Kiwamu Adachi

Takayoshi Kato

Tetsuya Yakamoto

A nonvolatile magnetic memory device having a magnetoresistance-effect element includes: (A) a laminated structure having a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction; (B) a first wiring line electrically connected to a lower part of the laminated structure; and (C) a second wiring line electrically connected to an upper part of the laminated structure, wherein a high Young's modulus region having a Young's modulus of a higher value than that of a Young's modulus of a material forming the recording layer is provided close to a side surface of the laminated structure.

Nonvolatile magnetic memory device

A semiconductor device including: a first member including a selection transistor on a front surface side of a first substrate; and a second member including a resistance change device and a connection layer that comes in contact with the resistance change device, the connection layer being bonded to a back surface of the first member.

Semiconductor device and method of manufacturing the same

A nonvolatile magnetic memory device with a magnetoresistance-effect element includes a laminated structure, a first wiring line, and a second wiring line. The laminated structure includes a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction. The first wiring line is electrically connected to a lower part of the laminated structure. The second wiring line electrically connected to an upper part of the laminated structure. A high Young's modulus region is provided on a side surface of the laminated structure. A Young's modulus value of a material of the high Young's modulus region is greater than a Young's modulus value of a material of the recording layer.

A semiconductor device includes: a first member including a selection transistor on a front surface side of a first substrate; and a second member including a resistance change device and a connection layer that comes in contact with the resistance change device, the connection layer being bonded to a back surface of the first member.

A display unit includes a plurality of first electrodes provided to respective pixels; an insulating layer having an opening facing each of the first electrodes and having an overhang at an edge of the opening; a charge injection-transport layer being cut or having higher resistance at the overhang of the insulating layer to exhibit one or both of a charge injection property and a charge transport property; an organic layer including one light-emitting layer or a plurality of light-emitting layers common to all of the pixels; and a second electrode formed on an entire surface of the organic layer, the first electrodes, the insulating layer, the charge injection-transport layer, the organic layer, and the second electrode being disposed in this order from a substrate side.

Display unit, method of manufacturing display unit, and electronic apparatus

A method for manufacturing a printed-circuit board including: a capacitive element forming step of embedding a capacitive element in a substrate resin layer inside a substrate that includes a plurality of wiring layers laminated with the substrate resin layer interposed in between, the capacitive element forming step including forming a lower electrode using a conductive layer on one of the plurality of wiring layers, or using one of the plurality of wiring layers; forming a crystalline metal oxide-containing capacitor dielectric film at a temperature at or below a heat-resistant temperature of the substrate resin layer, and at or above room temperature; and forming an upper electrode on an upper surface of the capacitor dielectric film on the side opposite to the lower electrode.

Printed-circuit board and manufacturing method thereof

A method of manufacturing a nonvolatile memory device having a laminated structure in which a first magnetic material layer, a tunnel insulator film, and a second magnetic material layer are sequentially laminated, in which information is stored when an electric resistance value changes depending on a magnetization reversal state is disclosed. The method includes the steps of: sequentially forming the first magnetic material layer, the tunnel insulator film, and the second magnetic material layer; forming a mask layer on the second magnetic material layer; oxidizing a part uncovered by the mask layer of the second magnetic material layer; and reducing the oxidized part of the second magnetic material layer.

Method of manufacturing nonvolatile memory device

A magnetic memory includes a magnetic tunneling junction element having a reference layer, a tunnel barrier layer and a recording layer laminated in order, with information being written to the recording layer in accordance with spin injection magnetization reversal caused by a current, and information written to the recording layer being read out using a current. The magnetic tunneling junction element is disposed on a plug connected to a selection transistor, and a sidewall insulating film covering a side portion of the recording layer of the magnetic tunneling junction element is formed.

Magnetic memory, a method of manufacturing the same, and semiconductor integrated circuit apparatus

A magnetic head assembly having two heads with the magnetic layer of one angled between 80 to 100.degree. of the gap of the other, and method and apparatus using same. The angle formed on a magnetic tape by side surfaces of a laminated magnetic film of the first magnetic head and the surfaces of a magnetic gap of the second magnetic head are between 80 and 100.degree..

Magnetic head assembly having two heads with the magnetic layer of one

A magnetic head assembly having two heads with the magnetic layer of one angled between 80.degree. to 100.degree. of the gap of the other, and method and apparatus using same. The angle formed on a magnetic tape by side surfaces of a laminated magnetic film of the first magnetic head and the surfaces of a magnetic gap of the second magnetic head are between 80.degree. and 100.degree..

Growing community of inventors

Kanagawa, Japan

Mitsuharu Shoji