Kanto Denka Kogyo Co., Ltd.

Kioxia Corporation

Mitsuharu Shimoda

Toshiyuki Sasaki

Korehito Kato

Yoshinao Takahashi

Yoshihiko Iketani

Hisashi Shimizu

Takaya Ishino

In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CHFwhere C, H and F respectively denote carbon, hydrogen and fluorine, 'x' denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CHFis the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Method of manufacturing semiconductor device, and etching gas

Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiOor SiN, or a composite material of SiOand SiN over a mask material as well as processing into satisfactorily vertical processed shapes. It is possible, for example, to enhance selectivity over a mask material or other materials excluding an etching target, to reduce damage on sidewalls, and to suppress etching in the lateral direction by generating a plasma of a gas compound having a thioether skeleton represented by general formula (1) or a mixed gas thereof and etching a film consisting of a composite material or a single material, such as SiOor SiN, thereby depositing a protective film that contains sulfur atoms and has a lower content of fluorine atoms than the cases of using common hydrofluorocarbon gases:general formula (1): Rf&#x2014;S&#x2014;Rf&#x2003;&#x2003;(1)where Rfis a monovalent organic group represented by CHFand Rfis a monovalent organic group represented by CHF.

Plasma etching method using gas molecule containing sulfur atom

Growing community of inventors

Shibukawa, Japan

Mitsuharu Shimoda