Kabushiki Kaisha Toyota Jidoshokki

Sicoxs Corporation

Mitsuharu Kato

Motoki Kobayashi

Takamitsu Kawahara

Kuniaki Yagi

Akiyuki Minami

Hidetsugu Uchida

Toyokazu Sakata

Naoki Hatta

Ko Imaoka

Tomoatsu Makino

A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.

Semiconductor substrate and method for manufacturing semiconductor substrate

Growing community of inventors

Tokyo, Japan

Mitsuharu Kato