Hitachi, Ltd.

Hitachi Microcomputer System, Ltd.

Other

Renesas Technology Corp.

Mitsugu Kusunoki

Kazutaka Mori

Michiaki Nakayama

Ryusuke Sahara

Masanori Odaka

Shuuichi Miyaoka

Kazuhisa Miyamoto

Hiroshige Kogayu

Kouji Kobayashi

Takashi Ogata

Masato Ikeda

Hideo Sawamoto

Nobuo Tamba

Masao Kato

Hideki Sakakibara

Kayoko Saito

Tsutomu Sumimoto

Atsushi Okumura

Takashi Matsumoto

Mitsuo Usami

Akira Yamagiwa

Keiichi Higeta

Toru Kobayashi

Masatoshi Hasegawa

Kozaburo Kurita

Akira Masaki

Takao Okazaki

Hiroshi Otori

Yuji Yokoyama

Masato Hamamoto

Shuichi Miyaoka

Atsushi Wakahara

Hiroyasu Ishizuka

Hideyuki Takahashi

Tomoo Murata

Masatoshi Sakamoto

Kentaro Miyajima

Kenta Mochiduki

Masaki Kouno

Kenichiro Yamaguchi

Hikaru Suzuki

Kazumasa Takashima

Yusuke Takada

Nobutaka Itoh

Koji Ishikawa

Tamotsu Miyake

Takeshi Miyazaki

Yuuji Suzuki

Shinichiro Masuda

A power controllable wireless communication device includes a variable gain amplifier having a gain that can be controlled based on a gain control signal, a reference power generation circuit, which generates first reference power and second reference power differing from the first reference power, a sensor circuit supplied with selectively power of a high frequency signal output from the variable gain amplifier, and the first reference power and the second reference power generated by the reference power generation circuit, and a control circuit which generates the gain control signal based on a sensor output from the sensor circuit. When controlling power, the control circuit generates the gain control signal based on ratios among a first sensor output corresponding to the first reference power, a second sensor output corresponding to the second reference power, and a high frequency sensor output corresponding to the power of the high frequency signal.

Power controllable wireless communication device

Because of stress occurring due to a change in temperature, and presence of heat distribution on a semiconductor substrate, and a dopant dosage gradient, an offset output occurs to a Wheatstone bridge circuit intended for detection of strain, posing a problem. To solve the problem, diffusion resistors are disposed in the form of a matrix, and bridge resistors R, Reach are formed by selectively connecting diffusion resistors disposed in each odd column, in series with each other, while R, Reach are formed by selectively connecting diffusion resistors disposed in each even column, in series with each other.

Apparatus for measuring a mechanical quantity

A temperature dependence adjustable operational amplifier circuit which suppresses a change in a gain caused by a change in an input voltage is provided. In an operational amplifier including a first input terminal and an output terminal, an operational amplifier having an inverting input terminal and a non-inverting input terminal, an input resistance circuit, and a feedback resistance circuit, each of the input and feedback resistor circuits has a resistor and a trimming resistor, which are different in temperature coefficient from each other, connected in series with each other, and a source-drain path of a MOS transistor included in the trimming resistor circuit is disposed between resistance and an inverting input terminal, and a substrate potential thereof is set to a potential of the inverting input terminal of the operational amplifier.

Operational amplifier

Operating speed as well as output accuracy of a D-A converter is enhanced. With a semiconductor device including unit current sources, and unit current source switches, plural current source elements constituting each of the unit current sources are disposed so as to be evenly dispersed, thereby reducing errors of the current source element, dependent on distance while the unit current source switches are concentratedly disposed in a small region, thereby mitigating delay in operation, attributable to parasitic capacitance. In addition, with the semiconductor device including R2R resistance ladders, the R2R resistance ladder is provided on the positive and the negative of each of the unit current source switches, and the respective R2R resistance ladders are shorted with each other at respective nodes on a unit current source switch-by-unit current source switch basis, are rendered identical in length, thereby cancelling out a nonlinearity error attributable to wiring parasitic resistance.

Semiconductor device

A semiconductor apparatus includes a first transistor having a first emitter electrode, a first base electrode, and a first collector electrode in a region over a first region. Base lead-out polysilicon connecting the first base electrode and a first base region passes over a second region provided out of the first region and a resistor element is added. A writing voltage is reduced in an antifuse using two bipolar transistors.

Semiconductor apparatus

A DAC having a memory mat including a plurality of first memory cells, and a plurality of output lines connected to the plurality of first memory cells. Each of the plurality of memory cells has a first memory portion including bipolar transistors and storing information in non-volatility based on whether a junction of the bipolar transistors is destroyed or not, and a second memory portion connected to the first memory portion and for outputting information to corresponding one of the plurality of output lines. The DAC has a first mode in which information is transferred from the first memory portions to the second memory portions when the information is written into the second memory portions, and a second mode in which the second memory portions are specified externally and information is written into the second memory portions. Thus, the performance of a D/A converter can be improved.

Semiconductor device having D/A conversion portion

A semiconductor memory device that satisfies needs of both a large number of memory banks and a higher operation speed is provided. A semiconductor memory device includes a plurality of data terminal pads, and a plurality of memory banks independently subject to memory access. Each of the memory banks is divided into a plurality of submemory banks. The data terminal pads are also divided into a plurality of groups so as to be associated with submemory banks obtained by the division. Blocks each including submemory banks obtained by the division and data terminal pads associated with the submemory banks are arranged so as not to overlap each other on a semiconductor chip.

Semiconductor memory device and semiconductor device

A DAC having a memory mat including a plurality of first memory cells, and a plurality of output lines connected to the plurality of first memory cells. Each of the plurality of memory cells has a first memory portion including bipolar transistors and storing information in non-volatility based on whether a junction of the bipolar transistors is destroyed or not, and a second memory portion connected to the first memory portion and for outputting information to corresponding one of the plurality of output lines. The DAC has a first mode in which information is transferred from the first memory portions to the second memory portions when the information is written into the second memory portions, and a second mode in which the second memory portions are specified externally and information is written into the second memory portions.

Semiconductor device having memory cells implemented with bipolar-transistor-antifuses operating in a first and second mode

The present invention provides a semiconductor integrated circuit device equipped with at least one pulse generator which generates a pulse of a pulse with shorter than a rising time up to the full amplitude of a transfer signal. A first signal and a second signal supplied from outside through a first signal path and a second signal path are respectively transferred to the pulse generator. When a rising time up to the full amplitude at any one of buffers in the first signal path and the second signal path is longer than a pulse width of a pulse to be formed by the pulse generator, the difference in phase between the first signal and the second signal is caused to correspond to a pulse width of a first pulse.

Semiconductor integrated circuit device

A first clamp circuit and a second clamp circuit stacked thereon in vertical respectively for clamping unwanted level voltages are provided between the high potential side power source and low potential side power source and an intermediate node formed by vertical stacking of the first clamp circuit and second clamp circuit is coupled with the power source for internal circuit. Since a capacitor originally provided in the internal circuit is allocated in parallel to the first clamp circuit, impedance is reduced due to existence of the capacitor and potential difference due to over-current flowing in the chip is reduced. Accordingly, potential difference due to over-current flowing into the chip may be reduced and static electricity dielectric strength can be improved by allowing higher over-current. Thereby, impedance when the clamp circuits are stacked in two stages.

The present invention provides a semiconductor integrated circuit device equipped with an input circuit capable of stably performing a high-speed operation up to a low voltage. A rail to rail circuit constitutes a differential input circuit, and a circuit similar to such a differential input circuit is used to constitute a bias circuit. A pair of output terminals of a differential circuit constituting such a bias circuit is commonly connected to form a bias voltage corresponding to a middle point. The bias voltage is supplied to the gates of current source MOSFET and the gates of cascode-connected MOSFETs in the differential input circuit, and the gates of the corresponding current source MOSFETs and cascode-connected MOSFETs in the bias circuit corresponding to itself.

A manufacturing method of a semiconductor device capable of obtaining highly reliable semiconductor devices with the realization of high integration and high speed intended is provided. During processes after a desired circuit including a CMOS static type circuit is formed on a semiconductor substrate until product shipment, a first operation of feeding a predetermined input signal to the circuit and retrieving a first output signal corresponding to it and a second operation of giving an operating condition of increasing an ON resistance value of MOSFETs constituting the CMOS static type circuit and retrieving a second output signal corresponding to the condition are conducted, and a testing step of determining a failure by the first output signal varying from the second output signal.

Manufacturing method of semiconductor device

There is provided a semiconductor integrated circuit device for realizing in the higher accuracy the verification of a plurality of operations of a clock generation circuit to form an internal clock signal and enabling verification for various performances of the internal clock signal generation circuit while simplifying the structure thereof. In such semiconductor integrated circuit device, a measuring circuit for conducting at least two kinds of measurements among the measurements of lock time until the predetermined internal clock signal corresponding to the input clock signal can be obtained, the maximum frequency of the internal clock signal and jitter of the internal clock signal is provided to the clock generation circuit to form the internal clock signal corresponding to the input clock signal inputted from an external terminal. Thereby, operations of the clock generation circuit can be verified with higher accuracy within the semiconductor integrated circuit device.

A semiconductor integrated circuit device has a memory array which includes amplifying MOSFETs of sense amplifiers which amplify small voltages read out of dynamic memory cells onto bit lines and column switch MOSFETs which select bit lines, a read/write section which includes main amplifiers for reading out stored data from memory cells selected by the column switch, and a logic circuit which implements the input/output operation of data with the read/write section. Two capacitors each having a first electrode which corresponds to a plate electrode with the same structure as that of storage capacitors of dynamic memory cells and a second electrode which is multiple commonly-connected storage nodes of the storage capacitors are arranged in serial connection, disposed contiguously to the read/write section, and connected between operation voltage lines of the read/write section.

Semiconductor integrated circuit device having stabilizing capacitors connected between power lines of main amplifiers

A variable logic circuit comprises a memory cell, a transistor which turns on or off depending on data stored in the memory cell, a transistor which is connected in series to the above-mentioned transistor and is turned on or off by an input signal, a transistor which produces a voltage depending on the conduction states of the above-mentioned transistors, and transfer means which conducts or does not conduct the produced voltage to the output terminal depending on a select signal.

Variable logic circuit and semiconductor integrated circuit using the

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Kunitachi, Japan

Mitsugu Kusunoki