Fujitsu Semiconductor Limited

Fujitsu Corporation

Mitsufumi Naoe

Tomoyuki Okada

Koichi Suzuki

Masanori Onodera

Naoya Sashida

Eiichi Hoshino

Masahiko Minemura

Yoshito Konno

Naoyuki Ishiwata

Tsutomu Horie

Kanji Takeuchi

Seiji Makino

Kazumasa Doi

Yukihiro Sato

Toru Miyauchi

Yasuhiko Inada

Masakazu Ohseki

Shoko Saito

Tomoaki Inaoka

A semiconductor wafer including patterns transferred to a plurality of shot regions of the semiconductor wafer respectively, a plurality of chip regions being formed in the plurality of shot regions respectively, a plurality of first dummy patterns being formed respectively in a first chip region of the plurality of chip regions of each of the plurality of shot regions, the plurality of first dummy patterns being arranged repeatedly in a first manner, a plurality of second dummy patterns being formed respectively in a second chip region of the plurality of chip regions of each of the plurality of shot regions, the plurality of second dummy patterns being arranged repeatedly in a second manner different from the first manner.

Semiconductor wafer and method for manufacturing semiconductor device

A method for producing semiconductor device includes: performing first, second and third exposures of a photoresist film formed on a semiconductor wafer via a mask; wherein: first, second and third shot regions respectively defined by the first, second and third exposures are aligned in a first direction; the mask has a shot region including a peripheral scribe region having a first and second side crossing the first direction; the photoresist film is of positive type, a first pattern is formed as a light shielding pattern disposed on the first side, and a second pattern is formed as a light transmitting region disposed on the second side; the first and second exposures are performed in such a manner that the first and second patterns do not overlap each other; and the second and third exposures are performed in such a manner that the first and second patterns overlap each other.

Semiconductor device and a method for producing semiconductor device

A pattern verification apparatus includes a correction section creating a plurality of first data pieces; a determination section performing light intensity simulation to create a plurality of plots, determine whether or not each of the plurality of simulation result plots falls within an allowable range, and recognize two or more simulation result plots which do not fall within the allowable range as a plurality of second data pieces; an extraction section extracting a reference pattern of the plurality of original design patterns corresponding to the plurality of second data pieces; and a classifying section classifying the plurality of second data pieces into categories of the reference pattern.

Pattern verification method, pattern verification apparatus, and pattern verification program

An inspection apparatus of a mask for exposure that has a light shielding regionand a half-tone regionon a transparent substrate, includes a storage unit stored with half-tone pattern area data specifying an existing area of the half-tone region, a pattern detection unitacquiring a binary image of an area in which to scan over the surface of the transparent substrate by a relative movement with respect to the transparent substrate, and a control unitmaking effective a detecting operation of the pattern detection unit in the area on the transparent substrate that is specified by the half-tone pattern area data, and making ineffective the detecting operation of the pattern detection unit outside the specified area.

Inspection apparatus, inspection method and manufacturing method of mask for exposure, and mask for exposure

According to the present invention, provided is a method of manufacturing a electronic device including forming a film over a substrate, performing a photoresist over the film, performing a first exposure by using an exposure mask which includes a scribe region and a inspection mark formed in a first side of the scribe region, and performing a second exposure so that a region that is exposed to the first side in the first exposure is exposed to a second side of the scribe region which is opposite to the first side, wherein, in the second exposure, an exposure light is incident on a region where the inspection mark is projected in the first exposure.

Exposure mask, manufacturing method of electronic device, and checking method of exposure mask

A transparent optical device is provided with a transparent medium having a front side, at least a portion of the front side being adapted for receiving light. A porous layer is formed on substantially all areas of the front side which are adapted for receiving light. The transparent optical device may have a recessed surface area which is recessed below a remainder area of the front side to define a phase shift photomask. The transparent medium may be made of synthesized silica. The porous layer may be formed by reactive ion etching using gaseous plasma of halogenized hydrocarbon. The front side of the transparent medium may have a portion not adapted for receiving light which may have a metal pattern formed thereon. In producing the transparent optical mask, the porous layer may be formed before or after the metal pattern. The transparent optical device may be formed in an etching chamber in which etching depth is monitored by measuring the transmissivity of a preselected portion of the transparent medium.

Transparent optical device and fabrication method thereof

Growing community of inventors

Kawasaki, Japan

Mitsufumi Naoe