Tdk Corporation

Futaba Corporation

Semiconductor Energy Laboratory Co., Ltd.

Mitsufumi Kodama

Masaaki Hiroki

Michio Arai

Takeshi Fukada

Yukio Yamauchi

Masaaki Ikeda

Naoya Sakamoto

Kazushi Sugiura

Nobuo Furukawa

Shigeyuki Ishiguro

Ichirou Takayama

Shinji Ide

Ikuo Ohmori

Fumio Kimura

Toshio Hayakawa

Keisuke Watanabe

Takahiro Niiyama

Yuuki Aburakawa

Daisuke Takeuchi

Yosuke Mizutani

Shigeo Naritomi

Toshiaki Maruoka

A display device includes a first substrate, a sealing layer located along an edge of the first substrate, a second substrate coupled with the first substrate via the sealing layer, a display part located on the second main surface and within a sealed space, and a filler filling the sealed space and including a particle solid drying agent dispersed therein. The display part includes an organic EL element located on the second substrate, the organic EL element including a first electrode, an organic EL layer, and a second electrode stacked in order from the second substrate. Additionally, the display part includes an organic sacrifice layer located on and in contact with the second electrode, and a first inorganic protective layer located on and in contact with the organic sacrifice layer. The filler is located between the first inorganic protective layer and the first substrate.

Display device and manufacturing method thereof

The organic EL display module includes an organic EL display device having flexibility, a touch panel having flexibility, a first adhesive portion for attaching the organic EL display device and the touch panel to each other, a curved and flexible intermediate housing disposed on an opposite side from the organic EL display device with respect to the touch panel, and a second adhesive portion for attaching the touch panel and the intermediate housing to each other.

Organic el display module

The present invention relates to a flexible organic EL device comprising, on one of the surfaces of an organic resin base, an inorganic protective layer, an organic EL light emitting part, a buffer layer, and a breakage-resistant layer in this order, wherein the buffer layer is a silicone or EPDM containing layer and an elastic modulus of the breakage-resistant layer at 5 to 35&#xb0; C. is 100 MPa to 300 GPa.

Flexible organic EL device

A display apparatus comprises a display unit which has a plurality of organic EL elements two-dimensionally arranged to define pixels. Each organic EL element comprises a first electrode, an organic EL layer, and a second electrode laminated in order on an optically transparent substrate. One of the first electrode and second electrode is an optically transparent electrode, while the other is a non-optically transparent electrode. The non-optically transparent electrode is disposed to exist only in part of each pixel, as viewed from vertically above (for example, the width of the electrode is made smaller than the width of a pixel). In this way, the display unit can transmit light through portions of the pixels in which the non-optically transparent electrodes are not disposed. Preferably, the non-optically transparent electrode includes a mirror surface opposite to the organic EL layer.

Organic EL display apparatus

An organic EL display apparatus includes a display unit having a plurality of organic EL elements two-dimensionally arranged on a substrate, where the organic EL elements provide pixels, a sealing plate configured to be adhered to the substrate with an adhesive to cover the display unit, and a plurality of lead wires disposed on the substrate such that the lead wires are drawn outward from the display unit to the outside of the sealing plate. A linear bank is formed along an adhesion zone defined on the substrate to extend across the lead wires in a region where these lead wires are disposed. The sealing plate has its periphery adhered to the adhesion zone on the substrate along the adhesion zone on the substrate.

Organic electro-luminescense display apparatus

An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.

Method of making a semiconductor image sensor device

A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG., and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.

Non-single crystal semiconductor device with sub-micron grain size

A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG. , and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.

Method for producing a non-single crystal semiconductor device

Growing community of inventors

Mobara, Japan

Mitsufumi Kodama