Semiconductor Energy Laboratory Co., Ltd.

Tdk Corporation

Tkd Corporation

Mitsufumi Codama

Michio Arai

Naoya Sakamoto

Ichiro Takayama

Yukio Yamauchi

Takeshi Fukada

Kazushi Sugiura

Masaru Tanaka

Nobumitsu Amachi

Mitsunori Sakama

Isamu Kobori

Kenji Nakaya

Osamu Onitsuka

Takashi Inushima

Noriaki Kondo

Shunpei Yamazaki

Toru Takayama

Toshiji Hamatani

Tetsushi Inoue

Munehiro Takaku

Yasunaga Kagaya

Mitsunri Sakama

Takashi Fuki

A MOS transistor having a LDD structure is described. In accordance with the present invention a MOS transistor includes a low impurity concentration region formed in a semiconductor film between an end of a gate electrode and a source or drain. The transistor includes an insulating film extending beyond the gate electrode in the direction of the source and drain, the insulating film having a thicker portion over the channel region of the semiconductor film and a thinner portion over the source and drain regions of the semiconductor film, such that LDD regions can be formed by utilizing the thickness difference between the thick portion of the insulating film and the thin portion of the insulating.

Method for forming a MOS transistor having lightly dopped drain regions and structure thereof

A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800&deg; C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtained. Thermal contraction of the insulating substrate is set in a range of 30 to 500 ppm in the heating process, so that the thin film transistor has high mobility, low threshold voltage and high off-resistance. Thermal contraction of the insulating substrate may be also set 100 ppm or less in a heating process after a patterning treatment in a thin film transistor producing process.

Thin film transistor and semiconductor device and method for forming the same

A semiconductor device comprising an active layer made from a crystalline silicon formed on a substrate having an insulating surface; a gate insulating film formed on said active layer; and a source region and a drain region provided in contact with said active layer; wherein, said active layer generates photo carriers upon irradiation of a light, a part of the thus generated photo carriers having the opposite polarity with respect to that of the carriers flowing in the vicinity of the interface with the gate insulating film is temporarily accumulated within said active layer to change the resistance of the region of said active layer, and the light irradiated to said active layer is detected from the change in current flow between the source and the drain which occurs in accordance with the change in resistance in the region of said active region. The semiconductor device according to the present invention is particularly an image sensor device which amplifies an optical signal and which outputs it as an electric signal.

Semiconductor device and method for operating the same

In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhand the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the tube formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90&deg;.

Organic electroluminescence display device and producing method thereof

The invention is directed to an organic EL device with a flattened first electrode, and a method of fabricating the same. After an ITO film serving as the first electrode is formed on a glass substrate , a combined flattening and leveling film is formed and patterned to form a combined flattening and leveling film . In addition, the ITO film is over-etched to form an ITO film together with an undercut portion . After a flattening film or an insulating film is coated all over the surface, a large portion of the flattening film and the flattening and leveling film are removed to allow an insulating film formed in the undercut portion to remain at the same thickness as the ITO film

Organic electroluminescent device, and its fabrication method

An organic EL device comprises a hole injecting electrode, an electron injecting electrode, and at least one organic layer located between both the electrodes. The hole injecting electrode comprises a transparent electrode at a light emitting area, and a metal electrode located at a portion other than the light emitting area and having a sheet resistance of 1 &OHgr;/&square; or lower.

Organic EL device having a hole injecting electrode including a transparent electrode and a metal electrode

An organic EL display wherein electric connection between the electron injecting electrode layer and the electrode layer is improved, which is less likely to suffer from poor connection, and which exhibits low connection resistance is realized. A method for producing such an organic EL display is also realized. Such an organic EL display has an electrode structure which connects at least a terminal and an electron injecting electrode, and the electrode structure comprises an underlying layer,as a lower layer comprising a metal having low susceptibility to surface oxide layer formation, and an electrode layer,as an upper layer comprising a metal which has a susceptibility to surface oxide layer formation higher than that of the underlying layer,. The underlying layer,and the electron injecting electrode layer,are in direct contact with each other at least in some parts in the region where the electrode layer,is connected to said electron injecting layer

Organic electroluminescent display and method for its manufacture

In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhang the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the thus formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90&deg;.

The invention provides an organic EL display device comprising a plurality of organic EL elements each having at least a first electrode, one or more organic layers participating in light emission capability, and a second electrode, the elements being able to be independently electrically operated to emit light, and a groove structure at the boundary between adjacent organic EL elements for isolating at least one of the electrodes between the adjacent organic EL elements. The organic EL display device featuring a greater proportion of light emitting region, higher reliability, a large size of substrate, a more number of elements arrayed in one substrate, and a reduced cost of manufacture is obtained as well as a method for the manufacture thereof.

Organic EL display device and method of making

An organic EL device includes a substrate (,), a hole infecting electrode (,), an electron injecting electrode (,), and organic layers (,) disposed between the electrodes. The hole injecting electrode (,) is an ITO electrode having (111) orientation. Due to improved film formation, close contact and physical properties at the interface between the hole injecting electrode and the organic layer, the device has a long lifetime, high luminance, high efficacy, and quality display and prevents the occurrence of current leakage and dark spots.

Organic electroluminescent device and preparation method with ITO electrode (111) orientation

In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhang the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the thus formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90.degree..

An organic EL color display which can give off color light without recourse to a plurality of light emitting layers and be fabricated at low cost is built up of an organic EL color display comprising an organic EL light emitting device for emitting bluish green light, a blue transmitting layer, a green transmitting layer, a fluorescence converting layer that absorbs bluish green light and giving off light including red light, and a red transmitting layer.

Organic electroluminescent color display having color transmitting

An organic electroluminescent display includes a substrate (1), and, in order from the substrate, a hole injection electrode, at least one organic layer, an electron injecting electrode, and a sealing plate, and wherein the substrate further includes thereon an element-isolating structure (7,8) for isolating planar structures of the organic layer and the electron injection electrode from each other during film formation, the element isolating structure being a solid structure containing a base part formed on the substrate side and an overhang part larger in width than the base part, and provided on a portion where the organic layer is isolated from the electron injecting electrode as well as other portions, so that the element isolating structure can function as a spacer for the sealing plate, and at least one type of filter layer (14a-14c) is interleaved between the element-isolating structure serving as the spacer and the substrate.

Organic electroluminescent display with filter layer

An image display device having a plurality of pixcels with uniform light intensity comprises an organic EL element (3), a bias FET (2) for emit current control of said EL element, a capacitor (4) coupled with a gate electrode of said bias FET (2) for holding a signal, and a select FET (1) for selectively writing a signal to said capacitor (4), wherein the value S of said bias FET (2) is larger than that of said select FET (1).

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Kanagawa, Japan

Mitsufumi Codama