Kabushiki Kaisha Toshiba

Fujitsu Corporation

Mitsuaki Suzuki

Toshihisa Nabetani

Mitsuo Nakajima

Keiji Sakamoto

Hisao Hayashi

Ren Sakata

Shinsuke Watanabe

Noritaka Deguchi

Yasushi Kojima

Yoshito Kawakyu

Junko Yamamoto

Takaaki Kamimura

Shinichi Kamagami

Hiroshi Yamaji

Tetsuya Okada

Masakuni Akashi

Jun Sakiura

Takuji Nakazono

Katsuyuki Arai

Michio Kanayama

Shuji Sato

Mitsusada Toyama

Yuichi Okimoto

According to one embodiment, a wireless terminal communicates with a server via wireless base stations. The wireless terminal has devices which transmit a signal in a normal-power transmission mode and the signal in a low-power transmission mode, a power control device which switches the normal-power transmission mode to the low-power transmission mode, or vice versa, and a device which transmits current position data to the server. The server detects the position of the wireless terminal, designates one of the base stations which is close to the wireless terminal, when the wireless terminal is set to the low-power transmission mod, and detects whether the base station designated has a problem or not according to detect the signal from the wireless terminal.

Wireless communication system and wireless communication apparatus, both for use in broadcast wireless transmission

A thin film transistor of this invention has a structure obtained by sequentially stacking, on an insulating substrate, a silicon nitride film, a silicon oxide film, a polysilicon thin film with a channel region and source and drain regions facing each other via the channel region, an insulating film, and a gate electrode. The boron concentration decreases from the channel region toward the silicon nitride film in the silicon oxide film region between the channel region and the silicon nitride film. The silicon oxide film region between the channel region and the silicon nitride film is made up of a first region which is in contact with the channel region and has a boron concentration of 1&times;10,atoms/cm,or more, and a second region between the first region and the silicon nitride film, which has a boron concentration of less than 1&times;10,atoms/cm,. The first region has a thickness of 200 &angst; or less.

Thin film transistor and method of manufacturing the same

A thin-film transistor device comprising a pixel section including a plurality of pixel electrodes arranged in rows and columns on a substrate and a plurality of thin-film transistors of reverse stagger type, connected as switching elements to the pixel electrodes, respectively, and a drive section including a plurality of thin-film transistors of coplanar type, each having a gate insulating film, for driving the thin-film transistors of the reverse stagger type. A lower insulating film is located beneath the thin-film transistors of the reverse stagger type. The lower insulating film and the gate insulating films of the thin-film transistors of the coplanar type are formed of a first insulating film provided on the substrate.

Integrated circuit device having an insulating substrate, and a liquid

Earth connection device in metal core printed circuit board

Growing community of inventors

Tachikawa, Japan

Mitsuaki Suzuki