Nuvoton Technology Corporation Japan

Rohm Co., Ltd.

Panasonic Semiconductor Solutions Co., Ltd.

Mitsuaki Sakamoto

Kazuma Yoshida

Ryosuke Okawa

Takeshi Imamura

Toshikazu Imai

Eiji Yasuda

Yoshihiro Matsushima

Hiroshi Yoshida

Shigetoshi Sota

Chie Fujioka

Hideki Mizuhara

Masaaki Hirako

Yasuyuki Masumoto

Tomonari Oota

Masao Hamasaki

Kenichi Moritoki

A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.

Semiconductor device

A semiconductor device includes a semiconductor substrate including a first conductivity-type impurity, a low-concentration impurity layer including a first conductivity-type impurity having a concentration lower than a concentration of the first conductivity-type impurity in the semiconductor substrate, a backside electrode including a metal material, and first and second transistors in the low-concentration impurity layer. The first transistor includes a first source electrode and a first gate electrode on a surface of the low-concentration impurity layer, the second transistor includes a second source electrode and a second gate electrode on the surface of the low-concentration impurity layer. The semiconductor substrate serves as a common drain region of the transistors. The thickness of the backside electrode ranges from 25 to 35 &#x3bc;m, and the ratio of the thickness of the backside electrode to the thickness of a semiconductor layer including the semiconductor substrate and the low-concentration impurity layer is 0.32 or more.

Semiconductor device, semiconductor module, and packaged semiconductor device

An audio circuit drives a speaker. A DSP corrects an audio signal Saccording to the state of the speaker. An amplifier drives the speaker according to a corrected audio signal S

Audio circuit

Growing community of inventors

Kyoto, Japan

Mitsuaki Sakamoto