Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Mitsuaki Oya

Toshiya Yokogawa

Atsushi Yamada

Ryou Kato

Akihiro Isozaki

Akira Inoue

Masaki Fujikane

Tadashi Yano

Provided is a nitride semiconductor light-emitting element having a low contact resistance between an n-type nitride semiconductor layer and an n-side electrode. A portion of the n-type nitride semiconductor layer is removed by a plasma etching process using a gas containing halogen to expose a surface region of the n-type nitride semiconductor layer. Next, such an exposed surface region is further subjected to a plasma treatment using a gas containing oxygen. After that, the n-side electrode formed of aluminum is formed so as to be in contact with the surface region. In the surface region, a carrier concentration is decreased from the inside of the n-type nitride semiconductor layer toward the n-side electrode.

Nitride semiconductor light-emitting element and method for fabricating the same

When a belt-like nitride semiconductor stacking structurehaving a principal plane of an m-plane is broken along a linear groove, two or more side surfaces may be formed on the lateral side thereof. This decreases the fabrication efficiency of the triangular prismatic m-plane nitride semiconductor light-emitting diode. To solve this problem, Angle X of not less than 75 degrees and not more than 105 degrees is formed between the linear grooveand one cleavage axis selected from the group consisting of an a-axis and a c-axis. Then, the belt-like nitride semiconductor stacking structurewas broken along the linear grooveto form a quadratic prismatic nitride semiconductor stacking structure. Subsequently, the quadratic prismatic nitride semiconductor stacking structureis broken along another linear grooveto obtain a triangular prismatic m-plane nitride semiconductor light-emitting diode

Method for fabricating triangular prismatic m-plane nitride semiconductor light-emitting diode

A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structurewhich includes a p-type semiconductor region with a surfacebeing inclined from the m-plane by an angle of not less than 1&#xb0; and not more than 5&#xb0;; and an electrodeprovided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlInGaN (where x+y+z=1, x&#x2267;0, y&#x2267;0, and z&#x2267;0) layer. The electrodeincludes a Mg layerand an Ag layerprovided on the Mg layer. The Mg layeris in contact with the surfaceof the p-type semiconductor region of the semiconductor multilayer structure

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An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structureformed from an AlInGaN (x+y+z=1, x&#x2267;0, y&#x2267;0, z&#x2267;0) semiconductor, and the nitride-based semiconductor multilayer structureincludes an active layer regionhaving an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths &#x3bb;and &#x3bb;, respectively, and thicknesses of the semiconductor chipsof the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as dand d, respectively, the following relations are satisfied: &#x3bb;and d&#x3c;d

Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating device

A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structurewith a p-type semiconductor region, of which the surfacedefines a tilt angle of one to five degrees with respect to an m plane, and an electrode, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlInGaN (where x+y+z=1, x&#x2267;0, y&#x2267;0 and z&#x2267;0) semiconductor layer. The electrodeincludes an Mg layer, which is in contact with the surfaceof the p-type semiconductor region, and a metal layerformed on the Mg layer. The metal layeris formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.

Nitride-based semiconductor device and method for fabricating the same

An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structurewhich has a p-type GaN-based semiconductor region whose surfaceis inclined from the m-plane by an angle of not less than 1&#xb0; and not more than 5&#xb0; or the principal surface has a plurality of m-plane steps; and an electrodethat is arranged on the p-type GaN-based semiconductor region. The electrodeincludes a Mg alloy layerwhich is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layeris in contact with the surfaceof the p-type GaN-based semiconductor region of the semiconductor multilayer structure

Nitride semiconductor element and manufacturing method therefor

An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1&#xb0; or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1&#xb0; or more and 5&#xb0; or less. The first and second nitride-based semiconductor light-emitting elements have thicknesses of dand d, respectively, and emit the polarized light having wavelengths &#x3bb;and &#x3bb;, respectively, where the inequalities of &#x3bb;and d&#x3c;dare satisfied.

Nitride-based semiconductor light-emitting element, lighting device, liquid crystal display device, and method for producing lighting device

A nitride-based semiconductor light-emitting deviceincludes a GaN substrate, of which the principal surface is an m-plane, a semiconductor multilayer structurethat has been formed on the m-planeof the GaN-based substrate, and an electrodearranged on the semiconductor multilayer structure. The electrodeincludes an Mg layer, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure

A nitride-based semiconductor light-emitting deviceincludes: a GaN substratewith an m-plane surface; a semiconductor multilayer structureprovided on the m-plane surfaceof the GaN substrate; and an electrodeprovided on the semiconductor multilayer structure. The electrodeincludes a Zn layerand a metal layerprovided on the Zn layer. The Zn layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure

Nitride semiconductor element having electrode on m-plane and method for producing the same

A nitride-based semiconductor light-emitting deviceincludes a GaN substrate, of which the principal surface is an m-plane, a semiconductor multilayer structurethat has been formed on the m-planeof the GaN-based substrate, and an electrodearranged on the semiconductor multilayer structure. The electrodeincludes an Mg alloy layerwhich is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure

A nitride-based semiconductor light-emitting deviceincludes: a GaN substratewith an m-plane surface; a semiconductor multilayer structureprovided on the m-plane surfaceof the GaN substrate; and an electrodeprovided on the semiconductor multilayer structure. The electrodeincludes a Zn layerand an Ag layerprovided on the Zn layer. The Zn layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure

A nitride-based semiconductor light-emitting deviceincludes: a GaN substratewith an m-plane surface; a semiconductor multilayer structureprovided on the m-plane surfaceof the GaN substrate; and an electrodeprovided on the semiconductor multilayer structure. The electrodeincludes an Mg layerand an Ag layerprovided on the Mg layer. The Mg layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure

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Osaka, Japan

Mitsuaki Oya