Semiconductor Energy Laboratory Co., Ltd.

Sony Semiconductor Solutions Corporation

Mitsuaki Osame

Shunpei Yamazaki

Aya Anzai

Jun Koyama

Masahiko Hayakawa

Yu Yamazaki

Yoshifumi Tanada

Ryota Fukumoto

Satoshi Murakami

Yasushi Ogata

Satoshi Teramoto

Keisuke Miyagawa

Satoshi Seo

Munehiro Azami

Shou Nagao

Makoto Udagawa

Kiyoshi Kato

Hisashi Ohtani

Toshiji Hamatani

Hajime Kimura

Yukio Tanaka

Tomoyuki Iwabuchi

Aya Miyazaki

Masayuki Sakakura

Mai Osada

Hiroyuki Miyake

Yutaka Shionoiri

Hiroko Abe

Hiromi Yanai

Hideto Ohnuma

Saishi Fujikawa

Kazutaka Inukai

Yukari Ando

Takashi Hirosue

Naoko Yano

Tamae Takano

Takashi Hamada

Ritsuko Nagao

Aya Anazai

Yoshiharu Hirakata

Shigeki Komori

Masaharu Nagai

Mizuki Sato

Taichi Kato

Masaaki Hiroki

Hidehito Kitakado

Yasuko Watanabe

Etsuko Fujimoto

Hideyuki Ebine

Yu Kojima

Kei Takahashi

Hiromichi Godo

Hideaki Shishido

Hidekazu Kikuchi

Masaki Sakakibara

Tetsuya Kakehata

Tomoya Futamura

Seiko Amano

Shin Kitano

Tatsuro Ueno

Ryo Nozawa

Tatsuo Ueno

Takashi Hirosure

A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

Element substrate and light-emitting device

A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.

Element substrate and light emitting device

The present technology relates to a DAC circuit, a solid-state imaging element, and electronic equipment that can be achieved with a small-scale circuit configuration. The DAC circuit includes: a ramp DAC that generates a ramp signal that changes in voltage with a constant time gradient; an injection DAC that outputs a predetermined voltage during a reset period for resetting a comparison target voltage to be compared with the ramp signal; and an adding circuit that adds an output of the ramp DAC and an output of the injection DAC and outputs the outputs to a comparison circuit as a comparison reference voltage. The present technology can be applied to, for example, a DAC circuit of a solid-state imaging element, and the like.

DAC circuit, solid-state imaging element, and electronic equipment

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is fanned so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

Semiconductor display device

The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

Light emitting device

A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high Vis applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.

Light-emitting device

A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element () is performed one row at a time by forming a reverse bias electric power source line () and a reverse bias TFT (). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

Light emitting device and method of driving the light emitting device

It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a display device with higher definition, represented by an EL display device and a liquid crystal display device. In the present invention, a wiring including Cu is provided as an electrode or a wiring used for the display device represented by the EL display device and the liquid crystal display device. Besides, sputtering is performed with a mask to form the wiring including Cu. With such structure, it is possible to reduce the voltage drop and a deadened signal.

Display device and manufacturing method thereof

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Semiconductor device

A display device includes first to fifth insulating films, first to third conductive films, semiconductor film, a planarization layer, an organic resin film, a pixel electrode, an opposing electrode and a light-emitting member. The first insulating film includes nitrogen. The second and third insulating films include oxygen. The fifth insulating film is an inorganic insulating film. The fourth insulating film, the fifth insulating film, the planarization layer and the organic resin film include first to fourth opening, respectively. An edge portion of the third opening and an edge portion of the fourth opening are rounded. Part of the third conductive film and part of the planarization layer are located in the second opening. Part of the pixel electrode and part of the organic resin film are located in the third opening. Part of the light-emitting member and part of the opposing electrode are located in the fourth opening.

Display device

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Kanagawa, Japan

Mitsuaki Osame