Sanyo Electric Co., Ltd.

Mitsuaki Morigami

Shuichi Kikuchi

Seiji Otake

Toshiyuki Ohkoda

Yasuhiro Takeda

Satoru Shimada

Kazuhiro Yoshitake

Tomio Yamashita

A wiring structure includes a first wiring, a first interlayer dielectric film having a first opening, a second wiring formed with a first recess portion on a region corresponding to the first opening, a second interlayer dielectric film having a second opening and a third wiring so formed as to cover the second interlayer dielectric film, wherein an inner side surface of the second opening is arranged on a region corresponding to the first recess portion and formed such that an opening width of a portion in the vicinity of an upper end increases from a lower portion toward an upper portion.

Wiring structure and method of manufacturing the same

A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the surface of the semiconductor substrate. Semiconductor elements, which include sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer, are formed in a semiconductor element formation region. A planar wiring layer is embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.

Semiconductor device

Growing community of inventors

Kishiwada, Japan

Mitsuaki Morigami