Sumco Corporation

Ihi Corporation

Mitsui E&s Du Co., Ltd.

Mitsuaki Hayashi

Wataru Sugimura

Yutaka Masuda

Ryusuke Yokoyama

Ippei Shimozaki

Provided is a compression ratio varying mechanism, including: a discharge oil passage connected to a first hydraulic chamber; a supply oil passage connected to a hydraulic pump; a pump cylinder including a first oil storage chamber connected to the discharge oil passage and the supply oil passage and a second oil storage chamber partitioned from the first oil storage chamber by a plunger; a branch oil passage connected to the second oil storage chamber; and an orifice provided in the branch oil passage.

Compression ratio varying mechanism

A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

Method and apparatus for manufacturing silicon single crystal

An apparatus for manufacturing a silicon single crystal is provided. The apparatus comprises a chamber (), a quarts crucible () provided in the chamber so as to be rotatable and movable upward and downward and store a silicon melt, a first heater () for melting a silicon raw material stored in the crucible, and a pulling mechanism () provided in the chamber so as to be rotatable and movable upward and downward. The pulling mechanism has a lower end to which a seed crystal (S) is attached. The seed crystal is to be dipped in the silicon melt in the crucible and pulled upward for growing a silicon single crystal by a Czochralski method. The apparatus further comprises a melt supplying mechanism () for supplying an additional silicon melt to the silicon melt in the crucible from external of the chamber. The melt supplying mechanism includes a melt inlet pipe () disposed at an inclination angle &#x3b8;1 of 50&#xb0; to 80&#xb0; with respect to the melt surface of the silicon melt and a melt generating mechanism () for supplying the additional silicon melt (M) to an opening part () of a base end of the melt inlet pipe. The melt inlet pipe has a tip end provided with an opening part (). The opening part of the tip end has an annular surface inclined at an angle &#x3b8;with respect to a direction orthogonal to the axis of the melt inlet pipe. The annular surface has a vertically lower side () and a vertically upper side (). The vertically lower side is located nearer to the tip end in the axis direction than the vertically upper side.

Growing community of inventors

Tokyo, Japan

Mitsuaki Hayashi