Seiko Epson Corporation

Mitsuaki Harada

Takeo Kawase

Soichi Moriya

Satoshi Kimura

Hidemichi Furihata

Takashi Aoki

Atsushi Miyazaki

Hirofumi Hokari

Tomoyuki Okuyama

Takehisa Saeki

To reduce or prevent metal wirings formed on one substrate and electrodes formed on the other substrate from being shorted. An electrophoretic display in which, a display part including electrophoretic particles electrophoresed by application of an electric field, and an electrophoretic display part including an electrode to apply the electric field to the display part, are bonded to a substrate. The substrate includes a metal wiring including an insulating part disposed at a position that corresponds to at least a part of an edge of the electrode.

Electrophoretic display and method of manufacturing the same

A method of forming a contact hole includes forming a first conductive layer patterned so as to serve as an electrode or a wiring on a substrate, forming an insulation layer on the substrate and the first conductive layer, inserting a cutting instrument into the insulation layer at an angle to a surface of the insulation layer, the angle being in the range from 5&#xb0; to 80&#xb0;, and forming a tapered opening extending to the electrode or the wiring in the insulation layer by drawing out the cutting instrument.

Method of forming contact hole, method of manufacturing wiring board, method of manufacturing semiconductor device, and method of manufacturing electro-optical device

A method for forming a contact hole, a method for manufacturing a circuit board and a method for manufacturing an electro-optical device that increase the reliability of electrical coupling via a conductive part and prevent wire-breaking due to projections when forming a contact hole in an interlayer film by using a needle, and burying a conductive material in the contact hole is provided.

Methods for forming contact hole, for manufacturing circuit board and for manufacturing electro-optical device

A method of manufacturing a transistor includes the step of forming on a substrate a source electrode and drain electrode by selective electroless plating after patterning a charge control agent attached to the substrate using light, and the step of forming an organic semiconductor, a gate insulation layer, and a gate electrode.

Method of manufacturing thin film transistor, method of manufacturing electro-optical device thin film transistor, and electro-optical device

An electrode is provided that is economically produced and capable of efficiently injecting holes. Also provided are a method to form an electrode that is capable of easily manufacturing such an electrode, a highly reliable thin-film transistor, an electronic circuit using this thin-film transistor, an organic electroluminescent element, a display, and electronic equipment. A thin-film transistor is a top-gate thin-film transistor. The thin-film transistor includes a source electrode and a drain electrode that are placed separately from each other. The thin-film transistor also includes an organic semiconductor layer that is laid out between the source electrode and the drain electrode, and a gate insulating layer that is provided between the organic semiconductor layer and a gate electrode. This structure is mounted on a substrate. Each of the source electrode and the drain electrode is composed of two layers, that is, an underlying electrode layer and a surface electrode layer. The surface electrode layer includes an oxide containing at least one of Cu, Ni, Co, Ag.

Electrode, method for forming an electrode, thin-film transistor, electronic circuit, organic electroluminescent element, display, and electronic equipment

Aspects of the invention can provide a method of manufacturing a thin film transistor capable of manufacturing a high-performance thin film transistor with a simple process, a thin film transistor manufactured using the method of manufacturing a thin film transistor, and a thin film transistor circuit, an electronic device, and an electronic apparatus each equipped with the thin film transistor. The method of manufacturing a thin film transistor according to the invention can include the first step of forming a source electrode and a drain electrode on a substrate by an electroless plating process, the second step of forming an organic semiconductor layer in at least an area between the source electrode and the drain electrode using a costing method, the third step of forming a gate insulating layer on the organic semiconductor layer using a coating method, and the fourth step of forming a gate electrode using a coating method so as to overlap an area on the gate insulating layer and between the source electrode and the drain electrode.

Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus

A transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described. The transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment. The transistor may be used in a circuit board, a display and electronic equipment.

Transistor, circuit board, display and electronic equipment

Aspects of the current invention are directed to a method of mounting a flexible printed circuit and a manufacturing method of an electric optical device. Each of the methods form semiconductor elements and first terminal portions for electrically connecting the semiconductor elements and the outside of the board. These terminal portions have are completely or partially covered with an organic filmand are pressed into second terminal portion on the flexible printed circuit from the direction above the organic film thereby creating an electrical connection. Optionally, an anisotropic conductive paste or anisotropic conductive film may be provided between the second terminal portion and the organic film.

Growing community of inventors

Chino, Japan

Mitsuaki Harada