Canon Kabushiki Kaisha

Mitsuaki Amemiya

Shunichi Uzawa

Yutaka Watanabe

Akira Miyake

Nobutoshi Mizusawa

Ryuichi Ebinuma

Kunitaka Ozawa

Eiji Sakamoto

Takao Kariya

Shinichi Hara

Isamu Shimoda

Keiko Chiba

Koji Uda

Takeo Tsukamoto

Ichiro Nomura

Yutaka Tanaka

Naoto Abe

Kenji Saitoh

Shigeru Terashima

Makiko Mori

Masami Tsukamoto

Yasuaki Fukuda

Naoya Iizuka

Makoto Higomura

Kohji Uda

Kenji Saito

Osamu Tsujii

Noriyuki Nose

Eigo Kawakami

Kazuyuki Kasumi

Hiroshi Kurosawa

Kazunori Iwamoto

Fumitaro Masaki

Mitsuji Marumo

Masahito Shinohara

The present disclosure concerns a charge-accumulation radiation detector that includes a semiconductor device and specifies an incident time and energy of radiation from a transferred image signal. The radiation detector includes a semiconductor substrate and electrodes disposed on both sides of the semiconductor substrate, and includes a plurality of charge accumulation units inside the semiconductor substrate. The plurality of charge accumulation units is each configured to accumulate charges generated by radiation incident on the semiconductor substrate. The charges accumulated in the charge accumulation units are readable to outside through at least one of the electrodes.

Radiation detector and compton camera

An adjusting method of an X-ray apparatus has a reflection structure, wherein assuming that one end plane of the reflection structure is an inlet port of the X-ray and the other end plane is an outlet port of the X-ray, a pitch of the reflection substrates at the outlet port is wider than that at the inlet port. When the X-ray source exists at a position where a glancing angle at the time when the X-ray enters the inlet port exceeds a critical angle, an intensity of the X-ray emitted from each passage is detected. On the basis of the detected X-ray intensity, a relative position of the X-ray source and the reflection structure is adjusted.

X-ray apparatus and its adjusting method

A radiation imaging apparatus according to the present invention includes a radiation source, a reflective structure where at least three reflective substrates are arranged with an interval and radiations being incident into a plurality of passages whose both sides are put between the reflective substrate are reflected and parallelized by the reflective substrate at both sides of the passage to be emitted from the passage, a radiation detector, and an image construction unit that constructs an image of an object based on an intensity of the radiation which is emitted from each of the passages, transmits the object and is detected by the radiation detector. When one edge of the reflective structure is an inlet of the radiation and the other edge is an outlet of the radiation, a pitch of the reflective substrates at the outlet is larger than a pitch at the inlet.

Radiation imaging apparatus

The present invention provides an X-ray optical apparatus including an X-ray reflective structure in which at least three reflective substrates are arranged with an interval and an X-ray which is incident into a plurality of X-ray passages whose both sides are put between the reflective substrates is reflected from the reflective substrate at both sides of the X-ray passage to be parallelized and emitted from the X-ray passage. When an edge of the X-ray reflective structure is an inlet of the X-ray and the other edge is an outlet of the X-ray, a pitch of the reflective substrates at the outlet is larger than a pitch at the inlet. Therefore, it is possible to efficiently parallelize the incident X-ray to be emitted with a simple structure.

X-ray optical apparatus

The present invention provides a method of adjusting an X-ray optical apparatus which includes: an X-ray source; and a reflective structure where at least three reflective substrate arranged with an interval and X-rays which are incident into a plurality of passages whose both sides are put between the reflective substrates are reflected and parallelized by the reflective substrate at both sides of each passage to be emitted from the passage. When one edge of the reflective structure is an inlet of the X-ray and the other edge is an outlet of the X-ray, a pitch of the reflective substrates at the outlet side is larger than a pitch at the inlet side. The method comprises adjusting the relative positions of the X-ray source and the reflective structure so as to reduce a penumbra amount formed by the X-ray emitted from each of the passages.

X-ray optical apparatus and adjusting method thereof

A filter used for an exposure apparatus that exposes a plate using a light from a light source includes a light transmitting film configured to transmit the light from the light source, a first rod member that includes plural first rod members, and thermally contacts the light transmitting film, the plural second rod members being rod members and including a second rod member; and a second member that includes plural second rod members, and thermally contacts the light transmitting film and/or the first member, the plural second rod members being other rod members including a second rod member, wherein a heating value transmittable by the first rod member per unit time in a longitudinal direction of the first rod member is smaller than a heating value transmittable by the second rod member per unit time in a longitudinal direction of the second rod member.

Filter exposure apparatus, and device manufacturing method

A measuring method that utilizes a bandpass filter and a measurement apparatus to measure an intensity of light having a predetermined wavelength among lights emitted from a light source, the bandpass filter transmitting the light having the predetermined wavelength, the measurement apparatus measuring an absolute intensity of an incident light includes the steps of measuring an output of the measurement apparatus continuously, stopping or starting an emission of the light source in the measuring step, calculating a first extreme value t&#x2192;t&#x2212;0 and a second extreme value t&#x2192;t+0 in the output of the measurement apparatus at time twhere t is time in the measuring step, and tis time when the emission of the light source stops; and calculating a difference between the first extreme value t&#x2192;t&#x2212;0 and the second extreme value t&#x2192;t+0.

Measuring method, exposure apparatus, and device manufacturing method

Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device. In another preferred from, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, a gas filter disposed in a portion of a light path of the EUV light and being filled with a predetermined gas, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of the reception of EUV light by the light receiving device.

Apparatus for evaluating EUV light source, and evaluation method using the same

An alignment apparatus for aligning with each other a mask stage that supports a mask that has an exposure pattern and a wafer stage that supports an object by using a light with wavelength of 1 nm to 50 nm, said alignment apparatus including a substrate for forming a first reference pattern similar to a second reference pattern formed on the mask or the mask stage, and a detection part for detecting a light from the substrate, wherein said substrate and detection part form a hollow housing, in which a gas is filled.

Alignment apparatus, exposure apparatus and device fabrication method

In order to prevent a region of supercooling from increasing and to effect uniform crystal growth, the generation of latent heat is detected from changes in temperature of a crucible or a heater or from changes in heat flow rate and also the position of solid-liquid interface is mathematically found, to control the crucible-descending rate or temperature distribution so that the crystal growth rate can be kept at a predetermined value.

Apparatus and process for producing crystal article, and thermocouple used therein

A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.

Device manufacturing method

An exposure method for exposing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.

Exposure method

A proximity X-ray exposure apparatus for irradiating a reticle with X-rays generated from an X-ray source and irradiating a substrate with X-rays that have passed through the reticle. The apparatus includes a plasma X-ray source for generating X-rays by producing plasma, and a control device for controlling X-ray intensity distribution by controlling production of the plasma so that the plasma is produced at a plurality of positions in one irradiating operation of the substrate with the X-rays. The control device controls the X-ray intensity distribution in order to control the plurality of positions so that a required amount of defocusing, which is a size of a projection image corresponding to one point on the reticle formed by irradiating the reticle with X-rays generated at the plurality of positions, can be obtained.

X-ray exposure apparatus

An apparatus and method for detecting an alignment mark on a substrate using electron beams. The method include the steps of setting an accelerating voltage of the electron beams in accordance with the layer structure of the substrate, irradiating the substrate with the electron beams having the accelerating voltage set in the setting step, and detecting one of radiation and electrons from the substrate after the irradiating step is performed, and determining the position of the alignment mark based on the detecting operation. The apparatus includes a device for setting such an accelerating voltage, a device for irradiating the substrate with the electron beams, and a detector for detecting one of the radiation and the electrons. In one embodiment, fluorescent X-rays are detected, while in another embodiment secondary electrons or backscattered electrons are detected.

Alignment mark detection method, and alignment method, exposure method and device, and device production method, making use of the alignment mark detection method

A mask manufacturing method includes performing a multiple exposure process to a substrate so that a number of latent images are formed on the substrate, and processing the exposed substrate to produce actual mask patterns, wherein the multiple exposure process includes a first exposure step for forming a latent image of relatively-fine periodic patterns on the substrate by use of a first master mask having absorptive periodic patterns, and a second exposure step for forming a latent image of relatively-rough patterns on the substrate by use of a second master mask having absorptive patterns.

Growing community of inventors

Saitama, Japan

Mitsuaki Amemiya